Abstract: There are provided system and method of classifying defects in a specimen. The method includes: obtaining one or more defect clusters detected on a defect map of the specimen, each cluster characterized by a set of cluster attributes comprising spatial attributes including spatial density indicative of density of defects in one or more regions accommodating the cluster, each given defect cluster being detected at least based on the spatial density thereof meeting a criterion; for each cluster, applying a cluster classifier to a respective set of cluster attributes thereof to associate the cluster with one or more labels of a predefined set of labels, wherein the cluster classifier is trained using cluster training data; and identifying DOI in each cluster by performing a defect filtration for each cluster using one or more filtering parameters specified in accordance with the label of the cluster.

Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

Abstract: A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.

Abstract: A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.

Abstract: A method for process analysis includes acquiring first inspection data, using a first inspection modality, with respect to a substrate having multiple instances of a predefined pattern of features formed thereon using different, respective sets of process parameters. Characteristics of defects identified in the first inspection data are processed so as to select a first set of defect locations in which the first inspection data are indicative of an influence of the process parameters on the defects. Second inspection data are acquired, using a second inspection modality having a finer resolution than the first inspection modality, of the substrate at the locations in the first set. The defects appearing in the second inspection data are analyzed so as to select, from within the first set of the locations, a second set of the locations in which the second inspection data are indicative of an optimal range of the process parameters.

Abstract: A computer program product and a method for dissipation of an electrical charge stored in a region of an object. The method may include (a) sensing, by at least one sensor, an electrical charging status of the region of the object, while the object is located within a vacuum chamber and while a gaseous pressure within the vacuum chamber is below a certain vacuum pressure threshold; and (b) performing, based on the charging status of the given region, an electrical charge dissipation process that comprises increasing the gaseous pressure within the vacuum chamber to be within a given gaseous pressure range that facilitates a dissipation, by breakdown, of the electrical charge stored in the region of the object to the vacuum chamber.

Abstract: A method for evaluating a specimen, the method can include positioning an energy dispersive X-ray (EDX) detector at a first position; scanning a flat surface of the specimen by a charged particle beam that exits from a charged particle beam optics tip and propagates through an aperture of an EDX detector tip; detecting, by the EDX detector, x-ray photons emitted from the flat surface as a result of the scanning of the flat surface with the charged particle beam; after a completion of the scanning of the flat surface, positioning the EDX detector at a second position in which a distance between the EDX detector tip and a plane of the flat surface exceeds a distance between the plane of the flat surface and the charged particle beam optics tip; and wherein a projection of the EDX detector on the plane of the flat surface virtually falls on the flat surface when the EDX detector is positioned at the first position and when the EDX detector is positioned at the second position.

Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.

Abstract: Data indicative of alignment targets may be received. Each alignment target may be associated with a target location on an object. Locations of the object to be inspected may be identified. An alignment target from the alignment targets may be selected. Each of the locations may be within a determined distance from the selected alignment target. An indication may be provided to align the object relative to an examination tool for inspecting the locations within the determined distance from the selected alignment target.

Abstract: A height of a pattern on a semiconductor wafer is determined by comparing a measured image of the pattern with a predicted image of the pattern, as produced by a shadow model. An estimated height of the pattern is provided as an input to the shadow model. The shadow model produces occluding contours that are used to generate predicted images. A set of predicted images are generated, each predicted image being associated with an estimated height. The estimated height corresponding to the predicted image most closely matching with the measured image is used as the height calculated by the shadow model.

Abstract: An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.

Abstract: A candidate defect may be identified at a semiconductor wafer. A determination may be made as to whether the candidate defect at the semiconductor wafer corresponds to a systematic defect or a random defect. In response to determining that the candidate defect at the semiconductor wafer corresponds to a systematic detect, the candidate defect at the semiconductor wafer may be provided to a defect review tool for review by the defect review tool.

Abstract: One or more metrology objects and one or more metrology operations may be identified. A design-based representation of a first metrology object of the one or more metrology objects may be received. Furthermore, an image-based representation of the first metrology object of the one or more metrology objects may be received where the one or more metrology operations include a first metrology operation associated with the first metrology object that is to be performed on the image-based representation of the first metrology object. The design-based representation of the first metrology object may be mapped with the image-based representation of the first metrology object. The first metrology operation may be performed based on the mapping.

Abstract: A method for evaluating a region of an object, the method may include repeating, for each sub-region out of a first sub-region of the region till a penultimate sub-region of the region, the steps of: (a) acquiring, by a charged particle imager, a charged particle image of the sub-region; and (b) milling, by a charged particle miller, the sub-region to expose another sub-region of region; acquiring, by the charged particle imager, a charged particle image of a last sub-region of the region; and generating three-dimensional information about a content of the region based on charge particle images of the first sub-region till last sub-region of the region.

Abstract: There are provided a method of generating an inspection recipe usable for inspecting an inspection area of a specimen and a recipe generating unit. The recipe generating unit is configured: upon obtaining design data informative of design structural elements comprised in a design PoI corresponding to the at least one PoI, to provide global segmentation of a test image captured by an inspection tool unit from the inspection area and comprising at least one test PoI of substantially the same design as the at least one PoI, thereby to obtain segmented structural elements comprised in the test PoI and segmentation configuration data; to associate the segmented structural elements comprised in the test PoI with the design structural elements comprised in the design PoI, thereby to obtain design association data; and to generate an inspection recipe comprising, at least, segmentation configuration data and design association data.

Abstract: A computerized method for estimating a size of a nanometric part of an inspected article, the method including: (a) acquiring inspection results generated by processing an inspection image which was generated by collecting signals arriving from a portion of the article which includes the part by an inspection system; (b) fitting to the inspection results an approximation function from a group of functions which is related to a response pattern of the inspection system; and (c) determining an estimated size of the part, based on at least one parameter of the approximation function.

Abstract: A charged particle beam system comprises a particle beam source having a particle emitter at a first voltage, a first electrode downstream of the particle beam source at a second voltage, a multi-aperture plate downstream of the first electrode, a second electrode downstream of the multi-aperture plate at a third voltage, a third electrode downstream of the second electrode at a fourth voltage, a deflector downstream of the third electrode, an objective lens downstream of the deflector, a fourth electrode downstream of the deflector at a fifth voltage; and an object mount at a sixth voltage. Voltage differences between the first, second, third, fourth and fifth voltages have same and opposite signs.

Abstract: A method and a charged particle beam system that includes charged particle beam optics and a movable stage; wherein the movable stage is configured to introduce a movement between the object and charged particle beam optics; wherein the movement is of a constant velocity and along a first direction; wherein the charged particle beam optics is configured to scan, by the charged particle beam, multiple areas of the object so that each point of the multiple areas is scanned multiple times; wherein the multiple areas partially overlap; wherein the scanning is executed by the charged particle beam optics; wherein the scanning comprises performing counter-movement deflections of the charged particle beam for at least partially compensating for the movement; and wherein each area of the multiple areas is scanned by following an area scan scheme that defines multiple scan lines that differ from each other.

Abstract: A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.

Abstract: A system, computer program product and a method for measuring a hole. The method may include charging a vicinity of the hole having a nanometric width; obtaining, multiple electron images of the hole; wherein each electron image is formed by sensing electrons of an electron energy that exceeds an electron energy threshold that is associated with the electron image; wherein electron energy thresholds associated with different electron images of the multiple electron images differ from each other; receiving or generating a mapping between height values and the electron energy thresholds; processing the multiple electron images to provide hole measurements; and generating three dimensional measurements of the hole based on the mapping and the hole measurements.