Abstract: Systems and methods for optical inspection of a sample are provided. Radiation scattered from the sample includes a first portion having a first polarization state and a second portion having a second polarization state that is a mirror image of the first polarization state. The first polarization state of the first portion of the scattered radiation is transposed using a polarizing mirroring device so that the scattered radiation output from the polarizing mirroring device has substantially the second polarization state.

Abstract: Provided herein are approaches for controlling radicals in proximity to a wafer. In some embodiments, a system may include a radical source operable to generate radicals in proximity to the wafer, and a filter positioned between the radical source and the wafer, wherein the filter includes a first plate operable to control radicals generated by the radical source. The system may further include an ion source operable to deliver an ion beam to the wafer, wherein the ion beam passes outside the filter.

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

Abstract: Gas delivery systems and methods of delivering a process gas are described. The gas delivery system includes an inert gas line and a first reactive gas line connected to a gas line with a purge gas flow. The flows of inert gas and first reactive gas are controlled so that the pressure at the end of the gas line remains substantially constant.

Abstract: Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Abstract: A method and apparatus for replacing process kits that include edge rings and/or support rings in processing chambers. In one implementation, a process kit comprises a multi-segment edge ring. The multi-segment edge ring comprises a first segment, a second segment, and a first annular body. The first annular body comprises a first upper surface, a first lower surface opposite the first upper surface, a first inner surface and a first outer surface. The first segment and the second segment are connectable to form the first annular body. The first lower surface is operable to be positioned over a substrate support disposed within a processing chamber, and at least a portion of the inner surface, which is positioned between the first upper surface and the first lower surface has a diameter greater than a diameter of a substrate to be processed in the processing chamber.

Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

Abstract: A method, and a high voltage (HV) system that may include a noise reduction unit (MNRU) and a bias setting unit (BSU). The HV system may receive a HV supply signal, over a high voltage supply line from a HV supply unit. The HV supply unit, the MNRU, the BSU and a HV charged particle system may share a ground. At least the MNRU may detect noise in the HV supply signal and send, though the ground, a noise compensation signal. The BSU may receive an indication about a requested value of a bias voltage, and apply the bias voltage to a noise compensated HV signal to provide a biased and noise compensated HV signal to the HV charged particle system.

Abstract: Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.

Abstract: Embodiments presented herein provide techniques for planning and scheduling a semiconductor back end factory. The technique begins by running a first mathematical programing model applied to factory data and production targets that produces a solution and processing the solution to produce a bottleneck loading plan for at least one machine of the factory's bottleneck machine families. The technique further includes running a second mathematical programing model applied to the bottleneck loading plan that produces a solution and processing the solution to produce a conversion schedule for the at least one machine of the bottleneck machine families. The technique further includes creating a lot schedule for the factory by running a simulation that follows the conversion schedule. The technique further includes publishing the lot schedule.

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

Abstract: A layer thickness measurement system includes a support to hold a substrate, an optical sensor to capture a color image of at least a portion of the substrate, and a controller. The controller is configured to receive the color image from the optical sensor, store a function that provides a value representative of a thickness as a function of position along a predetermined path in a coordinate space of at least two dimensions including a first color channel and a second color channel, for a pixel of the color image determine a coordinate of the pixel in the coordinate space from color data in the color image, determine a position of a point on the predetermined path that is closest to the coordinate, and calculate a value representative of a thickness from the function and the position of the point on the predetermined path.

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

Abstract: A method, non-transitory computer readable medium and a computerized system for testing a code using real time analysis. The method can include (i) executing a group of test cases while performing real time analysis to find a set of overlapping code segments (OCSs), input values that are fed, during the executing of the group, to each one of the set of OCSs, and output values that are outputted from each one of the OCSs during the execution of the group, (ii) generating, for at least some of the OCSs, at least one OCS test for testing each of the at least some OCSs, wherein the generating is based, at least in part, on the input values and the output values, (iii) determining an evaluation process of the code that includes executing one or more OCS tests for testing one or more OCSs, (iv) evaluating the code by executing the evaluation process.

Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

Abstract: Embodiments of the present disclosure generally relate an interconnect structure formed on a substrate and a method of forming the interconnect structure thereon. In one embodiment, a method of forming an interconnect structure includes forming an opening comprising a via and a trench in an insulating structure formed on a substrate, forming a first passivation layer in the opening, removing a portion of the first passivation layer from the opening, and selectively depositing a first metal containing material in the via.

Abstract: A method of fabricating a multi-color display includes dispensing a photo-curable fluid that includes a color conversion agent over a display having a backplane and an array of light emitting diodes electrically integrated with backplane circuitry of the backplane, activating a plurality of light emitting diodes in the array of light emitting diodes to illuminate and cure the first photo-curable fluid to form a color conversion layer over each of the first plurality of light emitting diodes to convert light from the plurality of light emitting diodes to light of a first color, and removing an uncured remainder of the first photo-curable fluid. This process is repeated with a fluid having different color conversion components for another color.