Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for hybrid (or called integrated) spin-orbit-torque magnetic spin-transfer-torque magnetic random access memory (SOT-STT MRAM) applications. In one embodiment, the method includes one or more magnetic tunnel junction structures disposed on a substrate, the magnetic tunnel junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a spin orbit torque (SOT) layer disposed on the magnetic tunnel junction structure, and a back end structure disposed on the spin orbit torque (SOT) layer.

Abstract: Apparatuses and methods for in-situ temperature measurement of a process chamber are described herein. A process chamber includes an infrared (IR) sensor mounted to the chamber wall. The IR sensor is mounted such that it can be oriented to receive an IR wave from targets within the process chamber through a view port in the chamber wall to detect a temperature of a surface inside the chamber, or to receive an IR wave from a target outside of the process chamber to detect an atmospheric temperature or a temperature of an exterior surface of the process chamber. As the orientation of the IR sensor is controllable to receive the IR wave from selected directions, it may be used to detect the temperature of various targets inside and outside the process chamber. The obtained temperature information is useful to improve overall chamber matching, processing throughput, and uniformity.

Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

Abstract: A method and apparatus for locating the center of a substrate are provided. The substrate-positioning system uses an array of visible light sources to illuminate the substrate and its edges. The light sources are non-laser in nature and typically emit in the visible spectrum. The light sources are typically LEDs so that the individual elements may be switched-on or switched-off extremely rapidly, which allows for multiple images to be taken using different light sources at any given substrate rotation position. The substrate-positioning system further includes an image sensor array with the ability to process data rapidly, which allows for the digitization (quantization) of each pixel being viewed. Algorithms analyze the values for patterns and determine the true edge position at each rotational angle of the substrate. The systems and methods described herein are able to locate the center of various types of substrates composed of different materials and/or edge types.

Abstract: An additive manufacturing system includes a platform, a dispenser to dispense a plurality of layers of feed material on a top surface of the platform, a light source to generate a first light beam and a second light beam, a polygon mirror scanner, a galvo mirror scanner positioned adjacent to the polygon mirror scanner, and a controller. The controller is coupled to the light source, the polygon mirror scanner and the galvo mirror scanner, and the controller is configured to cause the light source and polygon mirror scanner to apply the first light beam to a region of the layer of feed material, and to cause the light source and galvo mirror scanner to apply the second light beam to at least a portion of the region of the layer of feed material.

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.

Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of an aluminum-containing material. The contacting may produce an aluminum halide material. The methods may include flowing an etchant precursor into the substrate processing region. The methods may include contacting the aluminum halide material with the etchant precursor. The methods may include removing the aluminum halide material.

Abstract: The present disclosure relates to methods and apparatus for structuring a semiconductor substrate. In one embodiment, a method of substrate structuring includes applying a resist layer to a substrate optionally disposed on a carrier. The resist layer is patterned using ultraviolet radiation or laser ablation. The patterned portions of the resist layer are then transferred onto the substrate by micro-blasting to form desired features in the substrate while unexposed or un-ablated portions of the resist layer shield the rest of the substrate. The substrate is then exposed to an etch process and a de-bonding process to remove the resist layer and release the carrier.

Abstract: Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.

Abstract: Electronic device manufacturing systems may include an equipment front end module (EFEM) having a load port assembly configured to receiving a substrate carrier, which may be a front opening unified pod (FOUP). The load port assembly may have a receiving plate upon which the substrate carrier may be received. The receiving plate may have a plurality of gas nozzles that can be coupled to purge ports in a bottom of the substrate carrier and to a purge apparatus of the load port assembly. The purge apparatus is configured to provide a gas to the substrate carrier at a selectable gas flow rate and, in some embodiments, to provide a gas to different portions of the substrate carrier each at a selectable gas flow rate. Methods of providing selectable gas flow rates for purging a substrate carrier coupled to a load port assembly are also provided, as are other aspects.

Abstract: Implementations of the present disclosure provide methods for processing substrates in a processing chamber. In one implementation, the method includes (a) depositing a dielectric layer on a first substrate at a first chamber pressure using a first high-frequency RF power, (b) depositing sequentially a dielectric layer on N substrates subsequent to the first substrate at a second chamber pressure, wherein N is an integral number of 5 to 10, and wherein depositing each substrate of N substrates comprises using a second high-frequency RF power that has a power density of about 0.21 W/cm2 to about 0.35 W/cm2 lower than that of the first high-frequency RF power, (c) performing a chamber cleaning process without the presence of a substrate, and (d) repeating (a) to (c).

Abstract: Data indicative of a desired shape of the polishing pad to be fabricated by droplet ejection by the additive manufacturing system is received. The data includes a desired shape defining a desired profile including a polishing surface having one or more partitions separated by one or more grooves on the polishing pad. Data indicative of distortions from the desired profile caused by dispensing of layers by droplet ejection by the additive manufacturing system is generated. Data indicative of an initial layer to dispense by droplet ejection is generated to at least partially compensate for the distortions from the desired profile. The initial layer is dispensed on a support by droplet ejection. Overlying layers are dispensed on the initial layer by droplet ejection by the additive manufacturing system to form the polishing pad.

Abstract: Embodiments disclosed herein describe a liner assembly including a plurality of individually separated gas passages. The liner assembly provides control of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to the present embodiments.

Abstract: Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

Abstract: A method for forming a conformal hermetic silicon nitride film. The method includes using thermal chemical vapor deposition with a polysilane gas to produce an ultra-conformal amorphous silicon film on a substrate, then treating the film with ammonia or nitrogen plasmas to convert the amorphous silicon film to a conformal hermetic silicon nitride. In some embodiments, the amorphous silicon deposition and the plasma treatment are performed in the same processing chamber. In some embodiments, the amorphous silicon deposition and the plasma treatment are repeated until a desired silicon nitride film thickness is reached.