Abstract: The present invention relates to a method of diffusion bonding of steel and steel alloys, to fabricate a fluid delivery system of the kind which would be useful in semiconductor processing and in other applications which require high purity fluid handling.

Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

Abstract: The present invention provides, according to a first aspect, a method for the examination of specimen with a beam of charged particles. The method provides one or more images of the specimen made with different view angles, so that, compared to a single image of the specimen, a lot of additional information about the specimen can be accessed. The different view angles (angles of incidence) are achieved by tilting the beam between the two images and moving the specimen to a new position so that the displacement of the beam caused by the tilting of the beam is compensated. Accordingly, while displaying/recording the second image the beam scans over the same area as it has scanned while displaying/recording the first image.

Abstract: A method and apparatus for processing substrates using a cluster tool that has an increased system throughput, increased system reliability, improved device yield performance, and a reduced footprint. The various embodiments of the cluster tool may utilize two or more robot assemblies that are configured in a parallel processing configuration and adapted to move in a vertical and a horizontal direction to transfer substrates between the various processing chambers retained in the processing racks so that a desired processing sequence can be performed on the substrates. Generally, the various embodiments described herein are advantageous since each row or group of substrate processing chambers are serviced by two or more robots to allow for increased throughput and increased system reliability. Also, the various embodiments described herein are generally configured to minimize and control the particles generated by the substrate transferring mechanisms.

Abstract: Embodiments of the invention contemplate the formation of a low cost flexible solar cell using a novel electroplating method and apparatus to form a metal contact structure. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. Solar cell substrates that may benefit from the invention include flexible substrates may have an active region that contains organic material, single crystal silicon, multi-crystalline silicon, polycrystalline silicon, germanium, and gallium arsenide, cadmium telluride, cadmium sulfide, copper indium gallium selenide, copper indium selenide, gallilium indium phosphide, as well as heterojunction cells that are used to convert sunlight to electrical power.

Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

Abstract: The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Abstract: Images of areas of a wafer are generated and registered with respect to computer aided design (CAD) data to provide a registered images. Defects in the wafer are then detected by comparing the registered images to one another and defect location information is generated in CAD coordinates.

Abstract: In a first aspect, a first apparatus is provided for inter-station overhead transport of a substrate carrier. The first apparatus includes (1) an overhead transport mechanism; (2) a substrate carrier support suspended from the overhead transport mechanism and adapted to receive and support a substrate carrier; and (3) a stabilization apparatus adapted to limit rocking of the substrate carrier and substrate carrier support relative to the overhead transport mechanism. Numerous other aspects are provided.

Abstract: An evaporator for applying vapor to a substrate at a coating rate is described. The evaporator includes an evaporator tube having a distribution pipe with at least one nozzle outlet, wherein the evaporator tube includes a pressure measurement device, the pressure measurement device comprising an optical diaphragm gauge.

Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.

Abstract: A datum plate is provided for use in installations of substrate handling systems. The datum plate has a set of predetermined attachment locations adapted to couple the datum plate to a chamber; a set of predetermined attachment locations adapted to couple one or more automatic door opener platforms to the datum plate; and a set of predetermined attachment locations adapted to couple one or more substrate handlers contained within the chamber, to the datum plate. The attachment locations are positioned such that when the datum plate is coupled to the chamber, and the automatic door opener platform and the substrate handler are coupled to the datum plate, the substrate handler and automatic door opener platform are aligned for substrate transfer therebetween. Numerous other aspects are provided.

Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

Abstract: A method and apparatus for inspecting the surface of articles, such as chips and wafers, for defects, includes a first phase of optically examining the complete surface of the article inspected at a relatively high speed and with a relatively low spatial resolution, and a second phase of optically examining with a relatively high spatial resolution only the suspected locations for the presence or absence of a defect therein.

Abstract: The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch rate, wafer current and possibly other plasma parameters. The chamber parameters may be selected from a group including source power, bias power, chamber pressure, magnet coil current of different coils, gas flow rate in different gas injection zones, gas species composition in different gas injection zones, and possibly other chamber parameters. The method begins with a first step carried out for each one of the selected plasma parameters.

Abstract: A laser beam is modulated at a very high frequency to produce uniform radiant flux densities on substrate surface processing regions during thermal processing. Beam modulation is achieved by passing the laser beam through a plasma which causes phase randomization within the laser beam. This method may be used for any application where intense, uniform illumination is desired, such as pulsed laser annealing, ablating, and wafer stepper illuminating.

Abstract: We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of the metal seed layer on the wafer via plasma deposition at a sufficient ratio of wafer substrate bias to DC source power that bottom coverage is achieved while resputtering of surfaces of the recessed device features is inhibited. The method also comprises depositing a second portion of the metal seed layer at a ration of substrate RF bias to DC source power such that resputtering is not inhibited.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: Methods for reducing contact resistance in semiconductor devices are provided in the present invention. In one embodiment, the method includes providing a substrate having semiconductor device formed thereon, wherein the device has source and drain regions and a gate structure formed therein, performing a silicidation process on the substrate by a thermal annealing process, and performing a laser anneal process on the substrate. In another embodiment, the method includes providing a substrate having implanted dopants, performing a silicidation process on the substrate by a thermal annealing process, and activating the dopants by a laser anneal process.