Patents Assigned to Applied Material
  • Dual Top Gas Feed Through Distributor for High Density Plasma Chamber
    Publication number: 20090042407
    Abstract: A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.
    Type: Application
    Filed: October 17, 2008
    Publication date: February 12, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Won B. Bang, Srivivas D. Nemani, Phong Pham, Ellie Y. Yieh
  • Silicon nitride film with stress control
    Patent number: 7488690
    Abstract: An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: February 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Andrew M. Lam, Yuji Maeda, Thomas Mele, Jacob W. Smith, Sean M. Seutter, Sanjeev Tandon, Randhir P. Singh Thakur, Sunderraj Thirupapuliyur
  • CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN
    Publication number: 20090031953
    Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
    Type: Application
    Filed: October 10, 2008
    Publication date: February 5, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Nitin K. Ingle, Zheng Yuan, Paul Gee, Kedar Sapre
  • Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
    Publication number: 20090034147
    Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.
    Type: Application
    Filed: July 31, 2007
    Publication date: February 5, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Kadthala Ramaya Narendrnath, Xinglong Chen, Sudhir Gondhalekar, Dmitry Lubomirsky, Muhammad Rasheed, Tony Kaushal
  • HIGH RESOLUTION SUBSTRATE HOLDER LEVELING DEVICE AND METHOD
    Publication number: 20090031957
    Abstract: A method for adjusting a spacing of a leveling plate from a chamber body comprises attaching a mounting stud that includes a stud threaded surface to the chamber body. An adjustment screw is provided that has a first threaded surface threadingly engaged with the stud threaded surface. A bushing is provided that has a bushing threaded surface threadingly engaged with a second threaded surface of the adjustment screw. The bushing is movably coupled to the leveling plate. Coarse adjustment of the spacing between the leveling plate and the chamber body is made by rotating the adjustment screw with respect to the mounting stud. The bushing is fixed to the leveling plate. Fine adjustment of the spacing between the leveling plate and the chamber body is made by rotating the adjustment screw with respect to the mounting stud and the bushing.
    Type: Application
    Filed: October 15, 2008
    Publication date: February 5, 2009
    Applicant: Applies Materials, Inc.
    Inventor: Kirby Floyd
  • Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
    Publication number: 20090034149
    Abstract: A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.
    Type: Application
    Filed: July 31, 2007
    Publication date: February 5, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Xinglong Chen, Sudhir Gondhalekar, Kadthala Ramaya Narendrnath, Muhammad Rasheed, Tony Kaushal
  • POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2
    Publication number: 20090035918
    Abstract: Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.
    Type: Application
    Filed: October 15, 2008
    Publication date: February 5, 2009
    Applicant: Applies Materials, Inc.
    Inventors: Xiaolin Chen, Srinivas D. Nemani, DongQing Li, Jeffrey C. Munro, Marlon E. Menezes
  • Method of making an electrostatic chuck with reduced plasma penetration and arcing
    Publication number: 20090034148
    Abstract: A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum.
    Type: Application
    Filed: July 31, 2007
    Publication date: February 5, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Xinglong Chen, Sudhir Gondhalekar, Kadthala Ramaya Narendrnath, Muhammad Rasheed, Tony Kaushal
  • Forming metal silicide on silicon-containing features of a substrate
    Patent number: 7485556
    Abstract: A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: February 3, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Jeong Soo Byun, Jianxin Lei, Lisa Yang, Hien-Minh Huu Le
  • Suspended gas distribution manifold for plasma chamber
    Patent number: 7484473
    Abstract: A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate stress in the gas distribution plate due to thermal expansion and contraction. In another aspect, the side wall provides thermal isolation between the gas distribution plate and other components of the chamber.
    Type: Grant
    Filed: June 15, 2004
    Date of Patent: February 3, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ernst Keller, Quanyuan Shang
  • Local bias map using line width measurements
    Patent number: 7486814
    Abstract: A method and apparatus for inspecting a reticle measures line widths using an inspection tool that images the reticle and compares the image with a design database to detect errors in real time. The differences between the line widths of patterns on the reticle and the design database are stored during the inspection procedure. The difference (or “bias”) information is then processed off-line to create a map of all the local line-width deviation values (i.e., bias) of every feature on the reticle. The resultant local bias map can be used as a feedback mechanism to improve the reticle manufacturing process, as a “go/no go” criteria for the validity of the reticle, and as a standard report shipped together with the mask to the wafer fabrication facility, where it can be used as a yield-enhancing tool.
    Type: Grant
    Filed: April 10, 2006
    Date of Patent: February 3, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Yair Eran, Gad Greenberg, Ami Sade, Shirley Hemar
  • HIGH PROFILE MINIMUM CONTACT PROCESS KIT FOR HDP-CVD APPLICATION
    Publication number: 20090025636
    Abstract: A process kit cover for chemical vapor deposition processes is disclosed according to one embodiment of the invention. The process kit cover may include a protrusion from the top surface of the process kit cover. The protrusion is adjacent to a wafer facing surface. The protrusion decreases oxide buildup on the process kit cover and the wafer facing surface during repeated deposition processes. The process kit cover may also be in minimal thermal contact at the interface with a lower support structure, such as a ceramic collar or pedestal, according to another embodiment of the invention. Minimal thermal contact may be achieved by placing an insulator between the process kit cover and the lower support structure or by creating a gap or gaps between the process kit cover and the lower support structure. Ambient atmosphere may provide thermal insulating within the gap or gaps.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 29, 2009
    Applicant: Applied Materials, Inc.
    Inventor: MUHAMMAD RASHEED
  • Chamber stability monitoring using an integrated metrology tool
    Patent number: 7482178
    Abstract: A method and apparatus for monitoring the stability of a substrate processing chamber and for adjusting the process recipe. Thickness and CD measurement data are collected before wafer processing and after wafer processing by an integrated or an in-situ metrology tool to monitor process chamber stability and to adjust the process recipe. The real time chamber stability monitoring enabled by the integrated metrology tool reduces the risk and cost of wafer mis-processing. The real time process recipe adjustment allows tightening of the process recipe. Process development cycle can also be reduced by the method and apparatus.
    Type: Grant
    Filed: August 6, 2003
    Date of Patent: January 27, 2009
    Assignee: Applied Materials, Inc.
    Inventors: David S. L. Mui, Wei Liu, Hiroki Sasano
  • Apparatus for multiple beam deflection and intensity stabilization
    Patent number: 7483196
    Abstract: A multiple beam generator for use in a scanning system, wherein the generator includes an acousto-optic deflector (AOD) which during use receives a laser beam and generates a deflected beam, the deflection of which is determined by an AOD control signal; a diffractive element which generates an array of input beams from the deflected beam; and a control circuit which during operation generates the AOD control signal and varies a characteristic of the first control signal to account for errors in the scanning system.
    Type: Grant
    Filed: October 30, 2003
    Date of Patent: January 27, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Paul C. Allen, Alan J. Wickstrom, Bryan C. Bolt
  • SPUTTER COATING DEVICE AND METHOD OF DEPOSITING A LAYER ON A SUBSTRATE
    Publication number: 20090020416
    Abstract: A sputter coating device comprises a vacuum coating chamber, substrates arranged within the coating chamber, a cylindrical hollow cathode including a rotatable target rotating around a central axis A, and a magnet assembly which is arranged within the hollow cathode such that confining plasma zones are generated in an area above the surface of the target. At least one substrate is to be coated. The substrate has an OLED layer deposited on the substrate surface. An intermediate area is arranged between the surface of the target and a shield that shields particles sputtered from the surface of the target that move in a direction toward the shield. On each side of the shield, passages are provided between the intermediate area and coating area. Through the passage, only sputtered particles that have been scattered in the intermediate area may enter the coating area via the passage, and impinge the OLED layer.
    Type: Application
    Filed: June 25, 2008
    Publication date: January 22, 2009
    Applicant: Applied Materials, Inc.
    Inventors: James Scholhammer, Uwe Hoffmann, Jose Manuel Dieguez-Campo
  • METHOD FOR ETCHING USING ADVANCED PATTERNING FILM IN CAPACITIVE COUPLING HIGH FREQUENCY PLASMA DIELECTRIC ETCH CHAMBER
    Publication number: 20090023294
    Abstract: A method for etching wafers using advanced patterning film (APF) to reduce bowing and improve bottom-to-top ratios includes providing a wafer having an APF layer into a processing chamber, wherein the processing chamber is configured with a power source operating at about 162 MHz, supplying a process gas into the chamber, applying a source power using the 162 MHz power source, and applying a bias power to the wafer. The process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO). The ratio of H2:N2 is about 1:1. Additionally, the wafer temperature is adjusted to improve the etching characteristics.
    Type: Application
    Filed: July 16, 2007
    Publication date: January 22, 2009
    Applicant: Applied Materials, Inc.
    Inventors: JUDY WANG, Shing-Li Sung, Shawming Ma
  • Configuration for N consumers of electric energy, of which M consumers are simultaneously supplied with energy
    Patent number: 7479712
    Abstract: The invention relates to a configuration for several consumers of electric energy, with these consumers having either the same electric power or different electric powers. Since, as a rule, not all consumers need to be supplied simultaneously with electric energy, for example if, due to maintenance work, some are not in operation, a modular energy supply system is provided, which is comprised of several interconnectable modules. This makes it possible for each consumer to be supplied from small units with the power it requires.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: January 20, 2009
    Assignee: Applied Materials GmbH & Co. KG.
    Inventors: Holger Richert, Wolfgang Morbe
  • Low temperature aerosol deposition of a plasma resistive layer
    Patent number: 7479464
    Abstract: Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.
    Type: Grant
    Filed: October 23, 2006
    Date of Patent: January 20, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Elmira Ryabova, Senh Thach, Xi Zhu, Semyon L. Kats
  • Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
    Patent number: 7479304
    Abstract: Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 ?m to about 25 ?m. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: January 20, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Senh Thach, James Dempster, Li Xu, Thanh N. Pham
  • Detachable electrostatic chuck for supporting a substrate in a process chamber
    Patent number: 7480129
    Abstract: A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.
    Type: Grant
    Filed: September 7, 2005
    Date of Patent: January 20, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Karl Brown, Semyon Sherstinsky, Wei W. Wang, Cheng-Hsiung Tsai, Vineet Mehta, Allen Lau, Steve Sansoni