Abstract: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.

Abstract: A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

Abstract: A substrate coating system is provided which includes a substrate coating chamber; a gas box connected to the coating chamber and adapted to provide reagent gases to the coating chamber; and a reagent reclaim system connected to the substrate coating chamber and the gas box, wherein the reagent reclaim system includes a wet scrubber connected to the coating chamber; a polisher connected to the wet scrubber; and a dryer connected to the polisher and the gas box.

Abstract: The present invention concerns a method for the generation of a transparent conductive oxide coating (TCO layer), in particular a transparent conductive oxide coating as a transparent contact for thin section solar cells. The TCO layer consists at least of a first layer of high conductivity and a second layer of low conductivity, with the second layer generated by DC sputtering of at least one target, which contains zinc oxide and additionally aluminum, and the process atmosphere contains oxygen. Further, the present invention relates to a TCO layer as well as thin section solar cells on CIGS and CdTe basis.

Abstract: Methods and devices are provided for profiling a beam of light that includes a wavelength ?. The beam of light is received. Secondary light is generated at a wavelength ?? different from wavelength ? by fluorescing a material with the received beam of light. The secondary light is separated from the received beam of light. The separated secondary light is optically directed to a sensor.

Abstract: A shaped particle beam writing strategy can be used to write a pattern with a particle beam onto a substrate. The pattern comprises a circuit design that is fractured into a plurality of arbitrary polygons. The writing strategy comprises transforming and fracturing the arbitrary polygons into a plurality of restricted polygons, each restricted polygon being represented by a location coordinate, at least two dimension coordinates, and at least one external edge indicator. Thereafter, the restricted polygons are tiled into a set of tiles comprising interior tiles and external edge tiles. Flash data is assigned for each tile such that the interior tiles are assigned a first flash area and the external edge tiles are assigned a second flash area that is smaller than the first flash area. The flash data is arranged in a selected order to write the pattern with a modulated particle beam, such as an electron beam, on a substrate.

Abstract: A method for generating a charged particle beam flash. The method includes computing an array of dose correction multipliers, based, at least in part, on a resist sensitivity correction factor, and computing a displacement vector to account for placement effects, such as resist charging. The displacement vector is defined as {right arrow over (?)}c=dP{circle around (×)}{right arrow over (K)} , where {right arrow over (?)}c—represents the displacement vector, d represents the array of dose correction multipliers, P represents pattern exposure data, {circle around (×)} represents a mathematical convolution operation, and {right arrow over (K)} represents a Poisson kernel converted to a spatial domain. The method further includes using the displacement vector to modify position of the charged particle beam flash.

Abstract: In some aspects, a method is provided for enhancing electronic device manufacturing throughput within an electronic device manufacturing tool. The method includes the steps of (1) for the electronic device manufacturing tool, creating an electronic device manufacturing schedule based on process factors and mechanical factors associated with the manufacturing tool; and (2) employing the electronic device manufacturing schedule during electronic device manufacturing within the electronic device manufacturing tool. Numerous other aspects are provided.

Abstract: The present invention includes a method and apparatus for bonding a sputtering target to a backing plate. In one embodiment, a sputtering target is vacuum bonded to a backing plate using an elastomeric adhesive and a metal mesh. The vacuum pulls the backing plate and sputtering target together while also removing air pockets that inevitably form within the adhesive during adhesive deposition and backing plate attachment.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: The present invention relates to a method of determining physical properties of an optical layer or layer system by means of spectral transmission and/or reflection measurements, whereby in accordance with the spectrum of the transmission and/or reflection measurement, reference values for the wavelength-dependent refractive indices n0 and/or extinction coefficients k0 are chosen from known values or are determined experimentally and the variation that characterizes the layer is described by wavelength-independent variation constants Kn and Kk for the refractive indices and extinction coefficients.

Abstract: Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

Abstract: Methods, systems, and apparatus are provided that include determining a number of storage locations corresponding to busy chambers of an electronic device manufacturing tool; based on the number of storage locations corresponding to busy chambers, determining whether the electronic device manufacturing tool may accommodate a substrate; and of the electronic device manufacturing tool may accommodate a substrate, receiving a substrate in the electronic device manufacturing tool. Numerous other aspects are provided.

Abstract: Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

Abstract: In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a second vapor deposition process. The substrate may be exposed to a silicon-containing compound (e.g., silane) during the soak process. In some examples, a metallic nitride layer may be deposited subsequent to the soak process and prior to the second vapor deposition process. In other examples, the metal containing barrier layer contains metallic titanium, the metallic nitride layer contains titanium nitride, and the conductive material contains tungsten or copper. The plasma-enhanced cyclical vapor deposition process may further include exposing the substrate to a nitrogen precursor, such as nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, or derivatives thereof.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract: The invention relates to methods for positioning of a substrate and contacting of the test object for testing with a test apparatus with an optical axis and corresponding devices. Thereby, the substrate is put on the holder. The substrate is positioned relative to the optical axis. A contact unit is also positioned relative to the optical axis, whereby the contact unit is positioned independent of the positioning activity of the substrate. Thereby, a flexible contacting of test objects on the substrate can be realized.

Abstract: Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.

Abstract: The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material for the barrier layers, and etch stops, and ARCs. The dielectric layer can be deposited with different precursors as the SiC material, but preferably with the same or similar precursors as the SiC material. The present invention is particularly useful for ICs using high diffusion copper as a conductive material. The invention may also utilize a plasma containing a reducing agent, such as ammonia, to reduce any oxides that may occur, particularly on metal surfaces such as copper filled features.

Abstract: A method and apparatus for grounding a chamber isolation valve are provided. Generally, the method makes use of an electrically conductive elastomeric member or members to effectively ground a chamber isolation valve and/or isolation valve door while avoiding metal-to-metal contact between moving parts in the processing system. In one embodiment, the elastomeric member is attached to and in electrical communication with the door of the chamber isolation valve. The elastomeric member is brought into contact with a grounded component of the plasma processing system when the door is in the closed position. In another embodiment, the conductive elastomeric member is attached to a bracing member of the isolation valve and is brought into contact with a grounded component of the plasma processing system when the bracing member is deployed to hold the isolation valve door in place during substrate processing. Other configurations are also provided.