Patents Assigned to Applied Materials
  • Patent number: 11640917
    Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: May 2, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Michael R. Rice, Vijay D. Parkhe
  • Patent number: 11639547
    Abstract: Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.
    Type: Grant
    Filed: May 2, 2019
    Date of Patent: May 2, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Prerna Goradia, Jennifer Y. Sun, Xiaowei Wu, Geetika Bajaj, Atul Chaudhari, Ankur Kadam
  • Patent number: 11638979
    Abstract: A polishing pad for a semiconductor fabrication operation includes a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: May 2, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Uma Sridhar, Sivapackia Ganapathiappan, Ashwin Murugappan Chockalingam, Rajeev Bajaj, Daniel Redfield, Mayu Felicia Yamamura, Yingdong Luo, Nag B. Patibandla
  • Patent number: 11640987
    Abstract: Disclosed herein are methods for forming vertical field-effect-transistor (vFET). In some embodiments, a method includes providing a device structure including a plurality of pillars extending from a base layer, forming a capping layer over the device structure, and forming a drain in an upper section of each of the plurality of pillars by performing an angled implant to each of the plurality of pillars. The angled implant may be delivered at a non-zero angle of inclination relative to a perpendicular extending from a top surface of the base layer. The method may further include etching the device structure to remove the capping layer from along a lower section of each of the plurality of pillars, wherein the capping layer remains along the upper section of each of the plurality of pillars.
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: May 2, 2023
    Assignee: Applied Materials, Inc.
    Inventor: Andrew Michael Waite
  • Publication number: 20230132200
    Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.
    Type: Application
    Filed: October 21, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
  • Publication number: 20230130235
    Abstract: Exemplary slurry delivery systems may include a slurry source. The systems may include a slurry line coupled with the slurry source. The systems may include a slurry dispensing nozzle. The nozzle may include a lumen having an inlet that is fluidly coupled with a slurry outlet of the slurry line. The nozzle may include a body defining a reservoir and an exit port. The reservoir may be fluidly coupled with a downstream end of the lumen. The exit port may be coupled with the reservoir. The nozzle may include a valve seat. The nozzle may include a valve member having a first surface positioned against the valve seat when in a closed position. The valve member may be movable to an open position in which the first surface is spaced apart from the valve seat. The nozzle may include an actuator coupled with a second surface of the valve member.
    Type: Application
    Filed: October 21, 2021
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Chih Chung Chou, Anand Nilakantan Iyer, Ekaterina A. Mikhaylichenko, Christopher HeungGyun Lee, Shou-Sung Chang
  • Publication number: 20230127489
    Abstract: A reactor for coating particles includes a rotatable reactor assembly including a drum configured to hold a plurality of particles to be coated, an inlet tube, and an outlet tube, a stationary gas inlet line coupled to the inlet tube by a rotary inlet seal, a stationary gas outlet line coupled to the outlet tube by a rotary outlet seal, and a motor to rotate the rotatable reactor assembly.
    Type: Application
    Filed: October 21, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Brian Hayes Burrows, Sekar Krishnasamy, Ayyanagouda Raravi, Monika Mudalkar, Govindraj Desai, Hemantha Kumar Raju, Basavaraj Pattanshetty, David Masayuki Ishikawa, Visweswaren Sivaramakrishnan, Shrikant Swaminathan, Mario Cambron, Robert Navasca, Miaojun Wang, Jonathan Frankel
  • Publication number: 20230131809
    Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
    Type: Application
    Filed: December 23, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
  • Publication number: 20230129073
    Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: December 20, 2022
    Publication date: April 27, 2023
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20230126055
    Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.
    Type: Application
    Filed: October 21, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
  • Publication number: 20230125435
    Abstract: An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.
    Type: Application
    Filed: October 27, 2021
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Alan V. Hayes, Dmitry Lubomirsky
  • Publication number: 20230125883
    Abstract: An apparatus may include global control module, the global control module including a digital master clock generator and a master waveform generator. The apparatus may also include a plurality of resonator control modules, coupled to the global control module. A given resonator control module of the plurality of resonator control modules may include a synchronization module, having a first input coupled to receive a resonator output voltage pickup signal from a local resonator, a second input coupled to receive a digital master clock signal from the digital master clock generator, and a first output coupled to send a delay signal to the master waveform generator.
    Type: Application
    Filed: December 22, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventor: Keith E. Kowal
  • Publication number: 20230129550
    Abstract: Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may define one or more recessed features. The methods may include providing a second precursor to the processing region. The methods may include forming a plasma of the carbon-containing precursor and the second precursor in the processing region. Forming the plasma of the carbon-containing precursor and the second precursor may be performed at a plasma power of greater than or about 500 W. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more recessed features. The methods may include, subsequent depositing the carbon-containing material for a first period of time, applying a bias power while depositing the carbon-containing material for a second period of time.
    Type: Application
    Filed: October 22, 2021
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Abhijeet S. Bagal, Qian Fu
  • Publication number: 20230126780
    Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.
    Type: Application
    Filed: December 22, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Carl White, Mohith Verghese, David Marquardt, Jose Alexandro Romero
  • Patent number: 11638377
    Abstract: Electronic devices and methods of forming the electronic devices are described. The electronic devices comprise a plurality of memory holes extending along a first direction through a plurality of alternating oxide and nitride layers. Each memory hole has a core oxide surrounded by a semiconductor material, the semiconductor material surrounded by a dielectric. The memory holes are staggered to provide a plurality of memory hole lines having spaced memory holes so that adjacent memory hole lines have the memory holes in a staggered configuration. A conductive material is on top of the stack of alternating oxide and nitride layers. A dielectric filled cut line extends through the conductive material in a direction across the plurality of memory hole lines. The dielectric filled cut line separates a first memory hole line from an adjacent second memory hole line without disabling the functionality of the memory holes.
    Type: Grant
    Filed: September 13, 2020
    Date of Patent: April 25, 2023
    Assignee: Applied Materials, Inc.
    Inventor: Takehito Koshizawa
  • Patent number: 11637002
    Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: April 25, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Saravjeet Singh, Alan Tso, Jingchun Zhang, Zihui Li, Hanshen Zhang, Dmitry Lubomirsky
  • Patent number: 11635338
    Abstract: Methods and apparatus for detecting a vacuum leak within a processing chamber are described herein. More specifically, the methods and apparatus relate to the utilization of a spectral measurement device, such as a spectral gauge, to determine the leak rate within a process chamber while the process chamber is held at a leak test pressure. The spectral measurement device determines the rate of increase of one or more gases within the processing chamber and can be used to determine if the processing chamber passes or fails the leak test.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: April 25, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Martin A. Hilkene, Surendra Singh Srivastava
  • Patent number: 11636587
    Abstract: There is provided a system and method of inspecting a specimen. The method includes obtaining a first image of an inspection area of a die of a semiconductor specimen and a group of reference images corresponding to a group of candidate reference units, obtaining a second image informative of one or more partitions of the inspection area respectively associated with one or more inspection algorithms, for each given pixel of the first image, determining location of one or more reference pixels thereof based on information of the second image, selecting, from the group of candidate reference units, one or more specific reference units actually required for inspecting the inspection area based on the determined location, and using one or more reference images corresponding to the selected reference units to inspect the first image, thereby providing an inspection result of the inspection area.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: April 25, 2023
    Assignee: Applied Materials Israel Ltd.
    Inventors: Dan Koronel, Liat Shalom Mermelstein
  • Patent number: 11637029
    Abstract: A load port of a factory interface of an electronic device manufacturing system can include a purge apparats, a docking tray configured to receive a substrate carrier including a substrate carrier door and a substrate carrier housing, a backplane located adjacent to the docking tray, and a carrier door configured to seal an opening in the backplane when the carrier door opener is closed. The carrier door opener can include an inlet gas line therethrough that is coupled to one or more components of the purge apparatus. The load port can also include a controller that is configured to detect that the substrate carrier is placed in a docking position on the docking tray. The substrate carrier placed in the docking position on the docking tray can form a gap between the substrate carrier housing and the backplane.
    Type: Grant
    Filed: July 15, 2021
    Date of Patent: April 25, 2023
    Assignee: Applied Materials, Inc.
    Inventor: Paul B Reuter
  • Patent number: 11637004
    Abstract: An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: April 25, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Alexander N. Lerner, Michael P. Karazim, Andrew J. Constant, Jeffrey A. Brodine, Kim Ramkumar Vellore, Kevin Moraes, Roey Shaviv