Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface. The support assemblies may include a support stem coupled with the electrostatic chuck body. The support assemblies may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The support assemblies may include a ground electrode embedded within the electrostatic chuck body. The support assemblies may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.

Abstract: A method and a system for obtaining information from a sample. The system may include (i) a spatial filter that includes a blocking element and an aperture; (ii) an illumination unit; and (iii) an optical unit that includes an optical objective assembly. The illumination unit may be configured to illuminate the optical objective assembly with oblique radiation. The optical objective assembly may be configured to (a) focus the oblique radiation onto the sample, (b) collect radiation from the sample to provide collected radiation, and (c) reflect the oblique radiation to provide back reflected radiation. The optical unit may be configured to (a) focus the collected radiation to provide focused collected radiation, (b) direct the focused collection radiation towards the aperture, (c) focus the back reflected radiation to provide focused back reflected radiation, and (d) direct the focused back reflected radiation towards the blocking element.

Abstract: Electronic device processing systems including environmental control of the factory interface are described. One electronic device processing system has a factory interface having a factory interface chamber, a load lock apparatus coupled to the factory interface, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface and operational to monitor or control one of: relative humidity, temperature, an amount of oxygen, or an amount of inert gas within the factory interface chamber. In another aspect, purge of a carrier purge chamber within the factory interface chamber is provided. Methods for processing substrates are described, as are numerous other aspects.

Abstract: A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states, modelling an underlying signal using a plant state, and applying a linear prediction filter to the plant state and the plurality of disturbance states to generate a filtered signal representing the underlying signal.

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described.

Abstract: An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Abstract: There is provided a method of defect detection on a specimen and a system thereof. The method includes: obtaining a runtime image representative of at least a portion of the specimen; processing the runtime image using a supervised model to obtain a first output indicative of the estimated presence of first defects on the runtime image; processing the runtime image using an unsupervised model component to obtain a second output indicative of the estimated presence of second defects on the runtime image; and combining the first output and the second output using one or more optimized parameters to obtain a defect detection result of the specimen.

Abstract: Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Abstract: A method includes identifying a recipe for depositing a plurality of layers on a substrate in a processing chamber of a substrate processing system. The recipe includes iterations of a set of processes. Each iteration is for depositing at least one layer. The method further includes determining iteration adjustments to cause uniformity of the layers. Each iteration adjustment corresponds to a respective iteration. The method further includes determining multipliers to cause an adjustment in thickness of one or more layers of the layers. Each multiplier of the multipliers corresponds to a corresponding iteration. The method further includes storing the iteration adjustments and the multipliers as stored iteration adjustments and stored multipliers. The layers are deposited on substrates based on the recipe and the stored iteration adjustments and the stored multipliers.

Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

Abstract: Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium- and-nitrogen-containing region.

Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor and an inert precursor within a processing region of a semiconductor processing chamber. The methods may include, subsequent a first period of time, increasing a flow rate of the carbon-containing precursor and a flow rate of the inert precursor. The methods may include increasing a plasma power at which the plasma is formed. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber.

Abstract: Exemplary support assemblies may include a top puck characterized by a first surface and a second surface opposite the first surface. The top puck may define a recessed ledge at an outer edge of the first surface of the top puck. The assemblies may include a cooling plate coupled with the top puck adjacent the second surface of the top puck. The assemblies may include a back plate coupled with the top puck about an exterior of the top puck. The back plate may at least partially define a volume with the top puck. The cooling plate may be housed within the volume. The assemblies may include a heater disposed on the recessed ledge of the top puck. The assemblies may include an edge ring seated on the heater and extending about the top puck. The edge ring may be maintained free of contact with the top puck.

Abstract: A system may be configured to monitor an amount of a gas species in a processing chamber using Optical Emission Spectrometry. The gas measurement may be provided as feedback to a control process that generates a target setpoint for a gas flow controller into the process chamber. This real-time process may increase/decrease the flow rate of the gas in order to maintain a process deposition mode within a transition region between primarily metallic deposition and primarily compound deposition.

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

Abstract: A vacuum orientation module for a substrate processing system is described. The module includes at least a first vacuum orientation chamber, comprising: a vacuum chamber; a transportation track within the vacuum chamber, the transportation track having a support structure and a driving structure and defining a transportation direction; and an orientation actuator to change the substrate orientation between a non-vertical orientation and a non-horizontal orientation, the vacuum chamber has two slit openings, particularly two essentially vertically slit openings, at opposing side walls of the vacuum chamber in the transportation direction.