Patents Assigned to Applied Materials
-
Patent number: 10963990Abstract: Methods, systems, and non-transitory computer readable medium are described for automated image measurement for process development and optimization. A method includes receiving original images including a first original image. Each original image is of a corresponding product associated with a manufacturing process. The method further includes performing, based on process information about the manufacturing process, feature extraction to identify features of the first original image that are expected to change based on manufacturing parameters of the manufacturing process. The method further includes generating a first synthetic image of synthetic images by performing targeted deformation of one or more of the features of the first original image.Type: GrantFiled: January 28, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Abhinav Kumar, Benjamin Schwarz, Charles Hardy
-
Patent number: 10964512Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.Type: GrantFiled: March 30, 2018Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky
-
Patent number: 10963753Abstract: Methods, systems, and non-transitory computer readable medium are described for automated image measurement for process development and optimization. A method includes receiving an image of a product associated with a manufacturing process; determining, using a trained machine learning model, an image classification for the image; selecting, based on the image classification, one or more image processing algorithms for the image; pre-processing the image based on at least one of the one or more image processing algorithms to generate an enhanced image; measuring, using a first image processing algorithm of the one or more image processing algorithms, one or more attributes of the enhanced image to determine image measurements; and reporting the image measurements. The manufacturing parameters of the manufacturing process are to be updated based on the image measurements.Type: GrantFiled: January 28, 2019Date of Patent: March 30, 2021Assignee: Applied Materials, Inc.Inventors: Abhinav Kumar, Benjamin Schwarz, Charles Hardy
-
Publication number: 20210086239Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
-
Publication number: 20210087689Abstract: Process chambers and methods for leveling a motor shaft and substrate support plane are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A first plurality of sensors is arranged at about the same radial distance from the rotational axis and at different angular positions relative to the rotational axis and a second plurality of sensors are arranged to measure the support plane. An angle-dependent motor leveling profile is determined and shim values for the motor bolts are determined to level the motor shaft. The support plane is measured using the second plurality of sensors to level the support plane perpendicular to the motor shaft.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Ashutosh Agarwal, Tejas Ulavi, Sanjeev Baluja
-
Publication number: 20210087686Abstract: Process chamber lids having a pumping liner with a showerhead and gas funnel within an open central region are described. The showerhead is spaced a distance from the gas funnel to form a gap and the gas funnel has an opening to provide a flow of gas into the gap. The gas funnel includes a plurality of apertures extending from the front surface to a common region adjacent the back surface of the gas funnel. A purge ring is in contact with the back surface of the gas funnel and aligned so that a circular channel formed in the bottom surface of the purge ring body is positioned adjacent the common area of the apertures in the gas funnel.Type: ApplicationFiled: September 22, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Mario D. Sanchez, Anqing Cui
-
Publication number: 20210087688Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Joseph AuBuchon, Kevin Griffin, Hanhong Chen
-
Publication number: 20210090877Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Hanhong Chen, Philip A. Kraus, Joseph AuBuchon
-
Publication number: 20210092800Abstract: Heaters having a body with having a top and bottom comprising pyrolytic boron nitride (PBN), a first heater electrode and a second heater electrode are described. The heater electrodes can be enclosed within an electrically insulating standoff and connected to separate busbars to provide power. Heater assemblies including one or more of the heaters and processing chambers including the heater assemblies are also described.Type: ApplicationFiled: February 20, 2019Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Kenneth Brian Doering, Gregory J. Wilson, Karthik Ramanathan, Mario D. Silvetti, Kevin Griffin
-
Publication number: 20210087681Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Joseph AuBuchon, Sanjeev Baluja, Michael Rice, Arkaprava Dan, Hanhong Chen
-
Publication number: 20210090917Abstract: Embodiments of the disclosure are directed to load lock chambers and methods of using load lock chambers. The load lock chambers include a middle section, an upper section connected to the middle section and a lower section connected to the middle section. A slit valve in a facet on the outside of the middle section provides an opening to access the middle volume from outside the load lock.Type: ApplicationFiled: September 22, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: William T. Weaver, Andrew J. Constant, Shay Assaf, Jacob Newman
-
Publication number: 20210087685Abstract: Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Ashutosh Agarwal, Sanjeev Baluja
-
Publication number: 20210090897Abstract: The present disclosure generally relates to methods for selectively etching copper, cobalt, and/or aluminum layers on a substrate semiconductor manufacturing applications. A substrate comprising one or more copper layers, cobalt layers, or aluminum layers is transferred to a processing chamber. The surface of the copper, cobalt, or aluminum layer is oxidized. The oxidized copper, cobalt, or aluminum surface is then exposed to hexafluoroacetylacetonate vapor. The hexafluoroacetylacetonate vapor reacts with the oxidized copper, cobalt, or aluminum surface to form a volatile compound, which is then pumped out of the chamber. The reaction of the oxidized copper, cobalt, or aluminum surface with the hexafluoroacetylacetonate vapor selectively atomic layer etches the copper, cobalt, or aluminum surface.Type: ApplicationFiled: August 27, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Nitin DEEPAK, Prerna Sonthalia GORADIA
-
Publication number: 20210087677Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.Type: ApplicationFiled: September 22, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Keith T. Wong, HyoJin Kim
-
Patent number: 10954594Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.Type: GrantFiled: December 2, 2015Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Viachslav Babayan, Qiwei Liang, Tobin Kaufman-Osborn, Ludovic Godet, Srinivas D. Nemani
-
Patent number: 10957518Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.Type: GrantFiled: March 24, 2020Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Lawrence Wong, Steven Lane, Yang Yang, Srinivas D. Nemani, Praburam Gopalraja
-
Patent number: 10957533Abstract: Embodiments of the present disclosure provide methods and apparatus for forming and patterning features in a film stack disposed on a substrate. In one embodiment, a method for patterning a conductive layer on a substrate includes supplying a gas mixture comprising a chlorine containing gas at a first flow rate to etch a first conductive layer disposed on the substrate, lowing the chlorine containing gas in the first gas mixture to a second flow rate lower than the first flow rate to continue etching the first conductive layer, and increasing the chlorine containing gas in the first gas mixture to a third flow rate greater than the second flow rate to remove the first conductive layer from the substrate.Type: GrantFiled: October 17, 2019Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Hao Jiang, He Ren, Hao Chen, Mehul B. Naik
-
Patent number: 10954130Abstract: A method for producing an additive for reclaiming oil from a fluid product stream and a treated silica with controlled hydrophobicity are disclosed. The method includes the steps of providing silica or silicate with a particle size of between 3.0 ?m to 20 ?m, the silica or silicates having an agglomerate size of between 10 ?m to 100 ?m and being chosen to achieve the desired particle-size range and with a controlled level of hydrophobicity; treating the silica or silicate with a silicone or silane to make it hydrophobic; and controlling the hydrophobicity of the silica or silicate by varying the temperature and treatment time of the silica or silicate, amount of a treating material used to treat the silica or silicate, and the molecular weight of the treating material. The additive improves oil extraction and concentration from a fluid product stream.Type: GrantFiled: May 5, 2020Date of Patent: March 23, 2021Assignee: Applied Material Solutions, Inc.Inventors: Michael T. Jennings, Robert Wilson
-
Patent number: 10957572Abstract: A gasket for a substrate support assembly may have a top surface having a surface area and a plurality of zones that together define the surface area of the top surface. The plurality of zones may comprise at least a) a first zone comprising a first stack of gasket layers, the first zone having a first average thermal conductivity in a first direction, and b) a second zone comprising one or more gasket layers, the second zone having a second average thermal conductivity in the first direction.Type: GrantFiled: May 2, 2018Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventor: Vijay D. Parkhe
-
Patent number: 10954596Abstract: A dual channel showerhead comprising a first plurality of channels formed in the back surface of the showerhead and extending from a first end to a second end, a second plurality of channels formed through the thickness of the showerhead and extending from a first end to a second end, a first end plenum in fluid connection with the second plurality of channels at the first end and a second end plenum in fluid connection with the second plurality of channels at the second end. Processing chambers including the dual channel showerhead and a blocker ring separating the edge ring from the pumping ring are also discussed.Type: GrantFiled: December 5, 2017Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Alexander S. Polyak, Joseph Yudovsky