Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

Abstract: A diagnostic disc includes a disc body having a sidewall around a circumference of the disc body and at least one protrusion extending outwardly from a top of the sidewall. A non-contact sensor is attached to an underside of each of the at least one protrusion. A a printed circuit board (PCB) is positioned within an interior formed by the disc body. Circuitry is disposed on the PCB and coupled to each non-contact sensor, the circuitry including at least a wireless communication circuit, a memory, and a battery. A cover is positioned over the circuitry inside of the sidewall, wherein the cover seals the circuitry within the interior formed by the disc body from an environment outside of the disc body.

Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Abstract: Exemplary semiconductor structures for neuromorphic applications may include a first layer overlying a substrate material. The first layer may be or include a first oxide material. The structures may include a second layer disposed adjacent the first layer. The second layer may be or include a second oxide material. The structures may also include an electrode material deposited overlying the second layer.

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

Abstract: A substrate assembly may include a substrate base; and a low emission implantation mask, disposed on the substrate base. The low emission implantation mask may include a carbon-containing material, the carbon-containing material comprising an isotopically purified carbon, formed from a 12C carbon isotope precursor.

Abstract: A method of etching a hardmask layer formed on a substrate is provided. The method includes supplying an etching gas mixture to a processing region of a processing chamber. A device is disposed in the processing region when the etching gas mixture is supplied to the processing region. The device comprises a substrate and a hardmask layer formed over the substrate. The etching gas mixture comprises a fluorine-containing gas, a silicon-containing gas, and an oxygen-containing gas. The method further includes providing RF power to the etching gas mixture to form a plasma in the processing region. The plasma is configured to etch exposed portions of the hardmask layer.

Abstract: A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.

Abstract: The present disclosure generally relates to an electrostatic chuck for processing substrates. The electrostatic chuck includes a facilities plate and an insulator disposed between a cooling base and a ground plate. A support body is coupled to the cooling base for supporting a substrate thereon. A ring is configured to surround the insulator. The ring is formed from a material that is resistant to degradation from exposure to a manufacturing process. The ring optionally includes an extension configured to surround the facilities plate.

Abstract: Processing methods may be performed to produce three-dimensional interconnects on a substrate. The methods may include forming a first metal interconnect layer over a semiconductor substrate. The methods may include forming a first dielectric layer over the first metal interconnect layer. The methods may include forming a second metal interconnect layer over the first dielectric layer. The methods may include forming a patterning mask overlying the second metal interconnect layer. The methods may also include simultaneously etching each of the first metal interconnect layer, the first dielectric layer, and the second metal interconnect layer to expose the substrate to produce a multilayer interconnect structure in a first lateral direction.

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

Abstract: Described herein are RF components with a modified surface material to improve chemical resistance and decrease metal contamination within processing chambers. Also disclosed herein are methods of manufacturing and using the same. Some embodiments of the disclosure comprise a base material with a Young's modulus greater than or equal to 75 GPa. Some embodiments of the disclosure have a modified surface material comprising one or more of aluminum, lanathanum and magnesium.

Abstract: PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 ?/min.

Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.

Abstract: Disclosed herein is an article comprising one or more channels and a multi-layer protective coating on the one or more channels. The multi-layer protective coating includes an anodization layer comprising a plurality of cracks and a plurality of pores, a sealing layer on the anodization layer, and a top layer on the sealing layer. The sealing layer comprises a metal oxide, the seals the plurality of cracks and the plurality of pores, and has a porosity of approximately 0%. The top layer comprises a rare earth oxide, a rare earth fluoride, or a rare earth oxyfluoride, has a different material composition than the sealing layer, and has a porosity of approximately 0%.

Abstract: The present invention discloses a composite thermal insulator including a first transparent substrate layer, a second transparent substrate layer, and a near-infrared shielding layer positioned between the first transparent substrate layer and the second transparent substrate layer, and the near-infrared shielding layer is formed by dispersively fixing multiple nanoparticles containing tungsten oxide in polyethylene terephthalate. The composite thermal insulator can't change color under sunlight so that it can be used for light output controlling and thermal isolation.

Abstract: The present disclosure relates to a method that includes receiving input of a search term for a query and identifying a key mapped to the search term. The method further includes identifying a results page template and default data that correspond to the key, obtaining structured data that is associated with the equipment from a data source storing the structured data, and obtaining unstructured data that is associated with the equipment from a data source storing the unstructured data. The method further includes providing a results page via a graphical user interface (GUI), the results page including the results page template populated with the default data and equipment related results for the query. The equipment related results include the structured data that is associated with the equipment and the unstructured data that is associated with the equipment.

Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.