Patents Assigned to Applied Materials
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Patent number: 10854416Abstract: An ion source having a thermally isolated repeller is disclosed. The repeller comprises a repeller disk and a plurality of spokes originating at the back surface of the repeller disk and terminating in a post. In certain embodiments, the post may be hollow through at least a portion of its length. The use of spokes rather than a central stem may reduce the thermal conduction from the repeller disk to the post. By incorporating a hollow post, the thermal conduction is further reduced. This configuration may increase the temperature of the repeller disk by more than 100° C. In certain embodiments, radiation shields are provided on the back surface of the repeller disk to reduce the amount of radiation emitted from the sides of the repeller disk. This may also help increase the temperature of the repeller. A similar design may be utilized for other electrodes in the ion source.Type: GrantFiled: September 10, 2019Date of Patent: December 1, 2020Assignee: Applied Materials, Inc.Inventors: Adam M. McLaughlin, Craig R. Chaney, Jordan B. Tye
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Publication number: 20200371424Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from copper and hafnium.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Publication number: 20200371429Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from copper and tellurium.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Publication number: 20200370198Abstract: Systems for electroplating seal inspection may include a module configured to support a seal for inspection. The module may include a set of supports positioned to contact an interior rim of the seal. The module may be configured to rotate the seal about a central axis. The system may also include a detector positioned on the module. The detector may be positioned to scan an exterior surface of the seal.Type: ApplicationFiled: April 27, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Matthew Heller, David Bricker
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Publication number: 20200371428Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from boron and nickel.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Publication number: 20200371422Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium and germanium.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Publication number: 20200371431Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer embedded in the multilayer stack of reflective layers.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Wen Xiao, Vibhu Jindal
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Publication number: 20200373309Abstract: Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.Type: ApplicationFiled: May 7, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventor: Russell Chin Yee Teo
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Publication number: 20200373200Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Steven C.H. Hung, Srinivas D. Nemani, Yixiong Yang, Susmit Singha Roy, Nikolaos Bekiaris
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Publication number: 20200371430Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from bismuth and iron.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Publication number: 20200373411Abstract: Method of forming an electronic device with a bottom isolation dielectric between a pair of gate stacks is described. Each of the gate stacks comprises a plurality of gate layers. A sacrificial film having a liner on a top and side thereof is on top of the gate layers. A capping layer is on the top of the liner.Type: ApplicationFiled: May 15, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Byeong Chan Lee, Tejinder Singh, Bencherki Mebarki
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Publication number: 20200373318Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M. Barnal Ramos, Shih Chung Chen
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Publication number: 20200373178Abstract: Apparatus and methods to process one or more substrate are described. A processing chamber comprises a support assembly, a chamber lid, and a controller. The chamber lid has a front surface facing the support assembly, a first sensor on the front surface and a second sensor on the front surface, the first sensor positioned at a first distance from the central rotational axis, and the second sensor positioned at a second distance from the central rotational axis greater than the first distance. The controller is configured to determine if a substrate is within or outside of the substrate support region of the support assembly.Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Sanggyum Kim, Prasanth Narayanan, Subramanian Tamilmani, Mandyam Sriram
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Publication number: 20200373404Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20200370180Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.Type: ApplicationFiled: May 18, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Ashutosh Agarwal, Sanjeev Baluja, Dhritiman Subha Kashyap, Kartik Shah, Yanjun Xia
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Publication number: 20200371423Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from iron and tellurium.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Publication number: 20200373168Abstract: A method may include forming a plasma of a fluorine-containing precursor and contacting a semiconductor substrate with plasma effluents. The semiconductor substrate may include a layer of a first silicon-containing material having a first germanium content formed over the semiconductor substrate, and alternating layers of a second silicon-containing material and a third silicon-containing material over the layer of the first silicon-containing material. The third silicon-containing material may have a second germanium content. The method may further include laterally recessing the third silicon-containing material relative to the first and second silicon-containing materials. The method may further include depositing a spacer material adjacent to the third silicon-containing material relative to the first and second silicon-containing materials. The method may also include etching the first silicon-containing material relative to the second silicon-containing material and the spacer material.Type: ApplicationFiled: April 16, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventor: Byeong Chan Lee
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Publication number: 20200371427Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium and antimony.Type: ApplicationFiled: May 19, 2020Publication date: November 26, 2020Applicant: Applied Materials, Inc.Inventors: Shuwei Liu, Vibhu Jindal
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Patent number: 10843306Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.Type: GrantFiled: June 28, 2018Date of Patent: November 24, 2020Assignee: Applied Materials, Inc.Inventors: Rajeev Bajaj, Barry Lee Chin, Terrance Y. Lee
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Patent number: 10845317Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.Type: GrantFiled: May 23, 2017Date of Patent: November 24, 2020Assignee: Applied Materials, Inc.Inventors: Todd Egan, Mehdi Vaez-Iravani, Samer Banna, Kyle Tantiwong, Gregory Kirk, Abraham Ravid, Yaoming Shen