Abstract: A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.

Abstract: An electro-processing apparatus has a contact ring including a seal which is able to compensate for electric field distortions created by a notch (or other irregularity) on the wafer or work piece. The shape of the contact ring at the notch is changed, to reduce current crowding at the notch. The change in shape changes the resistance of the current path between a thief electrode and the wafer edge to increase thief electrode current drawn from the region of the notch. As a result, the wafer is plated with a film having more uniform thickness.

Abstract: Temperature measurement is described for a substrate carrier using a heater element array. In one example a method includes measuring a first combined current load of each of a plurality of heating elements in the electrostatic chuck, changing a power status of a first heating element of the plurality of heating elements, measuring a second combined current load of each of the plurality of heating elements after changing the power status of the first heating element, determining the difference between the first and second combined current loads, determining a temperature of the first heating element using the difference, and reverting the power status of the first heating element to that before the change and repeating changing power, measuring a current load, determining a difference, and determining a temperature for each of the other heating elements of the plurality to determine a temperature at each of the heating elements of the plurality.

Abstract: Methods of dicing semiconductor wafers are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a material layer over and between the plurality of singulated dies above the dicing tape. The method also includes expanding the dicing tape, wherein a plurality of particles is collected on the material layer during the expanding.

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

Abstract: An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

Abstract: Embodiments disclosed herein generally relate to methods, systems, and non-transitory computer readable medium for scheduling a substrate processing sequence in an integrated substrate processing system. A client device assigns a processing sequence to each substrate in a batch of substrates to be processed. The client device assigns a processing chamber to each process in the process sequence for each processing chamber in the integrate substrate processing system. The client device generates a processing model for the batch of substrates. The processing model defines a start time for each substrate in each processing chamber. The client device generates a timetable for the batch of semiconductor substrates based off the processing model. The client device processes the batch of substrates in accordance with the timetable.

Abstract: The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture p

Abstract: A module for an additive manufacturing system includes a frame configured to be removably mounted on a movable support, a dispenser configured to deliver a layer of particles on a platen that is separate from the frame or an underlying layer on the platen, a heat source configured to heat the layer of particles to a temperature below a temperature at which the particles fuse, and an energy source configured to fuse the particles. The dispenser, heat source and energy source are positioned on the frame in order along a first axis, and the dispenser, heat source and energy source are fixed to the frame such that the frame, dispenser, heat source and energy source can be mounted and dismounted as a single unit from the support.

Abstract: Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.

Abstract: Polishing pad cleaning systems and related methods are disclosed. A rotatable platen comprising a polishing pad in combination with a fluid, such as a polishing fluid, contacts a substrate to planarize material at the surface thereof and resultantly creates debris. A cleaning system introduces a spray system to remove debris from the polishing pad to prevent substrate damage and improve efficiency, a waste removal system for removing used spray, used polishing fluid, and debris from the polishing pad, and a polishing fluid delivery system for providing fresh polishing fluid to the polishing pad, such that the substrate only receives fresh polishing fluid upon each complete rotation of the platen. In this manner, within die performance is enhanced, the range of certain CMP processes is improved, scratches and contamination are avoided for each polished substrate and for later-polished substrates, and platen temperatures are reduced.

Abstract: Apparatus and methods for processing a semiconductor wafer including a two-axis lift-rotation motor center pedestal with vacuum capabilities. Wafers are subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer through interface with the motor assembly.

Abstract: An additive manufacturing system includes a platen having a top surface to support an object being manufactured, a support that is movable along a vertical axis, an actuator to move the support along the vertical axis, a dispenser to deliver a plurality of successive layers of feed material over the platen, an energy source configured to fuse at least a portion of the feed material, and a controller. The dispenser and energy source are mounted on the support over the platen such that motion of the support along the vertical axis moves the dispenser and energy source together toward or away from the top surface of the platen. The controller is coupled to the actuator, dispenser and energy source and configured to cause the actuator to move the support to lift the dispenser and actuator away from the top surface after each of the plurality of successive layers is delivered.

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Abstract: Processing methods may be performed to limit damage of features of a substrate, such as missing fin damage. The methods may include forming a plasma of an inert precursor within a processing region of a processing chamber. Effluents of the plasma of the inert precursor may be utilized to passivate an exposed region of an oxygen-containing material that extends about a feature formed on a semiconductor substrate. A plasma of a hydrogen-containing precursor may also be formed within the processing region. Effluents of the plasma of the hydrogen-containing precursor may be directed, with DC bias, towards an exposed silicon-containing material on the semiconductor substrate. The methods may also include anisotropically etching the exposed silicon-containing material with the plasma effluents of the hydrogen-containing precursor, where the plasma effluents of the hydrogen-containing precursor selectively etch silicon relative to silicon oxide.

Abstract: During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top surface of an underlying dielectric layer of the substrate exposed and determine based on the first signal. An initial value of the second signal at the determined clearance time is determined. An offset is added to the initial value to generate a threshold value, and a polishing endpoint is triggered when the second signal crosses the threshold value.

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber.

Abstract: A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.