Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.

Abstract: Embodiments of the invention provide a method and apparatus for processing substrates using a multi-chamber processing system, or cluster tool, that has an increased system throughput, and a reduced footprint. The various embodiments of the cluster tool may utilize two or more robots that are configured in a parallel processing configuration to transfer substrates between the various processing chambers retained in the processing racks so that a desired processing sequence can be performed on the substrates. Generally, the various embodiments described herein are advantageous since each row or group of substrate processing chambers are serviced by two or more robots to allow for increased throughput and increased system reliability. Also, the various embodiments described herein are generally configured to minimize and control the particles generated by the substrate transferring mechanisms, to prevent device yield and substrate scrap problems that can affect the cost of ownership of the cluster tool.

Abstract: A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Abstract: A polishing system includes a platen, a carrier head to hold a surface of a substrate against a polishing pad on the platen, a monitoring module including a light source and a detector, an optical fiber having a proximate end coupled to the monitoring module and a distal end, and an optical head removably mounted in the platen. The optical head holds the distal end of the optical fiber to direct light through a window in the polishing pad to the surface of the substrate and receive reflected light from the surface of the substrate, and the optical head is configured to adjust a distance from the distal end of the fiber to the window.

Abstract: A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

Abstract: Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: The present invention generally comprises a method and an apparatus for recycling electrochemical mechanical polishing (ECMP) fluid. A selected portion of used ECMP fluid may be delivered to a recycling unit where the fluid may be refurbished. The concentration of the components that are present in the selected portion of used ECMP fluid may be measured. Based upon the measurements, individual components of the ECMP fluid may be selectively dosed into the selected portion in an amount sufficient to ensure that the selected portion of used ECMP fluid, once refurbished, contains the appropriate concentration of components. Alternatively, a predetermined amount of virgin ECMP fluid may be added to the selected portion. The refurbished ECMP fluid may be recycled into an ECMP system for use in another ECMP process.

Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Abstract: A load lock chamber and method for transferring large area substrates is provided. In one embodiment, a load lock chamber suitable for transferring large area substrates includes a plurality of vertically stacked single substrate transfer chambers. The configuration of vertically stacked single substrate transfer chambers contributes to reduced size and greater throughput as compared to conventional state of the art, dual slot dual substrate designs. Moreover, the increased throughput has been realized at reduced pumping and venting rates, which corresponds to reduced probability of substrate contamination due to particulates and condensation.

Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

Abstract: Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.

Abstract: Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.

Abstract: The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.

Abstract: Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.

Abstract: A target assembly including a plurality of target tiles bonded to a backing plate by adhesive, for example of indium or conductive polymer, filled into recesses in the backing plate formed beneath each of the target tiles. A sole peripheral recess formed as a rectangular close band may be formed inside the tile periphery. Additional recesses may be formed inside the peripheral recess, preferably symmetrically arranged about perpendicular bisectors of rectangular tiles. The depth and width of the recesses may be varied to control the amount of stress and the stress direction.