Abstract: An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a previously etched dielectric layer to a plasma of hydrogen and optional nitrogen, a larger amount of water vapor, and a yet larger amount of argon or helium. Especially for porous low-k dielectrics, the main ashing plasma additionally contains a hydrocarbon gas such as methane. The main ashing may be preceded by a short surface treatment by a plasma of a hydrogen-containing reducing gas such as hydrogen and optional nitrogen.

Abstract: Methods and devices are provided for profiling a beam of light that includes a wavelength ?. The beam of light is received. Secondary light is generated at a wavelength ?? different from wavelength ? by fluorescing a material with the received beam of light. The secondary light is separated from the received beam of light. The separated secondary light is optically directed to a sensor.

Abstract: Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metrics. In another embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model.

Abstract: A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.

Abstract: In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.

Abstract: A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.

Abstract: An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber.

Abstract: The present invention provides apparatus and method for controlling mix ratio of gas supplied to a processing chamber integrated with chamber pressure. In one embodiment, an integrated controller is used to adjust mix ratio and chamber pressure. In one embodiment, the mix ratio and chamber pressure may be adjusted using a flow sensor and a control valve disposed in each gas supply line. In one embodiment, the flow sensor used in each gas supply line is insensitive to upstream pressure perturbations.

Abstract: Embodiments of a vacuum conveyor system are provided herein. In one embodiment a vacuum conveyor system includes a first vacuum sleeve having a plurality of rollers that support and move substrates through the first vacuum sleeve. A port is provided for sealably coupling the first vacuum sleeve to a process chamber. A first substrate handler is disposed proximate the port. Multiple ports may be provided for sealably coupling the first vacuum sleeve to a plurality of process chambers. A dedicated substrate handler is provided for each process chamber. A second vacuum sleeve may be sealably coupled to an opposing side of the process chambers. The vacuum conveyor system may be modular with independent modules linked via load lock chambers. The plurality of rollers may compensate for any sag of the leading edge of a substrate being transported thereupon.

Abstract: An apparatus and method incorporating at least two sensors that detect the presence of substrate defects, such as breakage or misalignment, along the lengths of at least two parallel edges of a moving substrate. In one embodiment, an apparatus for detecting substrate defects includes a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate as the substrate passes the sensors. In another embodiment, an apparatus for detecting substrate defects includes a robot having a substrate support surface, and a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate during substrate transfer on the substrate support surface.

Abstract: A battery powered sensing device for diagnosing a processing system and method for using the same are provided. The support platform generally has physical characteristics, such as size, profile height, mass, flexibility and/or strength, substantially similar to those of the substrates that are to be processed in the processing system, so the sensor device can be transferred through the processing system in a manner similar to the manner in which production substrates are transferred through the processing system.

Abstract: A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

Abstract: A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Abstract: In a first aspect, a first method is provided for electronic device manufacturing. The first method includes the steps of (1) receiving a request to transfer a carrier from a first substrate loading station to a second substrate loading station of an electronic device manufacturing facility including a plurality of substrate loading stations, wherein the facility further includes a plurality of carrier supports coupled to a conveyor system adapted to move the carrier within the facility; (2) assigning one of the plurality of carrier supports to transfer the carrier from the first substrate loading station to the second substrate loading station such that at least one of a time required for the transfer is reduced and balance of the conveyor system is maintained; (3) moving the carrier from the first substrate loading station; and (4) moving the carrier to the second substrate loading station. Numerous other aspects are provided.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Abstract: The invention relates to a device for the continuous coating of a strip-like substrate in a vacuum, especially for producing coating patterns on the substrate, with a printing roller and a backing roller, the substrate guided between the printing roller and the backing roller. The invention device includes a coating or release agent transferable to the substrate via the printing roller and a servo unit that has a controllable servo motor, wherein in a working position adjustable with the servo unit, the printing roller and the backing roller are in operative connection with one another. The object of the invention is to improve the abadjustability of the generic device. The object is achieved by the servo unit's having a controllable servo motor.

Abstract: The invention relates to a process and to a web deposition machine for coating a plastic substrate with at least one metal layer, in particular plastic foil for flexible, printed circuit boards, wherein before depositing a first layer onto a surface of the plastic substrate to be deposited, a non depositing pretreatment of this surface is performed. It is the object of the invention to provide a process as described above through which the adhesion of metal layers on a plastic substrate is improved. Furthermore, a web deposition machine shall be provided through which such process can be performed. The object is accomplished through a process so that the non depositing pretreatment is performed in two steps, thus in a first step in which the surface of the plastic substrate (2) is cleaned with a non reactive low energy plasma (14), and in a second step in which the surface of the plastic substrate (2) is activated through reactive high energy ion radiation (17).

Abstract: A method for calibrating a controller of a robotic arm in a microelectronics manufacturing apparatus that includes storing a default position for an edge detector, moving a blade on the robotic arm based on the default position of the edge detector such that at least three edge points on the blade pass through and are detected by the edge detector, generating a plurality of arm position measurements from an arm position sensor by measuring a position with the arm position sensor of the robotic arm at each position of the robotic arm at which an edge point of the blade is detected by the edge detector, and determining at least one of an actual position of the edge detector and an offset for measurements of the arm position sensor based on the plurality of arm position measurements.

Abstract: A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.

Abstract: Apparatus for optical inspection of a sample includes a radiation source, adapted to irradiate a spot on the sample with coherent radiation, and collection optics, adapted to collect the radiation scattered from the spot so as to form a beam of scattered radiation. A diffractive optical element (DOE) is positioned to intercept the beam of scattered radiation and is adapted to deflect a first portion of the beam by a predetermined offset relative to a second portion of the beam, and then to optically combine the first portion with the second portion to generate a product beam. A detector is positioned to receive the product beam and to generate a signal responsive thereto, which is processed by a signal processor so as to determine an autocorrelation value of the product beam.