Patents Assigned to Applied Materials
  • Method for forming ultra low k films using electron beam
    Patent number: 7422774
    Abstract: The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Yi Zheng, Srinivas D. Nemani, Li-Qun Xia, Eric Hollar, Kang Sub Yim
  • Method for plasma ignition
    Patent number: 7422664
    Abstract: A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Alan Alexander Ritchie, Adolph Miller Allen
  • Method and apparatus for electroprocessing a substrate with edge profile control
    Patent number: 7422982
    Abstract: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: You Wang, Jie Diao, Stan D. Tsai, Lakshmanan Karuppiah
  • Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
    Patent number: 7422654
    Abstract: A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Roger Alan Lindley, Jingbao Liu, Bryan Y. Pu, Keiji Horioka
  • Conductive polishing article for electrochemical mechanical polishing
    Patent number: 7422516
    Abstract: Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.
    Type: Grant
    Filed: October 8, 2007
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Paul D. Butterfield, Liang-Yuh Chen, Yonqi Hu, Antoine P. Manens, Rashid Mavliev, Stan D. Tsai, Feng Q. Liu, Ralph Wadensweiler, Lizhong Sun, Siew S. Neo, Alain Duboust
  • Rapid detection of imminent failure in laser thermal processing of a substrate
    Patent number: 7422988
    Abstract: A thermal processing system includes a source of laser radiation having an array of lasers emitting light at a laser wavelength, a substrate support, optics disposed between said source and said substrate support for forming a line beam in a substrate plane of the substrate support from the light emitted by the source of laser radiation, and scanning apparatus for effecting movement of said line beam relative to said substrate support in a direction transverse to the longitudinal axis of said line beam. The system further includes a housing encompassing said optics, a light detector disposed inside said housing for sensing an ambient light level, a power supply coupled to the source of laser radiation, and a controller governing said power supply and responsive to said light detector for interrupting said power supply upon an increase in the output of said light detector above a threshold ambient level.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Bruce E. Adams, Dean Jennings, Aaron M. Hunter, Abhilash J. Mayur, Vijay Parihar
  • Processing chamber configured for uniform gas flow
    Patent number: 7422637
    Abstract: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Vincent Ku, Ling Chen, Howard Grunes, Hua Chung
  • Single-sided inflatable vertical slit valve
    Patent number: 7422653
    Abstract: A vacuum chamber having a gate valve including a chamber housing defining an internal vacuum region and first and second openings through the chamber housing and a gate valve secured to the chamber housing. The gate valve includes a sealing door located in the processing region and configured to seal the first opening in the chamber housing; a vertical actuator located outside the chamber housing; a one-sided horizontal actuator located within the processing region and connected to the sealing door; and a valve shaft extending through the second opening in the chamber housing and connecting the vertical actuator to the one-sided horizontal actuator.
    Type: Grant
    Filed: July 13, 2004
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Jeff Blahnik, Joe Kraus, Mike Rice
  • Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
    Patent number: 7422775
    Abstract: A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.
    Type: Grant
    Filed: May 17, 2005
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma, Vijay Parihar, Dean Jennings, Abhilash J. Mayur, Amir Al-Bayati, Andrew Nguyen
  • Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
    Patent number: 7422776
    Abstract: Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In accordance with another embodiment, as-deposited carbon containing silicon oxide films incorporate a porogen whose subsequent liberation reduces film stress.
    Type: Grant
    Filed: June 10, 2005
    Date of Patent: September 9, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Kang Sub Yim, Lihua Li Huang, Francimar Schmitt, Li-Qun Xia
  • SELECTIVE COPPER-SILICON-NITRIDE LAYER FORMATION FOR AN IMPROVED DIELECTRIC FILM/COPPER LINE INTERFACE
    Publication number: 20080213997
    Abstract: A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.
    Type: Application
    Filed: December 5, 2007
    Publication date: September 4, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Sang M. Lee, Vladimir Zubkov, Zhenijiang Cui, Meiyee Shek, Li-Qun Xia, Hichem M'Saad
  • Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
    Patent number: 7419551
    Abstract: A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry.
    Type: Grant
    Filed: May 3, 2006
    Date of Patent: September 2, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Madhavi R. Chandrachood, Richard Lewington, Darin Bivens, Ajay Kumar, Ibrahim M. Ibrahim, Michael N. Grimbergen, Renee Koch, Sheeba J. Panayil
  • Methods and apparatus for providing fluid to a semiconductor device processing apparatus
    Patent number: 7418978
    Abstract: In a first aspect, a valve assembly is provided that includes a valve assembly output adapted to output at least one of DI water and a chemical. A first valve of the valve assembly includes (1) a first input adapted to receive the chemical; (2) a first output adapted to circulate the chemical to a chemical return; and (3) a second output adapted to output the chemical to the valve assembly output. The valve assembly also includes a second valve positioned downstream from the first valve. The second valve includes (1) an input adapted to receive deionized (DI) water; and (2) an output adapted to output DI water to the valve assembly output. A check valve is coupled between the second output of the first valve and the output of the second valve, and the first valve, second valve and check valve are included in a single manifold.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: September 2, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Sandy Shih-Hsun Chao, Songjae Lee, Ho Seon Shin
  • Optical proximity correction in raster scan printing based on grayscale manipulation of the bitmap
    Patent number: 7420710
    Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via photolithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: September 2, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Asher Klatchko, Peter Y. Pirogovsky
  • STRESS MEASUREMENTS DURING LARGE-MISMATCH EPITAXIAL PROCESSES
    Publication number: 20080206902
    Abstract: A substrate is disposed within a processing chamber. A nitrogen precursor and a group-III precursor are flowed into the processing chamber. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process at an elevated temperature within the processing chamber using the nitrogen precursor and the group-III precursor. Light beams are directed to a surface of the layer and light spots corresponding to reflections of the light beams are received from the surface at a position-sensitive detector. Positions of the light spots on the position-sensitive detector are determined from photocurrent induced in a photodiode in the position-sensitive detector. A curvature of the layer is determined from the positions of the light spots.
    Type: Application
    Filed: February 26, 2007
    Publication date: August 28, 2008
    Applicant: Applied Materials, Inc., A Delaware corporation
    Inventors: David Bour, Jacob Grayson
  • Beam exposure correction system and method
    Patent number: 7417233
    Abstract: A system and method of determining shape and position corrections of a beam such as a particle or other beam used in a system such as a particle beam lithography. The method of providing corrected deflector voltages may include determining a voltage step value by subtracting a previous deflector voltage value with a current deflector voltage value; determining a plurality of correction values using the voltage step value and an exposure time for the current deflector voltage value; selecting a current voltage correction value from the plurality of correction values using the current deflector voltage value; and calculating a corrected deflector voltage value by adding the current voltage correction value to the current deflector voltage value.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: August 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Scott C. Stovall, Benyamin Buller, Jimmy Iskandar, Ming Lun Yu
  • Deposition methods for barrier and tungsten materials
    Patent number: 7416979
    Abstract: Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: August 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Ki Hwan Yoon, Yonghwa Chris Cha, Sang Ho Yu, Hafiz Farooq Ahmad, Ho Sun Wee
  • Method for fabricating controlled stress silicon nitride films
    Patent number: 7416995
    Abstract: A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.
    Type: Grant
    Filed: November 12, 2005
    Date of Patent: August 26, 2008
    Assignee: Applied Materials, Inc.
    Inventors: R. Suryanarayanan Iyer, Sanjeev Tandon, Jacob W. Smith
  • Etch pattern definition using a CVD organic layer as an anti-reflection coating and hardmask
    Publication number: 20080197109
    Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.
    Type: Application
    Filed: October 31, 2007
    Publication date: August 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: David S. Mui, Wei Liu, Thorsten Lill, Christopher Dennis Bencher, Yuxiang May Wang
  • SUBSTRATE HEATING METHOD AND APPARATUS
    Publication number: 20080197125
    Abstract: Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: ANQING CUI, Sean M. Seutter, Jacob W. Grayson, R. Suryanarayanan Iyer