Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the purpose.

Abstract: A variable capacitor that provides a full range of capacitance, while reducing the amount of rotation necessary to effect maximum variation in capacitance, and while eliminating any wear-related deterioration in device performance includes at least two coplanar, electrically isolated sets of parallel electroconductive members so configured as to form a fixed set of capacitor plates, each of which may be separately electrically connected to an electrical circuit. A movable group having at least one member including at least one electroconductive area is positioned parallel to, and spaced from, the fixed set of plates. The movable group is adapted for rotation about an axis perpendicular to a surface plane of the first set of plates to vary an amount by which said movable group overlaps the surface of each of said capacitor plates, and thereby provide variable capacitive coupling between the two isolated electroconductive members that comprise the fixed set of capacitor plates.

Abstract: An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.

Abstract: A method and arrangement for lifting lowering and centering a substrate on a surface employs lift pins have conical tips. A capture range is provided by the conical tips to capture and center misaligned wafers. One or more of the pins are inclined in certain embodiments to enhance the alignment capability of the lift pins. The inclined lift pins, when retracting into a support member at an angle, move a supported substrate horizontally into proper alignment.

Abstract: An apparatus and method for sputtering ionized material onto a workpiece with the aid of a plasma which ionizes the material, utilizing: a support member having a workpiece support area for supporting a workpiece that has a given diameter; a target constituting a source of material to be sputtered; and a coil located between the target and the workpiece support for creating a plasma which ionizes material sputtered from the target, the coil enclosing a region, the support member being maintained at a potential which causes ionized material to be attracted to the support member. The coil is configured and operated to shape the plasma in a manner to promote redirection of material sputtered from the center of the target back to the target.

Abstract: A wafer transfer cassette of the kind which includes a support frame, a first wafer supporting construction, and a second wafer supporting construction. The support frame includes first and second vertically extending support structures which are horizontally spaced from one another. The first wafer supporting construction includes a first bracket portion and a first fin portion extending from the first bracket portion. The first bracket portion is mounted to the first support structure in a position wherein the first fin portion extends from the first bracket portion towards the second support structure. The second wafer supporting construction includes a second bracket portion and a second fin portion extending from the second bracket portion. The second bracket portion is mounted to the second support structure in a position wherein the second fin portion extends from the second support structure towards the first support structure.

Abstract: The present invention provides optimized designs that allow the coverage of the full surface of a receiving face in a substrate while at the same time reducing material deposition on the edge of the substrate, material deposition on and/or scratching of the backside of the substrate. While the methods and apparatus of the invention are described within the framework of aluminum deposition chambers, it is contemplated that the invention will be equally effective in all other semiconductor processing chambers where avoiding edge and/or backside deposition, scratching, and/or sticking may be desirable. The invention provides a support member having a deposit collection channel with slanted walls to trap deposit particles that do not depose of the substrate thus preventing deposition and sticking in the backside of a processed substrate.

Abstract: A compact lifting device whose load arm is fixed to a cover of lid of a processing chamber provides, a tubular pan body with an externally easily adjustable spring counterweight type member passing through the tubular center of the pan body. The spring member is cleverly mounted between an upper and lower portion of the pan body and rotates with the pan body as the lift mechanism swings from side to side. An innovative center core mounting of the spring device allows loads from the lifted weight to be equally distributed on two side of the pan body. The rotation of the pan body is by the use of bearings which are constructed so that a flange of pan body is utilized as two races of a ball bearing further reducing the space need for mounting such a lifting device.

Abstract: The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface.

Abstract: A method for controlling the output power of the magnetron generator, where the method and apparatus defines an ignition power level that ensures that the magnetron generator provides a minimal level of power that will ignite the plasma and not result in a detrimental impedance mismatch between the magnetron and an applicator of a remote plasma source. When the user of the wafer processing system requests a power level (i.e., a requested power level) that is below this ignition level, the ignition level is used to ignite the plasma and the output power of the magnetron is gradually decreased to the requested power level. The decrease is performed within a predetermined time period.

Abstract: A carrier head for chemical mechanical polishing with a retaining ring having an inclined inner surface. The force of the edge of the substrate against the inclined surface causes a reactive force having a vertical component on the edge of the substrate. This vertical force can reduce the edge effect.

Abstract: An apparatus comprising a semiconductor processing chamber, a plasma generator, and a pipe connecting a semiconductor processing chamber and the plasma generator. The plasma generator includes a generation chamber, a radio frequency generator which generates an ion plasma within the generation chamber, and a magnetic device which confines the plasma primarily within a center region of the generation chamber.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage in a deposition process. In at least one aspect, a target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil. At least a portion of the electrons provided by the plasma and ionized target material are deflected by a magnetic field established adjacent to the substrate. Under the influence of the attracted electrons, positively charged particles are induced to move in the direction of the electrons. The magnetic field may be provided by one or more magnets located internally or externally to the processing chamber and which can be rotated to ensure uniform deposition of the electrons and ions on the device features.

Abstract: A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate.

Abstract: The present disclosure pertains to a method of patterning a semiconductor device feature which provides for the easy removal of any residual masking layer which remains after completion of a pattern etching process. The method provides for a multi-layered masking structure which includes a layer of high-temperature organic-based masking material overlaid by either a layer of a high-temperature inorganic masking material which can be patterned to provide an inorganic hard mask, or by a layer of high-temperature imageable organic masking material which can be patterned to provide an organic hard mask. The hard masking material is used to transfer a pattern to the high-temperature organic-based masking material, and then the hard masking material is removed. The high-temperature organic-based masking material is used to transfer the pattern to an underlying semiconductor device feature.

Abstract: The present invention provides a method and apparatus for forming an interconnect with application in small feature sizes (such as quarter micron widths) having high aspect ratios. Generally, the present invention provides a method and apparatus for depositing a wetting layer for subsequent physical vapor deposition to fill the interconnect. In one aspect of the invention, the wetting layer is a metal layer deposited using either CVD techniques or electroplating, such as CVD aluminum (Al). The wetting layer is nucleated using an ultra-thin layer, denoted as .di-elect cons. layer, as a nucleation layer. The .di-elect cons. layer is preferably comprised of a material such as Ti, TiN, Al, Ti/TiN, Ta, TaN, Cu, a flush of TDMAT or the like. The .di-elect cons. layer may be deposited using PVD or CVD techniques, preferably PVD techniques to improve film quality and orientation within the feature. Contrary to conventional wisdom, the .di-elect cons.

Abstract: A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method, or system that employs a separate hot chamber for hot deposition of material that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer.

Abstract: The present disclosure pertains to our discovery that residual stress residing in a tantalum film or tantalum nitride film can be controlled (tuned) by controlling particular process variables during film deposition. By tuning individual film stresses within a film stack, it is possible to balance stresses within the stack. Process variables of particular interest include: power to the sputtering target; process chamber pressure (i.e., the concentration of various gases and ions present in the chamber); substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power); power to an ionization source (typically a coil); and temperature of the substrate upon which the film is deposited. The process chamber pressure and the substrate offset bias most significantly affect the film tensile and compressive stress components, respectively.

Abstract: The present invention provides a method and apparatus for filling submicron features on a substrate with a polycrystalline metal such as copper or a copper alloy comprising at least 90% by weight of copper. The method comprises deposition of a polycrystalline metal layer which bridges the submicron features and has a grain size smaller than the submicron features, and exposing the polycrystalline metal layer to a high pressure processing gas at a temperature less than one half of the absolute melting temperature to extrude the metal layer into the submicron features.

Abstract: A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.