Patents Assigned to Applied Materials
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Patent number: 6156124Abstract: A transfer station and concomitant method for a chemical mechanical polishing system comprising a pair of buffer stations and a transport robot. The buffer stations and the ability to transport two wafers simultaneously with the transfer robot minimizes the exchange time for loading and unloading wafers into the chemical mechanical polishing system. The lowering of the exchange time improves the number of wafers processed per hour by the chemical mechanical polishing system. The transfer robot utilizes wafer edge grip features, adjustable wafer gripper force, minimum wafer contact points, fluid media for wafer present sensing, and mechanical interlocking mechanisms to protect both the wafer and the transfer station.Type: GrantFiled: October 6, 1999Date of Patent: December 5, 2000Assignee: Applied Materials, Inc.Inventor: Jim Tobin
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Patent number: 6152806Abstract: A chemical mechanical polishing apparatus includes a plurality of concentric rotatable platens for polishing a substrate. A polishing pad is attached to each platen. Each platen may be rotated independently in either clockwise or counter-clockwise direction.Type: GrantFiled: December 14, 1998Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventor: James C. Nystrom
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Patent number: 6152161Abstract: A valve lockout device having two pieces. A first piece of the device is a hollow object, substantially tubular or block-shaped, open at a bottom end and having slots open on two sides, that fits over a valve whose handle is to be fixed (or locked). A pocket in the first piece receives the handle and limits the motion of the handle relative to the valve body, thereby preventing operation of the valve. A second piece of the device is a substantially U-shaped object which is pivotally attached to the first piece. When the second piece is rotated to a closed position, it captures the valve handle in the pocket of the first piece, thereby preventing the valve lockout device from being removed. When the second piece is in the closed position, a padlock loop on the first piece extends through a padlock receiving opening in the second piece. Putting a padlock through the padlock loop will prevent the second piece from being rotated out of its closed position, thereby locking the device to the valve.Type: GrantFiled: October 21, 1998Date of Patent: November 28, 2000Assignee: Applied Materials Inc.Inventors: Chuckson Yokota, Miriam Schwartz, Robert J. Willis
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Patent number: 6153540Abstract: A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.Type: GrantFiled: March 4, 1998Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventors: Ishing Lou, Cary Ching, Peter W. Lee, Rong Pan, Paul Gee, Francimar Campana
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Patent number: 6152070Abstract: The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.Type: GrantFiled: November 18, 1996Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Jessica Barzilai, Hari K. Ponnekanti, W. N. (Nick) Taylor
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Patent number: 6153260Abstract: The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.Type: GrantFiled: April 11, 1997Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventors: Paul B. Comita, David K. Carlson, Norma B. Riley, Doria W. Fan, Rekha Ranganathan
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Patent number: 6152074Abstract: A multi-beam source for deposition of a material on to a substrate with enhanced deposition rate, uniformity and beam directionality. A plurality of orifices are provided in a head unit having a cavity containing a vapor of the deposition material. The cavity and the vapor contained therein are maintained at a high temperature to increase the deposition rate. The orifices are maintained at the same high temperature and act as heated collimators to produce highly directional beams for deposition of materials into high aspect ratio features. When used in jet vapor deposition techniques, an inert gas flow is introduced into the cavity and forced out thereof through the orifices as jets to transport particles of the deposition material to the substrate.Type: GrantFiled: August 1, 1997Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventors: Marc O. Schweitzer, Barry L. Chin, Ivo J. Raaijmakers
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Patent number: 6153530Abstract: Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture.Type: GrantFiled: March 16, 1999Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventors: Yan Ye, Xiaoye Zhao, Chang-Lin Hsieh, Xian-Can Deng, Wen-Chiang Tu, Chung-Fu Chu, Diana Xiaobing Ma
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Patent number: 6153261Abstract: A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.Type: GrantFiled: May 28, 1999Date of Patent: November 28, 2000Assignee: Applied Materials, Inc.Inventors: Li-Qun Xia, Ellie Yieh
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Patent number: 6149974Abstract: A method and apparatus for reducing surface sensitivity of a TEOS/O.sub.3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.Type: GrantFiled: May 5, 1997Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Bang C. Nguyen, Shankar Vankataranan, Ruby Liao, Peter W. Lee
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Patent number: 6149784Abstract: A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material such as cobalt or nickel. The grounded shield includes a slanted portion separated from the beveled periphery of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee According to one embodiment of the invention, the knee is located greater than 9 mm from the face of the target and at a radial position at least 1 mm inward of the outer periphery of the target face.Type: GrantFiled: October 22, 1999Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Jingang Su, Nelson A. Yee, John C. Forster, Kenny King-Tai Ngan, Lisa L. Yang
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Patent number: 6149776Abstract: The present invention generally provides an apparatus and a method for physical vapor deposition of a metal onto a substrate comprising a physical vapor deposition chamber and a target disposed in an upper portion of the chamber. The target comprises a backing plate having a central portion and a flange portion attachable to the physical vapor deposition chamber, a sputterable portion extending from the central portion of the backing plate, and an annular ridge disposed on a surface of the flange portion. Preferably, the sputterable portion of the target includes a restriction side wall that restricts entry of plasma and back-scattered particles into the dark space gap between an upper shield and the target.Type: GrantFiled: November 12, 1998Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Howard Tang, Imran Hashim, Richard Hong, Peijun Ding
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Patent number: 6149987Abstract: A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.Type: GrantFiled: April 7, 1998Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Dung-Ching Perng, Peter Wai-Man Lee, Thomas E. Deacon
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Patent number: 6148761Abstract: A multi-channel faceplate 200, that in some embodiments is monolithic, is provided as a portion of a gas delivery system to a process chamber 100. At least two sets of gas pathways are disposed through a faceplate and allow for independent delivery of separate gases into a process chamber 100. In one embodiment, a first gas pathway, which includes a first set of vertical channels 226, is formed through the faceplate 200. A second gas pathway includes a second set of vertical channels 228, which is formed through a portion of the faceplate and connected to a set of interconnecting horizontal channels 222 in the faceplate 200, where the second gas pathway maintains fluidic separation from the first gas pathway, prior to the gases entering the process chamber 100.Type: GrantFiled: December 9, 1998Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Robert Majewski, Yeh-Jen Kao, Yen Kun Wang
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Patent number: 6149777Abstract: An ion deposition sputtering process for producing a titanium nitride film having a resistivity less than about 70 .mu..OMEGA.-cm is disclosed, which comprises the steps of: (1) adjusting a percentage of ionization of a gas phase mixture to a predetermined range by adjusting the power to an ionization source; and (2) adjusting a deposition rate of said film on a substrate to a predetermined range so that a combination of said percentage of ionization of said deposition mixture and said deposition rate produces said film.Type: GrantFiled: January 25, 1999Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Kenny King-tai Ngan, Seshadri Ramaswami
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Patent number: 6149505Abstract: A chemical mechanical polishing system comprising a moving polishing pad and an ultrasonic conditioning head. The head is positioned in close facing relationship to the pad surface and agitates a liquid on the rotating pad surface at an appropriate frequency and sufficient amplitude to produce cavitation of the slurry in the vicinity of the pad surface. The action of cavitational collapse vigorously conditions the pad, driving out contaminants and re-texturizing the pad.Type: GrantFiled: August 4, 1999Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Kyle A. Brown, Boris Fishkin
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Patent number: 6151446Abstract: Apparatus and methods of thermally processing a substrate inside a processing chamber including a radiation source for heating the substrate are described. In one aspect, a detection system is configured to receive radiation from the substrate and to produce first and second detection system signals respectively representative of different first and second spectral portions of the received radiation. A processor is coupled to the detection system and configured to compute a measure of substrate temperature based upon the second detection system signal and to compute an indication of the relative accuracy of the computed measure of substrate temperature based upon the first detection system signal.Type: GrantFiled: July 6, 1999Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Aaron Hunter, Mark Yam, Abhilash J. Mayur
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Patent number: 6151203Abstract: A semiconductor wafer chuck for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system including a connector connecting DC chucking voltage and RF biasing power to an electrode embedded in the body of the chuck. The connector for the chuck includes two or more members joined by resilient banana connections. The connector may be adapted for use as a high temperature connector for an electrostatic chuck operated at an elevated temperature and such connector includes a thermal impedance for reducing the heat transferred from the chuck to the bottom of the connector.Type: GrantFiled: December 14, 1998Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, Ananda Kumar, Arnold Kholodenko, Dennis S. Grimard, Liang Guo Wang, Gerhard Schneider, Michael G. Chafin, Semyon Kats, Alexander Veytser, Senh Thach
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Patent number: 6150664Abstract: A method and apparatus for reducing lot to lot CD variation in semiconductor wafer processing feeds back information gathered during inspection of a wafer, such as after photoresist application, exposure and development, to upcoming lots that will be going through the photolithography process, and feeds forward information to adjust the next process the inspected wafer will undergo (e.g., the etch process). Embodiments include forming a feature such as an etch mask on a semiconductor wafer at a "photo cell" by a photolithography process, then conventionally imaging the feature with a CD-SEM to measure its CD and other sensitive parameters. The measured parameters are linked, via the feature's SEM waveform, to photolithography adjustable parameters such as stepper focus and exposure settings.Type: GrantFiled: June 29, 1999Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventor: Bo Su
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Patent number: 6148833Abstract: A sonic tank for cleaning substrates is provided. The tank has two or more upwardly angled walls. Arrays of one or more transducers are positioned along at least two of the two or more angled walls. The transducer arrays are alternately energized maintaining nearly 100% substrate surface cleaning at any given time, and 50% duty cycle (or less) for each transducer array. The substrate supports are positioned such that nearly every point along the substrate's surface is contacted by energy from at least one transducer, and transducer opposing walls are positioned to avoid interfering reflections therefrom.Type: GrantFiled: November 11, 1998Date of Patent: November 21, 2000Assignee: Applied Materials, Inc.Inventors: Jianshe Tang, Brian J. Brown, Boris Fishkin