Abstract: Apparatus for dissociating cleaning gas such as NF.sub.3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a base and a flexible membrane extending beneath the base to define a pressurizable chamber. The flexible membrane may be secured to the base, to a retaining ring surrounding the mounting surface, or to a support structure movably connected to the base by, for example, an adhesive, an O-ring seal, a sealant, or by fitting the membrane into a recess. A lower surface of the flexible membrane provides a mounting surface for a substrate.

Abstract: A copper via structure formed when copper and a small amount of an alloying metal such as magnesium or aluminum are cosputtered onto a substrate having oxide on at least a portion of its surface. Either the wafer is held at an elevated temperature during deposition or the sputtered film is annealed without the wafer being exposed to ambient. Due to the high temperature, the alloying metal diffuses to the surface. If a surface is exposed to a low partial pressure of oxygen or contacts silicon dioxide, the magnesium or aluminum forms a thin stable oxide but also extends into the oxide a distance of about 100 nm. The alloying metal oxide having a thickness of about 6 nm on the oxide sidewalls encapsulates the copper layer to provide a barrier against copper migration, to form an adhesion layer over silicon dioxide, and to act as a seed layer for the later growth of copper, for example, by electroplating.

Abstract: The present invention employs a plurality of small inductive antennas to generate a processing plasma. In one embodiment, small coil antennas are secured within the chamber so that both of the pole regions of the antennas couple power to the plasma. The antennas may be oriented so that poles regions are anywhere from perpendicular, to parallel to a chamber wall. The number, location, and orientation of the small antennas within the chamber may be selected to optimize plasma characteristics. In addition, the antennas may be secured to top, side, or bottom walls to improve plasma characteristics; and power deposition within the processing chamber may be adjusted by changing the orientation of the coils, and the magnitude and phase relationship of RF power through the individual antennas. Process gas may be selectively delivered to areas of high power deposition such as adjacent pole regions or through the center of a coil or loop antenna to control plasma characteristics.

Abstract: Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas.

Abstract: An substrate support pedestal having an RF contact assembly that utilizes a canted spring to make electrical connection to the cathode. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

Abstract: A wafer pedestal with a purge ring that circumscribes a peripheral edge of the wafer pedestal. The purge ring contains plurality of passages that are located proximate the peripheral edge of said wafer pedestal such that purge gas is directed towards the peripheral edge. Additionally, the purge ring cooperates with an edge ring assembly that circumscribes the purge ring. The purge ring and the edge ring assembly allow a dual-purge flow pattern to be established, which significantly reduces the accumulation of undesirable deposits upon the wafer pedestal.

Abstract: A chemical mechanical polishing apparatus includes a rotating plate on which a substrate is received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.

Abstract: An apparatus for processing substrates that is configured for a cleaning operation by loading a cleaning process wafer onto the susceptor before forming a cleaning plasma in the processing chamber. In one embodiment, a ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of the plasma, and spreads the plasma away from the susceptor during a cleaning operation, thus reducing damage to the susceptor. The plasma may be directed towards the walls of the chamber to reduce chamber cleaning time.

Abstract: An end effector is provided for conditioning pads used to polish semiconductor wafers. The end effector has a substrate with a matrix (preferably a polymer) disposed thereon. Abrasive particles such as diamond crystals are embedded in the matrix. Preferred particle size and number/spacing is provided for optimal conditioning. The particles are embedded by at least a predetermined amount (e.g., 75%) so as to provide uniform/repeatable conditioning while avoiding dislodged particles. The particles may be embedded such that the tips thereof are coplanar, or such that the profile of diamond tips form a plurality of curved regions. A method for checking end effector quality is also provided.

Abstract: A process chamber 15 for processing a semiconductor substrate comprising a support 20 for holding the substrate, a gas distributor 35 for distributing process gas into the process chamber, a gas energizer for energizing the process gas, and an exhaust 60 for exhausting process gas from the process chamber. The gas distributor 35 comprises monocrystalline material that provides increased erosion resistance and withstands high temperatures. Preferably, a thermal expansion isolator 115 supports the gas distributor 35 to allow portions of the gas distributor 35 to thermally expand different amounts. The gas distributor 35 can also comprise a transparent window 170 of solid material that transmits an light beam therethrough. Also, the gas distributor 35 can comprise a transparent portion facing the substrate 25 that allows light emissions from the energized gas to pass through without being reflected back onto the substrate.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane with a lip portion to engage a substrate to form a seal for improved vacuum-chucking.

Abstract: This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.

Abstract: The present invention generally provides a robot that can transfer two workpieces, such as silicon wafers, simultaneously and at increased speeds and accelerations and decelerations. More particularly, the present invention provides a robot wrist associated with the robot arm for mechanically clamping a workpiece to a workpiece handling member attached to the arm. The wafer clamp selectively applies sufficient force to hold the workpiece and prevent slippage and damage to the workpiece during rapid rotation and linear movement of the handling member. In one embodiment, a clamp for securing silicon wafers uses two clamp fingers connected to a single flexure member to position and hold the wafer with minimal particle generation and wafer damage. The clamp is designed so that wafers are normally clamped except near fall extension of the workpiece handling member to deliver or pick up a wafer.

Abstract: A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF.sub.6 and SiH.sub.4 are introduced into a deposition chamber. Next, the flow of WF.sub.6 and SiH.sub.4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF.sub.6 is reintroduced into the chamber along with H.sub.2 and B.sub.2 H.sub.6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Abstract: Accomodations for a magnetically levitated rotating system in an RTP chamber are provided. The system includes a magnetically permeable rotor; a cylindrical thin wall concentric with and surrounding the rotor; and a magnetic stator assembly adjacent the cylindrical thin wall. The radial distance between the rotor and the magnetic stator assembly is small enough that a magnetic field created by the stator assembly magnetically levitates the rotor but is great enough that the rotor does not physically contact the thin wall upon thermal expansion. The system is such that the relative positions of a plurality of sensors which determine the position of a rotating frame is maintained upon dismantling. Thermal isolation of the area including the rotor is accomplished from the reactive gases in a processing area of the RTP chamber. The rotor may be cooled by a number of cooling chambers formed within the chamber.

Abstract: An improved barrier layer structure for the prevention of migration within a semiconductor device can be formed from a refractory metal compound such as a refractory metal nitride. The preferred barrier layer structure includes at least two adjacent layers of essentially the same chemical composition having an essentially continuous interfacial region between them, wherein the interfacial region is at least 10 .ANG. thick. As an alternative to having a continuous interfacial region, a series of adjacent layers which provide sufficient interfacial regions can be used in combination to block the migration of mobile atoms such as silicon. When a series of layers is used, there should be at least 3 layers, and preferably 5 or more layers, where each layer is at least about 50 .ANG. thick. In addition, to break the continuity of channels passing through grain boundaries, alternating layers of substantially grain oriented, columnar microstructure and amorphous, non-columnar structure are preferred.