Abstract: A passive flow induced vibration reduction system for use in a temperature conditioning system that controls the temperature of at least one component within a lithographic apparatus. This FIV reduction system includes: a conduit that provides a flow path for a liquid through the system; a liquid filled cavity in fluid connection with the conduit, wherein the fluid connection is provided via one or more openings in the wall of the conduit; a membrane configured such that it separates the liquid in the liquid filled cavity from a gas at a substantially ambient pressure and the membrane is configured such that compliance of the membrane reduces at least low frequency flow induced vibrations in the liquid flowing through the conduit; and an end-stop located on the gas side of the membrane, wherein the end-stop is configured to limit an extent of deflection of the membrane.

Abstract: Systems, apparatuses, and methods are provided for manufacturing a substrate table. An example method can include forming a vacuum sheet including a plurality of vacuum connections and a plurality of recesses configured to receive a plurality of burls disposed on a core body for supporting an object such as a wafer. Optionally, at least one burl can be surrounded, partially or wholly, by a trench. The example method can further include using the vacuum sheet to mount the core body to an electrostatic sheet including a plurality of apertures configured to receive the plurality of burls. Optionally, the example method can include using the vacuum sheet to mount the core body to the electrostatic sheet such that the plurality of recesses of the vacuum sheet line up with the plurality of burls of the core body and the plurality of apertures of the electrostatic sheet.

Abstract: Disclosed herein is a residual gas analyser for detecting gas in a vacuum tool, the residual gas analyser comprising: one or more ion sources configured to ionise a gas in the residual gas analyser; one or more detectors configured to detect an ionised gas by the ion source; and one or more gas generating filaments configured to generate gas within the residual gas analyser.

Abstract: The invention provides a support with first and second end portions. The second end portion is on the side opposite to the first end portion in a longitudinal direction of the support. A coil spring is arranged between the first and second end portions. The coil spring comprises a first spiral member that extends between the first and second end portions in a circumferential direction of the support, and a second spiral member that extends between the first and second end portions in a circumferential direction of the support. The first and second spiral members extend in the longitudinal direction around a longitudinal axis of the support, wherein the first spiral member of the coil spring and the second spiral member of the coil spring are moveable relative to each other, and wherein the support further comprises a damper device that is attached to the first spiral member.

Abstract: Systems and methods are provided for evacuating a chamber 101. The evacuation system comprises a cooler 320 coupled with the chamber and a controller 350. The controller is configured to determine whether a property of the cooler or the chamber satisfies one or more conditions. Based on the determination that the property satisfies the one or more conditions, the controller is configured to isolate the cooler from the chamber or control the temperature of the cooler to increase at one or more rates. The controller is further configured to control one or more pumps 330,340 to pump the chamber to a base pressure value.

Abstract: A scatterometer for measuring a property of a target on a substrate includes a radiation source, a detector, and a processor. The radiation source produces a radiated spot on the target. The scatterometer adjusts a position of the radiated spot along a first direction across the target and along a second direction that is at an angle with respect to the first direction. The detector receives radiation scattered by the target. The received radiation is associated with positions of the radiated spot on the target along at least the first direction. The detector generates measurement signals based on the positions of the radiated spot on the target. The processor outputs, based on the measurement signals, a single value that is representative of the property of the target. The processor also combines the measurement signals to output a combined signal and derives, based on the combined signal, the single value.

Abstract: A method of operating a secondary imaging system of a charged particle beam apparatus may include using an anti-scanning mode. Excitation of a component of the secondary imaging system may be adjusted synchronously with a primary scanning deflection unit. Together with an anti-scanning deflection unit performing anti-scanning, a component of the secondary imaging system, such as a lens, may be adjusted in step. As scanning and anti-scanning is performed, excitation parameters of the component may also be constantly updated.

Abstract: The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

Abstract: An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

Abstract: A radiation source includes a fuel supply, a collector, a debris mitigation system, and a temperature control system. The fuel supply device supplies fuel. The excitation device excites the fuel into a plasma. The collector collects radiation emitted by the plasma and directs the radiation to a beam exit. The debris mitigation system collects debris generated by the plasma and has a first component having a first conduit passing therethrough and a second component having a second conduit passing therethrough. The temperature control system increases or decreases temperatures of the first component and the second component by selectively heating or cooling a thermal transfer fluid circulating through the respective conduit. The temperature control system cools the first component to a first temperature that is below the melting point of the fuel and heats the second component to a second temperature that is above the melting point of the fuel.

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

Abstract: A method for source mask optimization with a lithographic projection apparatus. The method includes determining a multi-variable source mask optimization function using a plurality of tunable design variables for an illumination system of the lithographic projection apparatus, a projection optics of the lithographic projection apparatus to image a mask design layout onto a substrate, and the mask design layout. The multi-variable source mask optimization function may account for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by a same slit position of the exposure apparatus. The method includes iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

Abstract: A method of determining representative patterns for training a machine learning model to predict optical proximity corrections. The method includes obtaining a design layout including a set of groups of patterns, each group of patterns includes one or more sub-groups; determining a set of representative patterns of the set of groups of patterns, a representative pattern being a sub-group whose instances appear in the set of groups of patterns; obtaining, via simulating an optical proximity correction process using the set of representative patterns, optical proximity correction data associated with the set of representative patterns; and training a machine learning model to predict optical proximity corrections for the design layout based on the set of representative patterns and the set of optical proximity correction data.

Abstract: Disclosed is a wavefront sensor for measuring a tilt of a wavefront at an array of locations across a beam of radiation, wherein said wavefront sensor comprises a film, for example of Zirconium, having an indent array comprising an indent at each of said array of locations, such that each indent of the indent array is operable to perform focusing of said radiation. Also disclosed is a radiation source and inspection apparatus comprising such a wavefront sensor.

Abstract: Disclosed is a phase modulator apparatus comprises at least a first phase modulator for modulating input radiation, and a metrology device comprising such a phase modulator apparatus. The first phase modulator comprises a first moving grating in at least an operational state for diffracting the input radiation and Doppler shifting the frequency of the diffracted radiation; and a first compensatory grating element comprising a pitch configured to compensate for wavelength dependent dispersion of at least one diffraction order of said diffracted radiation.

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

Abstract: A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. i.e., 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.