Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

Abstract: A patterning device cooling system for thermally conditioning a patterning device of a lithographic apparatus, wherein the patterning device in use, is being irradiated by exposure radiation, wherein the patterning device cooling system comprises: a thermal conditioner configured to thermally condition the patterning device; and a controller configured to control the thermal conditioner to thermally condition the patterning device dependent on an amount of the exposure radiation absorbed by the patterning device.

Abstract: Disclosed is a metrology sensor apparatus and associated method. The metrology sensor apparatus comprises an illumination system operable to illuminate a metrology mark on a substrate with illumination radiation having a first polarization state and an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark. The metrology mark comprises a main structure and changes, relative to the first polarization state, at least one of a polarization state of a first portion of the scattered radiation predominately resultant from scattering by the main structure and a polarization state of a second portion of radiation predominately resultant from scattering by one or more features other than the main structure, such that the polarization state of the first portion of the scattered radiation is different to the polarization state of the second portion of the scattered radiation.

Abstract: Methods and apparatus for in-situ incline cleaning an element disposed in a EUV generating chamber are disclosed. A capillary-based hydrogen radical generator is employed to form hydrogen radicals from hydrogen gas. The capillary-based hydrogen radical generator is resistively heated during operation and is oriented such that hydrogen radicals catalytically generated from the hydrogen gas are directed to a surface of the element to clean the surface.

Abstract: A system for an extreme ultraviolet (EUV) light source includes a light-generation system configured to emit one or more light beams onto a beam path; one or more optical amplifiers, each of the one or more amplifiers including a gain medium on the beam path, each gain medium being configured to amplify the one or more light beams to produce one or more amplified light beams; and one or more diffractive optical elements on the beam path, where each of the one or more diffractive optical elements has a plurality of focal lengths, and each focal length of the diffractive optical element is associated with a particular polarization state.

Abstract: A method including directing, by an optical system, an illumination beam to a surface of a substrate, providing relative motion between the directed illumination beam and the substrate until the directed illumination beam is illuminated on a grating underneath an edge or a notch of the substrate, diffracting, by the grating, at least a portion of the illumination beam, and detecting, by the detector, the diffracted illumination.

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

Abstract: Disclosed is a method of measuring a target, and a metrology apparatus. In one arrangement the target comprises a layered structure. The layered structure has a first target structure in a first layer and a second target structure in a second layer. The method comprises illuminating the target with measurement radiation using an illumination profile in the illumination pupil (u) that is offset from an imaginary line (IL) in the illumination pupil passing through the optical axis, to allow propagation to a detection region of the detection pupil of an allowed order (v2, v4) of a predetermined diffraction order while limiting propagation to the detection region of an equal and opposite order (v1?, v3?) of that predetermined diffraction order. Scattered radiation of plural double-diffracted allowed diffraction orders (w2, w4) is detected. A characteristic of the lithographic process is calculated using the detected scattered radiation of the predetermined diffraction orders.

Abstract: A moving property of a target is measured as the target travels toward a target space. The target including a component that emits light when converted to a plasma. A diagnostic probe system is interacted with a current target moving toward the target space. The interaction occurs prior to the current target entering the target space and after an immediately preceding target has interacted with a prior radiation pulse in the target space. First and second light that is produced at least in part from the interaction between the diagnostic probe system and the current target is detected prior to the current target entering the target space and after an immediately preceding target has interacted with the prior radiation pulse in the target space. One or more moving properties of the current target are determined based on an analysis of the detected first and second light.

Abstract: Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.

Abstract: Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing relative movement of the diffraction structure relative to the radiation beam from a first position wherein the radiation beam does not irradiate the diffraction structure to a second position wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining the intensity profile of the radiation beam based on the measured diffracted radiation signals.

Abstract: There is described an optical system (400) for focusing a beam of radiation (B) on a region of interest of a substrate in a metrology apparatus. The beam of radiation comprises radiation in a soft X-ray or Extreme Ultraviolet spectral range. The optical system comprises a first reflector system (410) and a second reflector system (412). Each of the first and second reflector systems (410, 412) comprises a finite-to-finite Wolter reflector system. The optical system (400) is configured to form, on the region of interest, a demagnified image (414) of an object (416) comprising an apparent source of the beam of radiation (B).

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.

Abstract: A porous member is used in a liquid removal system of an immersion lithographic projection apparatus to smooth uneven flows. A pressure differential across the porous member may be maintained at below the bubble point of the porous member so that a single-phase liquid flow is obtained. Alternatively, the porous member may be used to reduce unevenness in a two-phase flow.

Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.

Abstract: A lithographic apparatus includes a support table and a gas extraction system. The gas extraction system is configured to extract gas from a gap between the base surface of the support table and a substrate through at least one gas extraction opening when the substrate is being lowered onto the support table. The lithographic apparatus is configured such that gas is extracted from the gap at a first loading flow rate when the distance between the substrate and the support plane is greater than a threshold distance and gas is extracted from the gap at a second loading flow rate when the distance between the substrate and the support plane is less than the threshold distance, wherein the second loading flow rate is lower than the first loading flow rate.

Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.

Abstract: A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.