Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: A method comprising: evaluating a plurality of polarization characteristics associated with measurement of a metrology target of a substrate processed using a patterning process, against one or more measurement quality parameters; and selecting one or more polarization characteristics from the plurality of polarization characteristics based on one or more of the measurement quality parameters.

Abstract: The invention pertains to a stage system, and to a lithographic apparatus and a method for manufacturing a device in which a stage system is used. In the stage system a positioning system is provided comprising an actuator adapted to position an object table. The actuator comprises a magnet assembly and a coil assembly. The magnet assembly comprises a first magnetic body and a second magnetic body, which are in use subjected to a internal magnetic force. The magnet assembly has a separate interface for connecting each magnetic body to the object table separately. The magnet assembly further comprises a spacer device, which holds the first and second magnetic body at a relative distance to each other in at least the direction of the internal magnetic force.

Abstract: The invention relates to a cathode arrangement comprising: a thermionic cathode comprising an emission portion provided with an emission surface for emitting electrons, and a reservoir for holding a material, wherein the material, when heated, releases work function lowering particles that diffuse towards the emission portion and emanate at the emission surface at a first evaporation rate; a focusing electrode comprising a focusing surface for focusing the electrons emitted from the emission surface of the cathode; and an adjustable heat source configured for keeping the focusing surface at a temperature at which accumulation of work function lowering particles on the focusing surface is prevented.

Abstract: A fluid handling structure for a lithographic apparatus is disclosed, the fluid handling structure successively has, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: an elongate opening or a plurality of openings arranged in a first line that, in use, are directed towards a substrate and/or a substrate table configured to support the substrate; a gas knife device having an elongate aperture in a second line; and an elongate opening or a plurality of openings adjacent the gas knife device.

Abstract: In an immersion lithography apparatus in which immersion liquid is supplied to a localized space, the space is substantially polygonal in plan substantially parallel to the substrate. In an embodiment, two corners of the space have a radius of curvature no greater than the width of a transition zone between the space configured to contain liquid and a surrounding configured not to contain liquid.

Abstract: A method comprising illuminating a patterning device (MA?) comprising a plurality of patterned regions (15a-15c) of which each patterns a measurement beam (17a-17c), projecting, with a projection system (PL), the measurement beams onto a sensor apparatus (21) comprising a plurality of detector regions (25a-25c), making a first measurement of radiation when the patterning device and the sensor apparatus are positioned in a first relative configuration, moving at least one of the patterning device and the sensor apparatus so as to change the relative configuration of the patterning device to a second relative configuration, making a second measurement of radiation when the patterning device and the sensor apparatus are positioned in the second relative configuration in which at least some of the plurality of detector regions receive a different measurement beam to the measurement beam which was received at the respective detector region in the first relative configuration and determining aberrations caused by t

Abstract: A lithographic technique that involves obtaining values of parameters of a substrate deformation model, wherein the values are based on positional data obtained from an alignment system for a lithographic apparatus; modifying the values using a mapping operation, wherein the mapping operation is based on a correlation found between the parameters and overlay data for a previous set of substrates; and generating, based on the modified values, electronic data adapted to configure the lithographic apparatus.

Abstract: A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

Abstract: Methods for calibrating metrology apparatuses and determining a parameter of interest are disclosed. In one arrangement, training data is provided that comprises detected representations of scattered radiation detected by each of plural metrology apparatuses. An encoder encodes each detected representation to provide an encoded representation, and a decoder generates a synthetic detected representation from the respective encoded representation. A classifier estimates from which metrology apparatus originates each encoded representation or each synthetic detected representation. The training data is used to simultaneously perform, in an adversarial relationship relative to each other, a first machine learning process involving the encoder or decoder and a second machine learning process involving the classifier.

Abstract: A diagnostic apparatus monitors a lithographic manufacturing system. First measurement data representing local deviations of some characteristic across a substrate is obtained using sensors within a lithographic apparatus, and/or a separate metrology tool. Other inspection tools perform substrate backside inspection to produce second measurement data. A high-resolution backside defect image is processed into a form in which it can be compared with lower resolution information from the first measurement data. Cross-correlation is performed to identify which of the observed defects are correlated spatially with the deviations represented in the first measurement data. A correlation map is used to identify potentially relevant clusters of defects in the more detailed original defect map. The responsible apparatus can be identified by pattern recognition as part of an automated root cause analysis. Alternatively, reticle inspection data may be used as second measurement data.

Abstract: A method of and an apparatus for use in determining one or more alignment properties of an illumination beam of radiation emitted by a radiation source are provided. The illumination beam is for irradiating a target area on a substrate in a metrology apparatus. The method comprises: (a) obtaining a first set of intensity data; (b) obtaining a second set of intensity data; (c) processing said first and second sets of intensity data to determine said one or more alignment properties of said illumination beam of radiation; wherein said processing involves comparing said first and second sets of intensity data to calculate a value which is indicative of a translation of said illumination beam of radiation.

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract: The present invention provides a method for determining overlay. The method comprises obtaining an initial overlay estimate relating to a first set of targets and data about a second set of targets, wherein the data for a target comprises an intensity measurement of the target for each of a group of different wavelengths. The method further comprises using the initial overlay estimate to filter data relating to the second set of targets and using the filtered data to estimate overlay on the substrate.

Abstract: A liquid supply system for an immersion lithographic projection apparatus is disclosed in which a space is defined between the projection system, a barrier member and a substrate. The barrier member is not sealed such that, during use, immersion liquid is allowed to flow out the space and between the barrier member and the substrate.

Abstract: A method of determining a characteristic, such as optical response, of a physical system having a material structure, such as a thin-film multilayer stack or other optical system, has the steps: providing (1430) a neural network (1440) with its network architecture configured based on a model (1420) of scattering of radiation by the material structure along the radiation's path; training (1450) and using (1460) the neural network to determine the characteristic of the physical system. The network architecture may be configured based on the model by configuring parameters including number of units per hidden layer, number of hidden layers, layer interconnection and dropout.

Abstract: A system for cleaning a substrate support having a plurality of projections extending in a first direction each with a terminal surface arranged to be in contact with the substrate, the system including: a treatment tool arranged for relative movement in a second direction orthogonal to the first direction and a third direction orthogonal to the first and second directions over the terminal surfaces of the projections to remove matter from the substrate support; and a controller to control the treatment tool dependent upon a position in the second and third directions of the treatment tool relative to the substrate support such that the removal amount from each of the plurality of projections is maintained substantially constant from one projection to another.

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

Abstract: The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.