Abstract: A radiation source comprising: a fuel supply device configured to supply fuel; an excitation device configured to excite the fuel into a plasma; a collector configured to collect radiation emitted by the plasma and to direct the radiation to a beam exit; a debris mitigation system configured to collect debris generated by the plasma, the debris mitigation system having a component having a conduit passing therethrough; and a temperature control system configured to selectively increase or decrease the temperature of the component by selectively heating or cooling a thermal transfer fluid circulating through the conduit.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: The invention relates to support structure, comprising: a first body; a second body; a first support having a first stiffness; a second support having a second stiffness, wherein the second body supports the first body at a first location via the first support, wherein the second body supports the first body at a second location via the second support; a position measurement system arranged to generate a deformation signal representative of a difference of deformation of the first body and the second body relative to each other; a first actuator to apply a force between the first body and the second body at or near the first location; a second actuator to apply a force between the first body and the second and body at or near the second location; wherein the support structure comprises a controller arranged to determine a deformation compensation signal on the basis of the first stiffness, the second stiffness and the deformation signal and to drive at least one of the first actuator and the second actuator o

Abstract: Disclosed is a method and associated inspection apparatus for detecting variations on a surface of a substrate. The method comprises providing patterned inspection radiation to a surface of a substrate. The inspection radiation is patterned such that an amplitude of a corresponding enhanced field is modulated in a manner corresponding to the patterned inspection radiation. The scattered radiation resultant from interaction between the enhanced field and the substrate surface is received and variations on the surface of the substrate are detected based on the interaction between the enhanced field and the substrate surface. Also disclosed is a method of detecting any changes to at least one characteristic of received radiation, the said changes being induced by the generation of a surface plasmon at said surface of the optical element.

Abstract: A method for determining an overlay metric is disclosed comprising obtaining angle resolved distribution spectrum data relating to a measurement of the target structure comprising a symmetrical component. An overlay dependent contour of a feature of said target structure is determined from said angle resolved distribution spectrum data, from which an overlay metric is determined. The method comprises exposing an exposed feature onto a masked layer comprising a mask which defines masked and unmasked areas of the layer, such that a first portion of the exposed feature is exposed on a masked area of said layer and a second portion of the exposed feature is exposed on a non-masked area of said layer, the size of the first portion with respect to the second portion being overlay dependent; and performing an etch step to define an etched feature, the etched feature corresponding to said second portion of the exposed feature.

Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.

Abstract: A piezo-electric material is placed adjacent to the path of the radiation beam such that, when power is applied to the piezo-electric material it rotates into the path of the radiation beam to block it. A smaller and lighter radiation beam shutter therefore results.

Abstract: Disclosed is a high harmonic generation (HHG) radiation source which may be used to generate measurement radiation for an inspection apparatus. In such a radiation source, a pump radiation source is operable to emit pump radiation at a high harmonic generation gas medium thereby exciting the high harmonic generation gas medium within a pump radiation interaction region so as to generate the high harmonic radiation and an ionization radiation source is operable to emit ionization radiation at the high harmonic generation gas medium to ionize a gas at an ionization region between the pump radiation interaction region and an optical output of the illumination source.

Abstract: A method of controlling output of a radiation source, the method including: periodically monitoring an output energy of the radiation source; determining a difference between a reference energy signal and the monitored output energy; determining a feedback value; determining a desired output energy of the radiation source for a subsequent time period; and controlling an input parameter of the radiation source in dependence on the determined desired output energy during the subsequent time period. If the magnitude of the determined difference between the monitored output energy of the radiation source and the reference energy signal exceeds a threshold value: the determined difference does not contribute to the feedback value; and the determined difference is spread over the subsequent time period according to a reference energy signal adjustment profile and the reference energy signal adjustment profile is added to the reference energy signal for the subsequent time period.

Abstract: A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

Abstract: Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.

Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.

Abstract: A method including obtaining measurement results of a device manufacturing process or a product thereof, obtaining sets of one or more values of one or more parameters of a distribution by fitting the distribution against the measurement results, respectively, and obtaining, using a computer, a set of one or more values of one or more hyperparameters of a hyperdistribution by fitting the hyperdistribution against the sets of values of the parameters.

Abstract: Cabinet (10) for accommodating electronic equipment (46). The cabinet comprises a casing (12) with an access opening (24) at a access side (23), and a second side (17) opposite to the access side, an electronic equipment rack (40a), a first plenum space (35) between the access side and the rack, and a channel (36) in fluid communication with the second side and the first plenum space. The cabinet encloses a first cooling medium (27) that is in thermal communication with the electronic equipment. A cooling arrangement (29) is provided at the second side, which comprises a flow generator (30) for generating a flow (?f) of the first cooling medium from the first plenum space across the electronic equipment toward the second side, and a heat exchanger (31) for extracting heat from the first cooling medium. The first cooling medium is subsequently recirculated through the channel to the first plenum space.

Abstract: A route for a substrate support that supports a substrate in an immersion lithographic apparatus is calculated to satisfy the following constraints: after the edge of the substrate first contacts the immersion space, the substrate remains in contact with the immersion space until all target portions are exposed; exposures of target portions are performed while the substrate moves in a scan direction; and all movements of the substrate between exposures are, in a plane parallel to its upper surface, either curved or only in one of the scan directions or transverse directions. In order to reduce exposure defects at the edge of the substrate the outside portion of the substrate is avoided from being exposed to the immersion liquid. The transfer routes are designed to overly the substrate surface.

Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

Abstract: A method of reducing an aberration arising during operation of a lithographic apparatus, the method comprising measuring the aberration to obtain an aberration signal, the aberration signal comprising a first component and a second component, wherein the first component of the aberration signal comprises a first frequency band and the second component of the aberration signal comprises a second frequency band, wherein the first frequency band comprises frequencies that are higher than frequencies comprised in the second frequency band, calculating a correction, wherein a first part of the correction is calculated based on the first component of the aberration signal, and applying the correction to the lithographic apparatus.

Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.

Abstract: A method for quantifying the effect of pupil function variations on a lithographic effect within a lithographic apparatus is disclosed. The method comprises: determining a discrete, two-dimensional sensitivity map in a pupil plane of the lithographic apparatus, wherein the lithographic effect is given by the inner product of said sensitivity map with a discrete, two-dimensional pupil function variation map of a radiation beam in the pupil plane. The pupil plane of a lithographic apparatus generally refers to the exit pupil of a projection system of the lithographic apparatus. Pupil function variations may comprise: relative phase variations within the pupil plane and/or relative intensity variations within the pupil plane.

Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.