Abstract: A lithographic system including a lithographic apparatus with an anamorphic projection system, and a radiation source configured to generate an EUV radiation emitting plasma at a plasma formation location, the EUV radiation emitting plasma having an elongate form in a plane substantially perpendicular to an optical axis of the radiation source.

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

Abstract: A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

Abstract: A temperature conditioning system for a lithographic apparatus. Temperature variations in an object cause object deformation which prevents the object being accurately positioned. Temperature condition systems use conduit systems, provided with fluid, in or on the object to control the temperature of the object to reduce object deformation. In this way, parts of the object can be more accurately positioned. However, acceleration of the object and the temperature conditioning system induces variation in pressure within the fluid inside the conduit system on or in the object, which may also cause object deformation. To provide an improved conduit system, the lithographic apparatus further includes a control system which is used to control the movement of the object based on measurements indicating pressure variation in the conduit.

Abstract: A lithographic apparatus includes a support table and a gas extraction system. The gas extraction system is configured to extract gas from a gap between a base surface of the support table and a substrate through at least one gas extraction opening when the substrate is being lowered onto the support table. The lithographic apparatus is configured such that gas is extracted from the gap at a first loading flow rate when the distance between the substrate and the support plane is greater than a threshold distance and gas is extracted from the gap at a second loading flow rate when the distance between the substrate and the support plane is less than the threshold distance, wherein the second loading flow rate is lower than the first loading flow rate.

Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.

Abstract: A method of generating radiation for a lithography apparatus. The method comprises providing a continuously renewing fuel target (50) at a plasma formation location (12) and directing a continuous-wave excitation beam (6) at the plasma formation location such that fuel within the continuously renewing fuel target is excited by the continuous-wave excitation beam to a radiation generating plasma.

Abstract: A broadband spectroscopic analysis is used for controlling a distance (d) between a miniature solid immersion lens (SIL, 60) and a metrology target (30?). An objective lens arrangement (15, 60) including the SIL illuminates the metrology target with a beam of radiation with different wavelengths and collects a radiation (709) reflected or diffracted by the metrology target. A mounting (64) holds the SIL within a distance from the metrology target that is less than the coherence length of the illuminating radiation (703). A detection arrangement (812, 818) produces a spectrum of the radiation reflected or diffracted by the metrology target. The distance between the SIL and the metrology target or other target surface can be inferred from spectral shifts observed in the detected spectrum. Servo control of the distance is implemented based on these shifts, using an actuator (66).

Abstract: A method for compensating for an exposure error in an exposure process of a lithographic apparatus that comprises a substrate table, the method comprising: obtaining a dose measurement indicative of a dose of IR radiation that reaches substrate level, wherein the dose measurement can be used to calculate an amount of IR radiation absorbed by an object in the lithographic apparatus during an exposure process; and using the dose measurement to control the exposure process so as to compensate for an exposure error associated with the IR radiation absorbed by the object during the exposure process.

Abstract: A lithographic apparatus includes a number of sensors for measuring positions of features on a substrate prior to applying a pattern. Each sensor includes an imaging optical system. Position measurements are extracted from pixel data supplied by an image detector in each sensor. The imaging optical system includes one or more light field modulating elements and the processor processes the pixel data as a light-field image to extract the position measurements. The data processor may derive from each light-field image a focused image of a feature on the substrate, measuring positions of several features simultaneously, even though the substrate is not at the same level below all the sensors. The processor can also include corrections to reduce depth dependency of an apparent position of the feature include a viewpoint correction. The data processor can also derive measurements of heights of features on the substrate.

Abstract: A radiation collector comprising a first collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a first location at a distance from the radiation collector, a second collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a second location at said distance from the radiation collector, wherein the first location and the second location are separated from one another.

Abstract: Provided is a method and apparatus for moving and exchanging reticles within a vacuum lithographic system with minimum particle generation and outgassing. In an example of the method, a first arm of a rotational exchange device (RED) receives a first baseplate holding a first reticle. A second arm of the RED supports and buffers a second baseplate. The first and second baseplates are located substantially equidistant from an axis of rotation of the RED.

Abstract: A position control system includes a position measurement system including a first position measurement configuration arranged to determine a position of an object in a first operating area and a second position measurement configuration to determine a position of the object in a second operating area; and a control unit configured to control a position of the object, the control unit including a first and a second controller, the first and second controllers being arranged to convert an input signal representing a position of the object to a respectively first and second control signal, the control unit being arranged to determine a combined control signal for controlling the position of the object in an overlapping area of the first and second operating area, wherein the combined control signal is obtained by applying a continuous weight function to the first and second control signal.

Abstract: In a laser produced plasma (LPP) extreme ultraviolet (EUV) system, a plasma created from droplets irradiated by a laser pulse can become destabilized. The instability of the plasma can reduce the amount of EUV energy generated over time. While other systems seek to stabilize the plasma by varying a pulse width of the laser pulses, the systems and methods described herein stabilize the plasma by varying an intensity of the laser pulses. The intensity of the laser pulses is varied based on a comparison of the amount of EUV energy generated from current pulse to an expected amount of EUV energy. The intensity of the laser pulses can be varied on a pulse-by-pulse basis by an EUV controller that instructs a pulse actuator.

Abstract: A lithographic apparatus includes an optical sensor, a movable body, a support, a deflector system, a first drive system and a second drive system. The movable body is moveable relative to the sensor. The support is for holding the sensor. The first drive system is arranged to move the movable body relative to the sensor. The second drive system is arranged to move the first drive system relative to the sensor. The second drive system is arranged to move the deflector system relative to the sensor. A disturbance is induced by a movement of the movable body. The deflector system is arranged to create a deflecting area for reflecting the disturbance away from the support.

Abstract: Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between the first periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.

Abstract: A support device configured to support a first part relative to a second part, minimizing the transfer of vibration between the two parts, includes a supporting system configured to use gas under pressure to provide a support force between the first and second parts; a gas chamber connected to the supporting system and configured to contain the gas under pressure and provide the gas under pressure to the supporting system; and a section of acoustic damping material, arranged at a location within the gas chamber so as to separate a first gas containing region and a second gas containing region within the gas chamber, wherein the section of acoustic damping material has a first side and a second side, wherein the first gas containing region is on the first side and the second gas containing region is on the second side.

Abstract: Diffraction models and scatterometry are used to reconstruct a model of a microscopic structure on a substrate. A plurality of candidate structures are defined, each represented by a plurality of parameters (p1, p2, etc.)). A plurality of model diffraction signals are calculated by simulating illumination of each of the candidate structures. The structure is reconstructed by fitting one or more of the model diffraction signals to a signal detected from the structure. In the generation of the candidate structures, a model recipe is used in which parameters are designated as either fixed or variable. Among the variable parameters, certain parameters are constrained to vary together in accordance with certain constraints, such as linear constraints. An optimized set of constraints, and therefore an optimized model recipe, is determined by reference to a user input designating one or more parameters of interest for a measurement, and by simulating the reconstruction process reconstruction.