Abstract: In an illumination system (12, 13) for a scatterometer, first and second spatial light modulators lie in a common plane and are formed by different portions of a single liquid crystal cell (260). Pre-polarizers (250) apply polarization to first and second radiation prior to the spatial light modulators. A first spatial light modulator (236-S) varies a polarization state of the first radiation in accordance with a first programmable pattern. Second spatial light modulator (236-P) varies a polarization state of the second radiation accordance with a second programmable pattern. A polarizing beam splitter (234) selectively transmits each of the spatially modulated first and second radiation to a common output path, depending on the polarization state of the radiation. In an embodiment, functions of pre-polarizers are performed by the polarizing beam splitter.

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate, the method comprising the steps: (a) receiving a substrate comprising first and second structures produced using the lithographic process; (b) detecting scattered radiation while illuminating the first structure with radiation to obtain a first scatterometer signal; (c) detecting scattered radiation while illuminating the second structure with radiation to obtain a second scatterometer signal; (d) using the first and second scatterometer signals to determine an exposure dose value used to produce said first and second structures wherein the first structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose and the second structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with sp

Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to tools for co-optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention enables full chip pattern coverage while lowering the computation cost by intelligently selecting a small set of critical design patterns from the full set of clips to be used in source and mask optimization. Optimization is performed only on these selected patterns to obtain an optimized source. The optimized source is then used to optimize the mask (e.g. using OPC and manufacturability verification) for the full chip, and the process window performance results are compared. If the results are comparable to conventional full-chip SMO, the process ends, otherwise various methods are provided for iteratively converging on the successful result.

Abstract: A radiation collector comprising a first collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a first location at a distance from the radiation collector, a second collector segment comprising a plurality of grazing incidence reflector shells configured to direct radiation to converge in a second location at said distance from the radiation collector, wherein the first location and the second location are separated from one another.

Abstract: An immersion lithographic apparatus is provided with a liquid confinement structure which defines at least in part a space configured to contain liquid between the projection system and the substrate. In order to reduce the crossing of the edge of the substrate which is being imaged (which can lead to inclusion of bubbles in the immersion liquid), the cross-sectional area of the space in a plane parallel to the substrate is made as small as possible. The smallest theoretical size is the size of the target portion which is imaged by the projection system. In an embodiment, the shape of a final element of the projection system is also changed to have a similar size and/or shape in a cross-section parallel to the substrate to that of the target portion.

Abstract: In an embodiment, a lithographic projection apparatus has an off-axis image field and a concave refractive lens as the final element of the projection system. The concave lens can be cut-away in parts not used optically to prevent bubbles from being trapped under the lens.

Abstract: The overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined.

Abstract: A method of manufacturing an object holder for use in a lithographic apparatus, the object holder including one or more electrically functional components, the method including: using a composite structure including a carrier sheet different from a main body of the object holder and a layered structure including one or a plurality of layers and formed on the carrier sheet; connecting the composite structure to a surface of the main body such that the layered structure is between the carrier sheet and the surface of the main body; and removing the carrier sheet from the composite structure, leaving the layered structure connected to the main body.

Abstract: Energy output from a laser-produced plasma (LPP) extreme ultraviolet light (EUV) system varies based on how well the laser beam is focused on droplets of target material to generate plasma at a primary focal spot. Maintaining droplets at the primary focal spot during burst firing is difficult because generated plasma from preceding droplets push succeeding droplets out of the primary focal spot. Current droplet-to-droplet feedback control to re-align droplets to the primary focal spot is relatively slow. The system and method described herein adaptively pre-compensate for droplet push-out by directing droplets to a target position that is offset from the primary focal spot such that when a droplet is lased, the droplet is pushed by the laser beam into the primary focal spot to generate plasma. Over time, the EUV system learns to maintain real-time alignment of droplet position so plasma is generated consistently within the primary focal spot.

Abstract: In a laser-produced plasma (LPP) extreme ultraviolet (EUV) system, laser pulses are used to produce EUV light. To determine the energy of individual laser pulses, a photoelectromagnetic (PEM) detector is calibrated to a power meter using a calibration coefficient. When measuring a unitary laser beam comprising pulses of a single wavelength, the calibration coefficient is calculated based on a burst of the pulses. A combined laser beam has main pulses of a first wavelength alternating with pre-pulses pulses of a second wavelength. To calculate the energy of the main pulses in the combined laser beam, the calibration coefficient calculated for a unitary laser beam of the main pulses is used. To calculate the energy of the pre-pulses in the combined laser beam, a new calibration coefficient is calculated. When the calculated energy values drift beyond a pre-defined threshold, the calibration coefficients are recalculated.

Abstract: In a laser-produced plasma (LPP) extreme ultraviolet (EUV) system, laser pulses are used to produce EUV light. To determine the energy of individual laser pulses, a photoelectromagnetic (PEM) detector is calibrated to a power meter using a calibration coefficient. When measuring a unitary laser beam comprising pulses of a single wavelength, the calibration coefficient is calculated based on a burst of the pulses. A combined laser beam has main pulses of a first wavelength alternating with pre-pulses pulses of a second wavelength. To calculate the energy of the main pulses in the combined laser beam, the calibration coefficient calculated for a unitary laser beam of the main pulses is used. To calculate the energy of the pre-pulses in the combined laser beam, a new calibration coefficient is calculated. When the calculated energy values drift beyond a pre-defined threshold, the calibration coefficients are recalculated.

Abstract: A method and apparatus for improved control of the trajectory and timing of droplets of target material in a laser produced plasma (LPP) extreme ultraviolet (EUV) light system is disclosed. A droplet illumination module generates two laser curtains for detecting the droplets. The first curtain is used for detecting the position of the droplets relative to a desired trajectory to the irradiation site so that the position of a droplet generator may be adjusted to direct the droplets to the irradiation site, as in the prior art. A droplet detection module detects each droplet as it passes through the second curtain, determines when the source laser should generate a pulse so that the pulse arrives at the irradiation site at the same time as the droplet, and sends a signal to the source laser to fire at the correct time.

Abstract: Disclosed is a reflector apparatus comprising a reflector and an array of thermoelectric heat pumps each having a first end proximal to and in thermal contact with the reflector and having a second end distal from the reflector, a lithography tool having such a reflector apparatus, and a method of using the same.

Abstract: Inspection apparatus (100) is used for measuring parameters of targets on a substrate. Coherent radiation follows an illumination path (solid rays) for illuminating target (T). A collection path (dashed rays) collects diffracted radiation from the target and delivers it to a lock-in image detector (112). A reference beam following a reference path (dotted rays). An acousto-optical modulator (108) shifts the optical frequency of the reference beam so that the intensity of radiation at the lock-in detector includes a time-varying component having a characteristic frequency corresponding to a difference between the frequencies of the diffracted radiation and the reference radiation. The lock-in image detector records two-dimensional image information representing both amplitude and phase of the time-varying component. A second reference beam with a different shift (110) follows a second reference path (dot-dash rays). Interference between the two reference beams can be used for intensity normalization.

Abstract: A method of manufacturing a multi-layer mirror comprising a multi-layer stack of pairs of alternating layers of a first material and silicon, the method comprising depositing a stack of pairs of alternating layers of the first material and layers of silicon, the stack being supported by a substrate and doping at least a first layer of the first material with a dopant material.

Abstract: A lithographic projection apparatus is disclosed that includes a table, a shutter member, a fluid handling structure, and a fluid extraction system. The fluid handling structure may be configured to supply and confine liquid between a projection system and (i) a substrate, or (ii) the table, or (iii) a surface of the shutter member, or (iv) a combination selected from (i)-(iii). The surface of the shutter member may adjoin and be co-planar with a surface of the table. The surfaces of the shutter member and the table may be spaced apart by a gap. The fluid extraction system may be configured to remove liquid from the gap.

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract: A lithographic apparatus having an optical column capable of projecting a beam on a target portion on a substrate held by the substrate support. The optical column may have a self-emissive contrast device to emit the beam. The optical column may include a projection system to project the beam onto the target portion. The target portion has a height in a scanning direction of the substrate and a tangential width mainly perpendicular to the scanning direction, wherein a scanning speed of the substrate in the scanning direction divided by the height substantially corresponds with a rotating speed of the optical column or a part thereof divided by the tangential width of the target portion.

Abstract: Described herein is a method for simulating a three-dimensional spatial intensity distribution of radiation formed within a resist layer on a substrate resulting from an incident radiation, the method comprising: calculating an incoherent sum of forward propagating radiation in the resist layer and backward propagating radiation in the resist layer; calculating an interference of the forward propagating radiation in the resist layer and the backward propagating radiation in the resist layer; and calculating the three-dimensional spatial intensity distribution of radiation from the incoherent sum and the interference.

Abstract: An inspection apparatus measures a property of a substrate including a periodic structure. An illumination system provides a beam of radiation with an illumination profile including a plurality of illuminated portions. A radiation projector projects the beam of radiation onto the substrate. A detector detects radiation scattered from the periodic structure and separately detects first order diffracted radiation and at least one higher order of diffracted radiation of each of the illuminated portions. A processor determines the property of the substrate from the detected radiation. The plurality of illuminated portions are arranged such that first order diffracted radiation arising from one or more of the illuminated portions are not overlapped by zeroth order or first order diffracted radiation arising from any other of the illuminated portions.