Abstract: An electrostatic clamp (12) comprising an electrode (2), a layer of resistive material (6) located on the electrode, and a layer of dielectric (8) located on the resistive material, wherein the electrostatic clamp further comprises burls (10) which project from the layer of dielectric.

Abstract: A lithographic apparatus having an optical column capable of creating a pattern on a target portion of a substrate is disclosed. The optical column may have a self-emissive contrast device configured to emit a beam, and a projection system configured to project the beam onto the target portion. The apparatus may also have an actuator to move the optical column or a part thereof with respect to the substrate. The apparatus may be constructed to reduce the optical effect of density variation in a medium around the moving part of the optical column on the beam.

Abstract: A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.

Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: Disclosed herein is a computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus, the method comprising defining a multi-variable cost function, the multi-variable cost function being a function of a stochastic effect of the lithographic process.

Abstract: An immersion lithographic apparatus typically includes a fluid handling system. The fluid handling system generally has a two-phase fluid extraction system configured to remove a mixture of gas and liquid from a given location. Because the extraction fluid comprises two phases, the pressure in the extraction system can vary. This pressure variation can be passed through the immersion liquid and cause inaccuracy in the exposure. To reduce the pressure fluctuation in the extraction system, a buffer chamber may be used. This buffer chamber may be connected to the fluid extraction system in order to provide a volume of gas which reduces pressure fluctuation. Alternatively or additionally, a flexible wall may be provided somewhere in the fluid extraction system. The flexible wall may change shape in response to a pressure change in the fluid extraction system. By changing shape, the flexible wall can help to reduce, or eliminate, the pressure fluctuation.

Abstract: In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be exposed to radiation when immersed in liquid (e.g., under the same conditions as the substrate will be exposed to radiation). By having a surface of an absorption element of the sensor, that is to be in contact with liquid, formed of no more than one metal type, long life of the sensor may be obtained.

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

Abstract: An immersion lithographic apparatus is disclosed in which at least a part of the liquid supply system (which provides liquid between the projection system and the substrate) is moveable in a plane substantially parallel to a top surface of the substrate during scanning. The part is moved to reduce the relative velocity between that part and the substrate so that the speed at which the substrate may be moved relative to the projection system may be increased.

Abstract: A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.

Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of a mark including a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot which scans said structure. Multiple position-dependent signals are detected in a detection optical system and processed to obtain multiple candidate position measurements. Each mark includes sub-structures of a size smaller than a resolution of the optical system. Each mark is formed with a positional offset between the sub-structures and larger structures that is a combination of both known and unknown components. A measured position of at least one mark is calculated using signals from a pair of marks, together with information on differences between the known offsets, in order to correct for said unknown component of said positional offset.

Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

Abstract: A lithographic apparatus includes a radiation source configured to produce extreme ultraviolet radiation, the radiation source including a chamber in which a plasma is generated; a collector mirror configured to reflect radiation emitted by the plasma; and a debris mitigation system including a gas supply system configured to supply a first gas flow toward the plasma, the first gas flow being selected to thermalize debris generated by the plasma, and a plurality of gas manifolds arranged at a location proximate the collector mirror, the gas manifolds configured to supply a second gas flow in the chamber, the second gas flow being directed toward the plasma to prevent thermalized debris from depositing on the collector mirror.

Abstract: A lithographic apparatus includes a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a measurement system with a measurement radiation system to provide a measurement beam of radiation, at least two reflectors to reflect a portion of the measurement beam between the reflectors; and a detector to detect a wavelength of at least a portion of the measurement beam transmitted through one of the reflectors.

Abstract: An extreme ultraviolet light system includes an optical amplifier system and a catalytic conversion system. Each optical amplifier of the optical amplifier system includes a gain medium in the form of a gas mixture that produces an amplified light beam. The optical amplifier system includes a fluid input and a fluid output through which the gas mixture flows. The catalytic conversion system is fluidly connected to the fluid output of the optical amplifier system and to the fluid input of the optical amplifier system. The catalytic conversion system includes a catalytic converter that includes a housing; a substrate within the housing including openings through which the gas mixture can flow; and a catalyst applied as a coating to the interior surfaces of the openings of the substrate, the catalyst including particles of metal. The particles of metal can be nanoparticles of precious metal.

Abstract: A substrate table of an immersion lithographic apparatus is disclosed which comprises a barrier configured to collect liquid. The barrier surrounds the substrate and is spaced apart from the substrate. In this way any liquid which is spilt from the liquid supply system can be collected to reduce the risk of contamination of delicate components of the lithographic projection apparatus.

Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.

Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., ?d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

Abstract: A method for depositing a protective layer of material on a localized area on a substrate, such as a pattern of photo resist, includes forming a controlled environment around the substrate and positioning a hollow needle adjacent to the localized area on the substrate. A liquid comprising the material is directed through the hollow needle onto the localized area, so as to deposit a layer of the material on the localized area. The layer of material may act as a Z-contrast forming layer in TEM.