Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: An apparatus, in an embodiment, having a patterning device support including a first planar element having a first flow-restricting surface; a second planar element including a second flow-restricting surface facing the first flow-restricting surface; a support driver to linearly move the support along a certain direction relative to the second planar element, wherein the first and/or second flow-restricting surface has one or more projections and/or recesses between the first and second flow-restricting surfaces, and wherein the projection and/or recess on the first and/or second flow-restricting surface is arranged to provide a flow resistance, per unit width of the first and/or second flow-restricting surface perpendicular to the flow, that is lower against flow that is parallel to the certain direction than against flow that is perpendicular to the certain direction. The flow-restricting surfaces may direct gas flow onto a driver part that generates heat.

Abstract: A lithographic apparatus includes a first table to support a substrate; a second table, not being configured to support a substrate, including a sensor unit to sense a property of a patterned beam of radiation from a projection system, the second table to move under the projection system when the first table is moved out from under the projection system during a substrate exchange, the first and second tables being independently movable from each other; and a liquid supply system to supply a liquid to a space between the projection system and the substrate, the first table, and/or the second table, wherein the second table is configured to provide a confining surface at a bottom of a liquid confinement structure when the first table is removed from under the projection system so as to prevent the liquid from leaking out into the remainder of the lithographic apparatus.

Abstract: A system detects targets located within patterns. It operates in the pupil plane by filtering the received signal from the surrounding pattern. A method includes illuminating a target and a surrounding pattern with radiation, detecting the radiation reflected by the target and the surrounding pattern and forming a first set of data based on the detected radiation, removing portions of the first set of data which correspond to the target to form reduced data, interpolating the remaining portions of the reduced data over the removed portions to form product data, and subtracting the product data from the first set of data to form target data.

Abstract: There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.

Abstract: A system for controlling temperature of a patterning device in a lithographic apparatus is discussed. The system includes a cooling system and a heating system. The cooling system is configured to direct a gas flow along a first direction across a surface of the patterning device to remove heat from the patterning device prior to exposing the patterning device or during exposure of the patterning device. The heating system is configured to selectively heat areas on the surface of the patterning device prior to exposing the patterning device or during exposure of the patterning device. The selective heating and the heat removal achieve a substantially uniform temperature distribution in the patterning.

Abstract: A collector mirror of an extreme ultraviolet light source is cleaned by removing the collector mirror from a chamber of the extreme ultraviolet light source; mounting the collector mirror to a carrier; inserting the carrier with the collector mirror into a cleaning tank; applying a cleaning agent to a reflective surface of the collector mirror by spraying the cleaning agent through a plurality of nozzles directed toward the collector mirror reflective surface until the collector mirror reflective surface is clean; rinsing the applied cleaning agent from the collector mirror reflective surface; and drying the collector mirror reflective surface.

Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.

Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter for a metrology target design to an optical aberration, determining the parameter for a product design exposed using an optical system of a lithographic apparatus, and determining an impact on the parameter of the metrology target design based on the parameter for the product design and the product of the sensitivity and one or more of the respective aberrations of the optical system.

Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.

Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

Abstract: A method of metrology target design is described. The method includes providing a range or a plurality of values for design parameter of a metrology target and by a processor, selecting, by solving for and/or sampling within the range or the plurality of values for the design parameters, a plurality of metrology target designs having one or more design parameters meeting a constraint for a design parameter of the metrology target.

Abstract: A system and method for calibrating system parameters of a lithography apparatus is disclosed. The system includes a measurement device configured to measure an overlay error between patterns formed on a substrate during different exposures and a processing device configured to determine a model representative of a relationship between the overlay error and a system parameter error based on the measured overlay error. The method includes measuring an overlay error between patterns formed at different exposures with the substrate positioned at different orientations during each of the different exposures. The method further includes determining a model representative of a relationship between the overlay error and a system parameter error based on the measured overlay error and deriving a calibration correction factor from the model.

Abstract: A fluid handling structure for a lithographic apparatus, the fluid handling structure having, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: a meniscus pinning feature to resist passage of immersion fluid in a radially outward direction from the space; a plurality of gas supply openings in a linear array at least partly surrounding and radially outward of the meniscus pinning feature; and a gas recovery opening radially outward of the plurality of gas supply openings in a linear array.

Abstract: A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s).

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract: Devices are described herein which may comprise an optic having a non-planar surface, the non-planar surface having an optically active portion; and a flow guide directing gas upon the non-planar surface to produce turbulent flow on at least a portion of the optically active portion of the non-planar surface to cool the optic.

Abstract: A lithographic apparatus has a support structure configured to support a patterning device, the patterning device serving to pattern a radiation beam according to a desired pattern and having a planar main surface through which the radiation beam passes; an outlet opening configured to direct a flow of a gas onto the patterning device; and an inlet opening configured to extract the gas which has exited the outlet opening, wherein the outlet opening and inlet opening are in a facing surface facing the planar main surface of the patterning device.

Abstract: In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.

Abstract: The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.