Abstract: There is provided a positioning system for positioning an object in a lithographic apparatus. The positioning system includes a support, a position measurement device, a deformation sensor and a processor. The support is constructed to hold the object. The position measurement device is configured to measure a position of the support. The position measurement device includes at least one position sensor target and a plurality of position sensors to cooperate with the at least one position sensor target to provide a redundant set of position signals representing the position of the support. The deformation sensor is arranged to provide a deformation signal representing a deformation of one of the support and the position measurement device. The processor is configured to calibrate one of the position measurement device and the deformation sensor based on the deformation signal and the redundant set of position signals.

Abstract: A substrate table for an immersion lithographic apparatus is disclosed having a recess, configured to receive a substrate of a given size, and a fluid extraction system, configured to extract fluid from a gap between the edge of the substrate and the edge of the recess, the fluid extraction system configured such that the rate of flow of fluid extracted from a localized section of the gap is greater than the rate of flow of fluid extracted from another section of the gap.

Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a projection system configured to project the patterned beam onto a target portion of a substrate; a substrate table configured to hold the substrate, the substrate table including a support surface configured to support an intermediary plate between the projection system and at least one of the substrate and an object positioned on the substrate table and not in contact with the at least one of the substrate and the object; and a liquid supply system configured to provide a liquid, through which the beam is to be projected, in a space between the projection system and the at least one of the substrate and the object.

Abstract: A lithographic projection apparatus is disclosed where at least part of a space between a projection system of the apparatus and a substrate is filled with a liquid by a liquid supply system. The projection system is separated into two separate physical parts. With substantially no direct connection between the two parts of the projection system, vibrations induced in a first of the two parts by coupling of forces through the liquid filling the space when the substrate moves relative to the liquid supply system affects substantially only the first part of the projection system and not the other second part.

Abstract: In a lithographic apparatus, an illumination mode is set using a field mirror that includes a plurality of movable facets to direct radiation to selectable positions on a pupil facet mirror. A base illumination mode is selected from a set of predetermined illumination modes and the movable facets are set to effect that mode. In order to adjust an imaging parameter, a fraction of the movable facets are set to different positions. The determination of which facets to set to different positions is based on summing the effects of setting each facet to a different position.

Abstract: Methods, computer program products and apparatuses for optimizing design rules for producing a mask are disclosed, while keeping the optical conditions (including but not limited to illumination shape, projection optics numerical aperture (NA) etc.) fixed. A cross-correlation function is created by multiplying the diffraction order functions of the mask patterns with the eigenfunctions from singular value decomposition (SVD) of a TCC matrix. The diffraction order functions are calculated for the original design rule set, i.e., using the unperturbed condition. ILS is calculated at an edge of a calculated image of a critical polygon using the cross-correlation results and using translation properties of a Fourier transform. Once an optimum separation is calculated, it is incorporated into the design rule to optimize the mask layout for improved ILS throughout the mask.

Abstract: A support structure for supporting an exchangeable object in a lithographic exposure apparatus includes a first support structure part and a second support structure part, the first support structure part being arranged to support the object, and the second support structure part being arranged to, at least in part, support the first support structure part. At least one of the first support structure part and the second support structure part has an open-box structure. The first support structure part and the second support structure part are configured to be attached to one another in such a way that the first support structure part and the second support structure together form a closed-box structure.

Abstract: A displacement device with a first and second part which are displaceable relative to one another, the first part being provided with a system of magnets, the second part being provided with a set of coil block units including: at least three first coil block units having current conductors oriented parallel to a second direction, at least two second coil block units having current conductors oriented parallel to a first direction, wherein the displacement device includes a controller configured to control the position of the second part relative to the first part, and wherein when the second part mainly moves in the second direction the controller is configured to levitate the second part from the first part in the third direction by using first coil block units only.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: A substrate table system includes a substrate table and a dual directional motor for moving the substrate table in a plane of movement that is defined by a first direction and a second direction. The dual directional motor includes: a first pusher structure extending in the first direction, the substrate table being movable in respect of the first pusher structure, the first pusher structure and the substrate table being arranged to cooperate to form a first motor to exert a force between the first pusher structure and the substrate table in the first direction; and a second pusher structure extending in the first direction, the substrate table being movable in respect of the second pusher structure, the second pusher structure and the substrate table to cooperate to form a second motor to exert a force between the second pusher structure and the substrate table in the second direction.

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

Abstract: An alignment measurement system measures an alignment target on an object. A measurement illuminates the target and is reflected. The reflected measurement beam is split and its parts are differently polarized. A detector receives the reflected measurement beam. A processing unit determines alignment on the basis of the measurement beam received by the detector. An alternative arrangement utilizes an optical dispersive fiber to guide a multi-wavelength measurement beam reflected from the object to a detector.

Abstract: A multilayer mirror constructed to reflect radiation having a wavelength in the range of 6.4 nm to 7.2 nm. The multilayer mirror has alternating layers, including a first layer and a second layer. The first and second layers are selected from the group consisting of: U, or a compound or nitride thereof, and B4C layers; Th, or a compound or nitride thereof, and B4C layers; La, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B4C layers; U, or a compound or nitride thereof, and B9C layers; Th, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B layers; U, or a compound or nitride thereof, and B layers; C, or a compound or nitride thereof, and B layers; Th, or a compound or nitride thereof, and B layers.

Abstract: An imprint lithography template is provided with an alignment mark, wherein the alignment mark is formed from dielectric material having a refractive index which differs from the refractive index of the imprint lithography template, the dielectric material having a thickness which is such that it provides a phase difference between alignment radiation which has passed through the dielectric material and alignment radiation which has not passed through the dielectric material.

Abstract: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table including a substrate holder constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the substrate table is constructed and arranged to reduce or eliminate slip and hysteresis in position and orientation between the substrate table and the substrate holder.

Abstract: A lithographic apparatus having an optical column capable of creating a pattern on a target portion of the substrate. The optical column may be provided with a self-emissive contrast device configured to emit a beam and a projection system configured to project the beam onto the target portion. The apparatus may be provided with an actuator to move the optical column or a part thereof with respect to the substrate. An optical sensor device is provided which is movable in respect of the optical columns and has a range of movement which enables the optical sensor device to move through a projection area of each of the optical columns to measure a beam of each of the optical columns.

Abstract: According to an aspect of the present invention, a spectral purity filter includes an aperture, the aperture being arranged to diffract a first wavelength of radiation and to allow at least a portion of a second wavelength of radiation to be transmitted through the aperture, the second wavelength of radiation being shorter than the first wavelength of radiation, wherein the aperture has a diameter greater than 20 ?m.

Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.

Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.