Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.
Type:
Grant
Filed:
October 15, 2012
Date of Patent:
May 21, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
William S. Wong, Been-Der Chen, Yen-Wen Lu, Jiangwei Li, Tatsuo Nishibe
Abstract: A lithographic apparatus is disclosed that includes a conduit for two phase flow therethrough. A flow separator is provided to separate the two phase flow into a gas flow and a liquid flow. A flow meter measures the flow rate of fluid in the gas flow or the liquid flow.
Type:
Grant
Filed:
June 22, 2010
Date of Patent:
May 21, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Pieter Jacob Kramer, Antonius Johannus Van Der Net, Erik Henricus Egidius Catharina Eummelen, Anthonie Kuijper
Abstract: The invention relates to a method of loading a first object on a second object in a lithographic apparatus. The method includes: a) loading the first object on the second object, b) waiting a predetermined time interval and c) performing a relaxation action. The first object may be a substrate and the second object a substrate table. The first object may also be a substrate table and the second object a support structure, supporting the substrate table.
Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.
Type:
Grant
Filed:
June 8, 2010
Date of Patent:
May 21, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Antonius Theodorus Anna Maria Derksen, Sjoerd Nicolaas Lambertus Donders, Christiaan Alexander Hoogendam, Joeri Lof, Erik Roelof Loopstra, Johannes Catharinus Hubertus Mulkens, Hans Jansen, Jacobus Johannus Leonardus Hendricus Verspay, Alexander Straaijer, Bob Streefkerk
Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
Type:
Grant
Filed:
November 24, 2009
Date of Patent:
May 21, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Yu Cao, Luoqi Chen, Antoine Jean Bruguier, Wenjin Shao
Abstract: An imprint lithography method is disclosed for reducing a difference between an intended topography and an actual topography arising from a part of a patterned layer of fixed imprintable medium. The method involves imprinting an imprint lithography template into a layer of flowable imprintable medium to form a patterned layer in the imprintable medium, and fixing the imprintable medium to form a patterned layer of fixed imprintable medium. Local excitation is applied to the part of the patterned layer to adjust a chemical reaction in the part of the patterned layer to reduce the difference between the intended topography and the actual topography arising from the part of the fixed patterned layer of imprintable medium when this is subsequently used as a resist for patterning the substrate. An imprint medium suitable for imprint lithography with the method is also disclosed.
Type:
Application
Filed:
July 21, 2011
Publication date:
May 16, 2013
Applicant:
ASML Netherlands B.V.
Inventors:
Martinus Bernardus Van Der Mark, Vadim Yevgenyevich Banine, Andre Bernardus Jeunink, Johan Frederik Dijksman, Sander Frederik Wuister, Emiel Andreas Godefridus Peeters, Johan Hendrik Klootwijk, Roelof Koole, Christianus Martinus Van Heesch, Ruediger Guenter Mauczok, JAcobus Bernardus Giesbers
Abstract: A method is disclosed for inspecting a device imprint lithography template to detect defect particles of imprintable medium remaining on the patterned imprinting surface after an earlier imprint step. The method involves illuminating the patterned surface with radiation of a first wavelength selected to induce fluorescence of the defect particles and not to induce fluorescence of anti-adhesion compound on the patterned surface. The presence of defect particles is indicated by the presence of fluorescence from the patterned surface and can be used to initiate a cleaning step when necessary, speeding processing by eliminating unnecessary cleaning. The elimination of false positives from transferred anti-adhesion compound is reduced or eliminated. Related apparatus is also disclosed.
Abstract: Model-Based Sub-Resolution Assist Feature (SRAF) generation process and apparatus are disclosed, in which an SRAF guidance map (SGM) is iteratively optimized to finally output an optimized set of SRAFs as a result of enhanced signal strength obtained by iterations involving SRAF polygons and SGM image. SRAFs generated in a prior round of iteration are incorporated in a mask layout to generate a subsequent set of SRAFs. The iterative process is terminated when a set of SRAF accommodates a desired process window or when a predefined process window criterion is satisfied. Various cost functions, representing various lithographic responses, may be predefined for the optimization process.
Type:
Grant
Filed:
January 14, 2011
Date of Patent:
May 14, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Min-Chun Tsai, Been-Der Chen, Yen-Wen Lu
Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The substrate table and/or the support may be provided with an accelerometer to measure an acceleration of the substrate table and/or the support and the apparatus is provided with a calculator in communication with the accelerometer to calculate an acceleration based position signal from the acceleration measured by the accelerometer.
Abstract: A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.
Type:
Grant
Filed:
November 3, 2011
Date of Patent:
May 14, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Christiaan Alexander Hoogendam, Gerrit Johannes Nijmeijer, Minne Cuperus, Petrus Anton Willem Cornelia Maria Van Eijck
Abstract: A lithographic projection apparatus is disclosed that includes a substrate table, a positioner, a projection system and a fluid handling system. The substrate table is constructed and arranged to hold a substrate, the substrate having an edge feature. The projection system is configured to project a patterned beam of radiation onto the substrate. The fluid handling system is constructed and arranged to supply a liquid flow to a space between the projection system and the substrate table and to at least partly confine the liquid to the space. The positioner is configured to position the substrate on the substrate table so that the edge feature lies downstream of the substrate in the liquid flow.
Type:
Grant
Filed:
June 19, 2009
Date of Patent:
May 14, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Edwin Cornelis Kadijk, Stefan Geerte Kruijswijk
Abstract: An assembly including a conditioning system and an object moveable into and/or out of an area to be conditioned is disclosed. The conditioning system has fluid outlet passages to supply conditioning fluid to the area to be conditioned and is configured to adjust outflow of the conditioning fluid from the fluid outlet passages depending on a position of the object.
Type:
Grant
Filed:
April 11, 2011
Date of Patent:
May 14, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Ronald Van Der Ham, Tjarko Adriaan Rudolf Van Empel, Herman Vogel, Niek Jacobus Johannes Roset
Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.
Abstract: A lithographic apparatus is disclosed that is configured to project a patterned beam of radiation onto a target portion of a substrate, the lithographic apparatus including an illumination system configured to condition a beam of radiation, the illumination system having a uniformity correction system located in a plane which, in use, is illuminated with a substantially constant pupil by the illumination system.
Type:
Grant
Filed:
November 25, 2008
Date of Patent:
May 14, 2013
Assignee:
ASML Netherlands B.V.
Inventor:
Hendrikus Robertus Marie Van Greevenbroek
Abstract: A metal component (262M, 300M) is designed for use in an EUV lithography apparatus, for example as a spectral purity filter (260) or a heating element (300) in a hydrogen radical generator. An exposed surface of the metal is treated (262P, 300P) to inhibit the formation of an oxide of said metal in an air environment prior to operation. This prevents contamination of optical components by subsequent evaporation of the oxide during operation of the component at elevated temperatures.
Type:
Application
Filed:
June 6, 2011
Publication date:
May 9, 2013
Applicant:
ASML Netherlands B.V.
Inventors:
Martin Jacobus Johan Jak, Vadim Yevgenyevich Banine, Wouter Anthon Soer, Andrei Mikhailovich Yakunn, Maarten Van Kampen, Gerard Frans Jozef Schasfoort
Abstract: An optical element includes a top layer which is transmissive for EUV radiation with wavelength in the range of 5-20 nm, and a structure of the top layer is a structure having an rms roughness value equal to or larger than ?/10 for spatial periods equal to or smaller than ?/2. The structure promotes transmission through the top layer to the optical element.
Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention enables full chip pattern coverage while lowering the computation cost by intelligently selecting a small set of critical design patterns from the full set of clips to be used in source and mask optimization. Optimization is performed only on these selected patterns to obtain an optimized source. The optimized source is then used to optimize the mask (e.g. using OPC and manufacturability verification) for the full chip, and the process window performance results are compared. If the results are comparable to conventional full-chip SMO, the process ends, otherwise various methods are provided for iteratively converging on the successful result.
Abstract: A method of inspecting a substrate with first and second layers thereon is disclosed. The method includes directing a beam of electromagnetic radiation at an acute angle towards an edge of the layers, detecting scattered and/or reflected electromagnetic radiation, and establishing, from results of the detecting, whether an edge of the second layer overlaps an edge of the first layer.
Type:
Grant
Filed:
May 22, 2007
Date of Patent:
May 7, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Rik Teodoor Vangheluwe, Youri Johannes Laurentius Maria Van Dommelen, Johannes Anna Quaedackers, Cédric Désiré Grouwstra, Thijs Egidius Johannes Knaapen, Ralf Martinus Marinus Daverveld, Jeroen Hubert Rommers
Abstract: A lithographic apparatus is disclosed that includes a table, at least two target portions on the table or on an object on the table, and a surface material between the at least two target portions. The apparatus further includes an optical system configured to project a beam of radiation, along an optical path towards the table, with a cross-section to irradiate the at least two target portions at the same time. The apparatus further includes a shield moveable into the optical path to restrict the cross-section of the beam of radiation to restrict illumination between the at least two target portions, wherein the surface material between the at least two target portions would degrade when irradiated with radiation from the optical system.
Type:
Grant
Filed:
December 16, 2009
Date of Patent:
May 7, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Cornelis Lambertus Maria Van Weert, Marcus Adrianus Van De Kerkhof, Bearrach Moest
Abstract: A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve.
Type:
Grant
Filed:
September 4, 2012
Date of Patent:
May 7, 2013
Assignee:
ASML Netherlands B.V.
Inventors:
Gerardus Carolus Johannus Hofmans, Hubertus Antonius Geraets, Mark Zellenrath, Sven Gunnar Krister Magnusson