Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: A apparatus having a projection system to project a plurality of radiation beams onto a substrate, wherein the plurality of radiation beams includes a first group of one or more radiation beams formed from radiation within a first wavelength range and a second group of one or more radiation beams formed from radiation within a second wavelength range, different from the first wavelength range. The apparatus also has a dispersion element configured such that one or more radiation beams of the first group are incident on the dispersion element at a different angle from the one or more radiation beams of the second group and such that the one or more radiation beams of the first and second group output from the dispersion element are substantially parallel.

Abstract: Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate; a compartment configured to receive the substrate table; a thermal conditioning unit arranged to receive a substrate to be exposed and thermally condition the substrate; and a transfer system for transferring a thermally conditioned substrate to the substrate table, wherein the substrate table and the thermal conditioning unit are arranged inside the compartment of the lithographic apparatus, at least during a transfer of the thermally conditioned substrate from the thermal conditioning unit to the substrate table.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, the lithographic apparatus including a substrate table constructed to hold a substrate and a gripper arranged to position the substrate on the substrate table. The gripper includes a vacuum clamp arranged to clamp the substrate at a top side thereof. The vacuum clamp may be arranged to clamp at least part of a circumferential outer zone of the substrate top surface. There is also provided a substrate handling method including positioning the substrate using a gripper on a substrate table of a lithographic apparatus, the method including clamping the substrate at a top side thereof using a vacuum clamp of the gripper.

Abstract: A lithographic apparatus including a radiation beam monitoring apparatus, the radiation beam monitoring apparatus including an optical element configured to generate a diffraction pattern, and an imaging detector located after the optical element and not in a focal plane of the optical element such that the imaging detector is capable of detecting a mixture of spatial coherence and divergence of the radiation beam.

Abstract: A cleaning liquid supply system is disclosed. The cleaning liquid supply system may supply an emulsified cleaning liquid to clean an immersion lithographic apparatus. A lithographic apparatus is also disclosed.

Abstract: A source configured to generate EUV radiation includes a fuel droplet generator configured to deliver a droplet of fuel to an interaction point, optics configured to deliver fuel vaporizing and exciting radiation to the interaction point to generate a plasma, and a collector arranged to collect EUV radiation emitted by the plasma. The optics are arranged such that in use the fuel vaporizing and exciting radiation is incident upon more than one side of the fuel droplet at the interaction point.

Abstract: A fluid handling structure for a lithographic apparatus, the fluid handling structure to confine liquid to a space, the fluid handling structure having, on an undersurface surrounding the space, a liquid supply opening to supply liquid onto an undersurface of the fluid handling structure and, radially inward with respect to the space of the liquid supply opening, a two dimensional array of liquid extraction openings to extract a liquid from the space and to extract liquid on the undersurface from the liquid supply opening.

Abstract: An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.

Abstract: A system for cleaning a limited area of a top surface of a substrate table or an object positioned on a top surface of a substrate table is disclosed. The optical system used during normal imaging is adjusted to limit the cross-sectional area of a radiation beam to form a cleaning radiation beam which impinges on the limited area.

Abstract: A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: An immersion lithographic projection apparatus has a liquid confinement structure configured to at least partly confine liquid to a space between a projection system and a substrate, the confinement structure having a buffer surface, when in use, positioned in close proximity to a plane substantially comprising the upper surface of the substrate and of a substrate table holding the substrate, to define a passage having a flow resistance. A recess is provided in the buffer surface, the recess, when in use, being normally full of immersion liquid to enable rapid filling of a gap between the substrate and substrate table as the gap moves under the buffer surface. The recess may be annular or radial and a plurality of recesses may be provided.

Abstract: A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The planarization layer is of substantially uniform thickness and/or its outer surface has a peak to valley distance of less than 10 ?m. The planarization layer may be formed by applying two solutions of different concentration. A surface treatment may be applied to the burls to repel a solution of the planarization layer material.

Abstract: A method for radiation beam welding of a first member to a second member of a cooling body for an electromagnetic actuator. The first member on a side thereof comprises a surface portion provided with a recess, which is delimited by a periphery, and wherein the second member comprises a substantially continuous first surface portion complementary to the surface portion of the first member in order to close off the recess, the second member being provided with a second surface portion opposite to the first surface portion. The method comprising arranging the first and second member such that the first surface portion engages with the surface portion of the first member; providing a radiation beam, directing the radiation beam towards the second surface portion such that the first and second member are welded together at the periphery of the recess.

Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

Abstract: A barrier member is provided for use in immersion lithography. The barrier member includes an extractor assembly on a bottom surface configured to face the substrate. The extractor assembly includes a plate configured to split the space between a liquid removal device and the substrate in two such that a meniscus is formed in an upper channel between the liquid removal device and the plate and below the plate between the plate and the substrate.

Abstract: A fluid handling structure is disclosed in which the size and arrangement of the fluid extraction openings is specified in order to reduce the vibrations which are transmitted to the fluid handling structure as a result of two-phase extraction. The area of each fluid extraction opening and/or the total area of all of the fluid extraction openings and/or the space in between neighboring fluid extraction openings may be controlled. The reduction in vibrations increases the accuracy of the exposure.