Abstract: Systems and methods provide the use of a two or three plate Alvarez lens located in a field plane of a projection lens of a lithographic apparatus. The Alvarez lens can be used to modify the shape of the focal plane to match a previously determined surface topography, while at the same time the Alvarez lens can be designed to include a built-in correction for astigmatism and other residual Zernike errors that would otherwise be introduced.

Abstract: A radiation source includes an uncapped Mo/Si multilayer mirror, and a cleaning apparatus configured to remove a deposition comprising Sn on the uncapped Mo/Si multilayer mirror. The cleaning apparatus is configured to provide a gas comprising one or more of H2, D2 and HD and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the radiation source, to produce hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas, and to supply the hydrogen and/or deuterium radicals and radicals of the one or more additional compounds to the uncapped Mo/Si multilayer mirror to remove at least part of the deposition.

Abstract: Actuator for exerting a force and a torque on an object, wherein the actuator includes a first part that is movable with respect to a second part of the actuator in at least a first degree of freedom, wherein the object is mounted to the first part, wherein one of the parts is provided with a first electrical coil that is arranged to cooperate with a magnetizable portion of the other part and wherein a controller of the actuator is arranged to generate a first electrical current through the first electrical coil for generating a force between the parts, wherein the one of the parts is provided with a second electrical coil which is arranged to cooperated with a magnetizable portion of the other part, wherein the controller is further arranged to generate a second current through the second coil and the first current through the first electrical coil for exerting the force and torque between the parts so that the actuator is arranged to exert the force and the torque on the object with respect to the second pa

Abstract: A fluid handling structure configured to supply and confine immersion liquid to a space defined between a projection system and a facing surface facing the fluid handling structure is disclosed. The fluid handling structure includes a supply passage formed therein for the passage of fluid from outside the fluid handling structure to the space, and a thermal isolator positioned adjacent the supply passage at least partly to isolate fluid in the supply passage from a thermal load induced in the fluid handling structure.

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and the substrate is filled with a liquid. An edge seal member at least partly surrounds the substrate or other object on a substrate table to prevent liquid loss when edge portions of the substrate or other object are, for example, imaged or illuminated.

Abstract: The joint between the projection system element and its support comprises an inorganic layer or a direct bond and is thus liquid tight, which can prevent deformation by an immersion liquid. The joint can be made either warm or cold. Solders, glue, and glue protection can all be used in the formation of this joint. In an embodiment, the elements and its support are made of quartz.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: An extraction system, including a pump to pump gas along a conduit to a check valve configured to open at an upstream pressure over a certain magnitude, a pressure sensor to generate a signal indicative of a pressure of gas between the pump and the check valve, and a controller configured to generate a stop signal if a signal from the pressure sensor indicates that the pressure of gas between the pump and the check valve is below a certain magnitude.

Abstract: A lithographic apparatus having: a substrate table constructed to hold a substrate; a projection system configured to project a patterned radiation beam onto a target portion of the substrate; a substrate surface actuator including a fluid opening for fluid flow therethrough from/onto a facing surface facing the substrate surface actuator to generate a force between the substrate surface actuator and the facing surface, the facing surface being a top surface of the substrate or a surface substantially co-planar with the substrate; and a position controller to control the position and/or orientation of a part of the facing surface by varying fluid flow through the fluid opening to displace the part of the facing surface relative to the projection system.

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

Abstract: A support for an object having a support surface configured to support the object; wherein the support surface includes a main part and a moveable part, the moveable part of the support surface being moveable between a retracted position in which the moveable part of the support surface is adapted to be substantially in the same plane as the main part of the support surface and an extended position in which the moveable part of the support surface protrudes from the plane of the main part of the support surface.

Abstract: A laser device includes a seed laser, an amplifier, a detector, and an optical element arranged to direct radiation emitted by the seed laser towards a plasma generation site. The optical element is arranged to direct towards the detector amplified spontaneous emission radiation which has been emitted by the seed laser and has been reflected from a droplet of fuel material. The detector is arranged to trigger generation of a laser radiation pulse by the seed laser when the reflected amplified spontaneous emission radiation is detected.

Abstract: A lithographic apparatus includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate. The apparatus also includes a barrier member, surrounding a space between the projection system and, in use, the substrate, to define in part with the projection system a reservoir for liquid. A radially outer surface of the barrier member facing a portion of projection system and a radially outer surface of the portion of the projection system facing the barrier member each have a liquidphobic outer surface. The liquidphobic outer surface of the barrier member and/or the liquidphobic outer surface of the portion of the projection system has an inner edge that defines in part the reservoir.

Abstract: An immersion lithographic apparatus comprising a surface which is curved such that a surface-tension drainage force acts in a direction on a film of immersion liquid on the surface.

Abstract: In a single or multiple stage lithography apparatus, a table provides a confining surface to a liquid supply system during, for example, substrate table exchange and/or substrate loading and unloading. In an embodiment, the table has a sensor to make a measurement of the projection beam during, for example, substrate table exchange and/or substrate loading and unloading.

Abstract: A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Abstract: A method for calculating electromagnetic scattering properties of a finite periodic structure having a direction of periodicity is disclosed. The method numerically calculates electromagnetic scattering properties using spatial discretization in the direction of periodicity and numerically calculates electromagnetic scattering properties using spectral discretization in a direction orthogonal to the direction of periodicity.

Abstract: An EUV radiation generation apparatus includes a laser configured to generate pulses of laser radiation, and an optical isolation apparatus that includes a rotatably mounted reflector and a radially positioned reflector. The rotatably mounted reflector and the laser are synchronized such that a reflective surface of the rotatably mounted reflector is in optical communication with the radially positioned reflector when the optical isolation apparatus receives a pulse of laser radiation to allow the pulse of laser radiation to pass to a plasma formation location and cause a radiation emitting plasma to be generated via vaporization of a droplet of fuel material. The rotatably mounted reflector and the laser are further synchronized such that the reflective surface of the rotatably mounted reflector is at least partially optically isolated from the radially positioned reflector when the optical isolation apparatus receives radiation reflected from the plasma formation location.

Abstract: A method of projecting a pattern from a patterning device onto a substrate using a projection system, the method including using an optical phase adjustment apparatus in the projection system to apply a phase modification to radiation which has been diffracted from an assist feature of the pattern, the phase modification acting to reduce the size of an assist feature image exposed in resist on the substrate or prevent printing of the assist feature image in the resist on the substrate, while maintaining a contribution of the assist feature image to an image enhancement of a functional feature of the pattern.