Abstract: A lithographic system comprises an array of individually controllable elements, a projection system, datapath hardware, and a conversion system. The array of individually controllable elements is capable of modulating a radiation beam. The projection system is configured to project the modulated radiation beam onto a target portion of a substrate. The datapath hardware converts an input pattern file into a control signal for controlling the array of individually controllable elements. The conversion system is configured to convert a requested device layout pattern into an input pattern file for the datapath hardware. The input pattern file is a spatial-frequency-restricted representation of the requested device layout pattern.

Abstract: A fluid handling structure for a lithographic apparatus is disclosed, the fluid handling structure successively has, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: an elongate opening or a plurality of openings arranged in a first line that, in use, are directed towards a substrate and/or a substrate table configured to support the substrate; a gas knife device having an elongate aperture in a second line; and an elongate opening or a plurality of openings adjacent the gas knife device.

Abstract: The invention relates to a method for determining a suppression factor of a suppression system. The suppression system is arranged to suppress migration of a contaminant gas out of a first system. The suppression factor is an indication of the performance of the suppression system. The method includes introducing a tracer gas in the sub-system, providing a detection system configured to detect the amount of tracer gas that has migrated out of the first system, determining a first suppression factor for the suppression system for the tracer gas. The method further includes determining a second suppression factor for the suppression system for the contaminant gas based on the first suppression factor.

Abstract: An imprint lithography apparatus is disclosed that has a first support structure arranged to support an imprint template, and a first actuator attached to the first support structure, and arranged in use to be located between the first support structure and the imprint template. The first actuator is configured to apply a force to the imprint template. The imprint lithography apparatus further includes a second support structure and a second actuator located between the second support structure and the first support structure. The second actuator is configured to apply a force to the second support structure, wherein a range of movement of the second actuator is greater than a range of movement of the first actuator.

Abstract: A lithographic apparatus is disclosed having a projection system housing supporting internally one or more lens elements, and a movement damper connected to the projection system housing, the movement damper configured to damp movement of the projection system housing at an eigenfrequency of at least one of the one or more lens elements and/or of the projection system housing.

Abstract: A lithographic apparatus is disclosed wherein a liquid supply system is configured to at least partly fill a region between a substrate and a projection system of the lithographic apparatus with a liquid and having a liquid confinement structure fixed in a plane substantially perpendicular to an optical axis of the projection system and configured to cooperate with a substrate table configured to hold the substrate in order to restrict the liquid to a region above an upper surface of the substrate table so that a side of the substrate to be exposed is substantially covered in the liquid during exposure.

Abstract: A method for transferring an image of a mask pattern through a pitch range onto a substrate is presented. In an embodiment, the method includes illuminating the mask pattern of an attenuated phase shift mask using a multipole illumination that includes an on-axis component and an off-axis component, the mask pattern including non-printing assist features configured for a pitch larger than twice a minimum pitch of the mask pattern, and projecting an image of the illuminated mask pattern onto the substrate.

Abstract: An immersion lithographic apparatus is disclosed that has a measurement system or a prediction system for measuring and/or predicting, respectively, an effect associated with a temperature fluctuation of the immersion liquid, and a control system for controlling the or another effect associated with the temperature of the immersion liquid, on the basis of the measurement and/or prediction obtained by the measurement system and/or prediction system, respectively. An associated control system and device manufacturing method is also disclosed.

Abstract: A system for tuning the refractive index of immersion liquid in an immersion lithographic apparatus is disclosed. Two or more immersion liquids of different refractive index are mixed together in order to achieve a desired refractive index. Further, the fluids may be conditioned and treated to maintain optical characteristics.

Abstract: A beam modifying unit increases both temporal pulse length and Etendue of an illumination beam. The pulse modifying unit receives an input pulse of radiation and emits one or more corresponding output pulses of radiation. A beam splitter divides the incoming pulse into a first and a second pulse portion, and directs the first pulse portion along a second optical path and the second portion along a first optical path as a portion of an output beam. The second optical path includes a divergence optical element. A first and a second mirror, each with a radius of curvature, are disposed facing each other with a predetermined separation, and receive the second pulse portion to redirect the second portion, such that the optical path of the second portion through the pulse modifier is longer than that of the first portion, and the separation is less than radius of curvature.

Abstract: A fluid handling structure configured to supply immersion liquid to a space defined between a projection system and a facing surface facing the fluid handling structure is disclosed. An undersurface of the fluid handling structure has a supply opening configured to supply fluid toward the facing surface, a plurality of extraction openings configured to remove fluid from between the fluid handling structure and the facing surface, and a protrusion between the supply opening and the extraction openings.

Abstract: An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (?d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation.

Abstract: A method of thermally conditioning an optical element operating in a vacuum environment. The optical element includes a first body having at least one optical surface and at least one heat transfer surface. The first body is dynamically controlled in position and/or orientation. The method includes controlling a temperature of a second body to a desired temperature, the second body including a second heat transfer surface; positioning the second body adjacent the first body and dynamically controlling the second body in position and/or orientation so as to maintain the first and second heat transfer surfaces in a substantially constant arrangement without contact between the bodies; and delivering a gas as a heat transfer medium into a heat transfer space defined by the first and second heat transfer surfaces, while controlling the pressure of the gas in the heat transfer space to between about 30 Pa and about 300 Pa.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus.

Abstract: A lithographic apparatus is disclosed including a liquid supply system configured to at least partly fill a space between the projection system and the substrate with a liquid, an outlet configured to remove a mixture of liquid and gas passing through a gap between a liquid confinement structure of the liquid supply system and the substrate, and an evacuation system configured to draw the mixture through the outlet, the evacuation system having a separator tank arranged to separate liquid from gas in the mixture and a separator tank pressure controller, connected to a non-liquid-filled region of the separator tank, configured to maintain a stable pressure within the non-liquid-filled region.

Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.

Abstract: Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Abstract: An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and/or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.