Abstract: A grating is provided on a mirror for specularly reflecting and diffracting a grazing-incidence beam of radiation and has a periodic structure with a grating period comprising first (ridge) and second (trench) substructures either side of a sidewall 806 facing the incident beam 800. The ridge is configured to specularly reflect the beam from the flat top 808 of the ridge into a specularly reflected beam 810 in a zeroth-order direction ??=?. The grating is configured with fixed or varying pitch to diffract the beam from the grating periods in one or more non-zero-diffraction-order direction ????. The shape of the trench may be is described by structural parameters top width and depth that define the aspect ratio of the trench. The shape is determined such that any rays (and optionally diffraction) of the beam that reflect once from the trench floor in the zeroth-order direction are obscured by the sidewall.

Abstract: An apparatus having: a vacuum chamber for enclosing an article support, the article support configured to support an article such that a volume is defined between the article support and the article, the article support including a plurality of supporting protrusions configured to provide a plane of support for the article; a conduit for providing a fluid to the volume such that the fluid provides heat transfer between the article and the article support; and a controller for controlling the fluid supply to the volume, wherein the controller is configured to control a fluid supply unit to start removing the fluid substantially at a time the article reaches a stable temperature.

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

Abstract: A mounted hollow-core fiber arrangement includes a hollow-core fiber having a microstructure, and a mount arrangement including a plurality of mounting contacts configured to apply a force to an outer layer of the hollow-core fiber. A portion of the hollow-core fiber is located in a receiving region of the mount arrangement. The plurality of mounting contacts are positioned around the receiving region. The mounting contacts are distributed around the receiving region, the distribution of the mounting contacts corresponding to a distribution of features of the microstructure of the hollow-core fiber. The mounted hollow core fiber can be used in a radiation source apparatus for providing broadband radiation.

Abstract: A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

Abstract: A method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Abstract: A method for training a deep learning model of a patterning process. The method includes obtaining (i) training data including an input image of at least a part of a substrate having a plurality of features and including a truth image, (ii) a set of classes, each class corresponding to a feature of the plurality of features of the substrate within the input image, and (iii) a deep learning model configured to receive the training data and the set of classes, generating a predicted image, by modeling and/or simulation with the deep learning model using the input image, assigning a class of the set of classes to a feature within the predicted image based on matching of the feature with a corresponding feature within the truth image, and generating, by modeling and/or simulation, a trained deep learning model by iteratively assigning weights using a loss function.

Abstract: A laser focusing system (330) for use in an EUV radiation source is described, the laser focusing system comprising: •—a first curved mirror (330.1) configured to receive a laser beam from a beam delivery system (320) and generate a first reflected laser beam (316); •—a second curved mirror (330.2) configured to receive the first reflected laser beam (316) and generate a second reflected laser beam (317), wherein the laser focusing system (330) is configured to focus the second reflected laser beam (317) to a target location (340) in a vessel (350) of the EUV radiation source (360).

Abstract: A method for determining a preferred control strategy relating to control of a manufacturing process for manufacturing an integrated circuit. The method includes: obtaining process data associated with a design of said integrated circuit; and obtaining a plurality of candidate control strategies configured to control the manufacturing process based on the process data, each candidate control strategy including an associated cost metric based on an associated requirement to implement the candidate control strategy. A quality metric related to an expected performance of the manufacturing process is determined for each candidate control strategies, and a preferred control strategy is selected based on the determined quality metrics and associated cost metrics for each candidate control strategy.

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract: A device manufacturing method using a lithographic apparatus having a localized immersion system for confining an immersion liquid to a space between a projection system and a substrate to be exposed by the projection system, the method including: predicting a set of first locations on the substrate having a risk of residual liquid from the immersion system when exposed using an initial route for a substrate to expose a plurality of fields thereon; determining a set of modifications to the initial route to reduce the risk of residual loss; test exposing at least one test substrate using the initial route; obtaining a set of second locations of defects in the exposed test substrate; selecting a subset of the set of modifications by comparing the first locations and the second locations; and exposing a plurality of production substrates using the initial route modified by the selected subset of modifications.

Abstract: A hollow-core photonic crystal fiber (HC-PCF) assembly for converting input radiation to broadband radiation, the hollow core fiber assembly including: a micro-structured fiber with a hollow core extending along a length of the fiber from an input end configured to receive input radiation to an output end configured to output broadband radiation, wherein the hollow core of the fiber is configured to include a medium; and a density control system configured to control a density profile of the medium along at least a part of the length of the fiber to establish a desired zero dispersion wavelength profile along at least a part of the length of the fiber.

Abstract: A method of aligning a substrate within an apparatus. The method includes determining a substrate grid based on measurements of a plurality of targets, each at different locations on a substrate. The determining includes repetitions of updating the substrate grid after each measurement of a target, and using the updated grid to align a measurement of a subsequent target.

Abstract: Embodiments consistent with the disclosure herein include methods for image enhancement for a multi-beam charged-particle inspection system. Systems and methods consistent with the present disclosure include analyzing signal information representative of first and second images, wherein the first image is associated with a first beam of a set of beams and the second image is associated with a second beam of the set of beams; detecting, based on the analysis, disturbances in positioning of the first and second beams in relation to a sample; obtaining an image of the sample using the signal information of the first and second beams; and correcting the image of the sample using the identified disturbances.

Abstract: The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.