Abstract: Systems and methods are provided for evacuating a chamber 101. The evacuation system comprises a cooler 320 coupled with the chamber and a controller 350. The controller is configured to determine whether a property of the cooler or the chamber satisfies one or more conditions. Based on the determination that the property satisfies the one or more conditions, the controller is configured to isolate the cooler from the chamber or control the temperature of the cooler to increase at one or more rates. The controller is further configured to control one or more pumps 330,340 to pump the chamber to a base pressure value.

Abstract: A method of operating a secondary imaging system of a charged particle beam apparatus may include using an anti-scanning mode. Excitation of a component of the secondary imaging system may be adjusted synchronously with a primary scanning deflection unit. Together with an anti-scanning deflection unit performing anti-scanning, a component of the secondary imaging system, such as a lens, may be adjusted in step. As scanning and anti-scanning is performed, excitation parameters of the component may also be constantly updated.

Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

Abstract: The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

Abstract: An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

Abstract: A radiation source includes a fuel supply, a collector, a debris mitigation system, and a temperature control system. The fuel supply device supplies fuel. The excitation device excites the fuel into a plasma. The collector collects radiation emitted by the plasma and directs the radiation to a beam exit. The debris mitigation system collects debris generated by the plasma and has a first component having a first conduit passing therethrough and a second component having a second conduit passing therethrough. The temperature control system increases or decreases temperatures of the first component and the second component by selectively heating or cooling a thermal transfer fluid circulating through the respective conduit. The temperature control system cools the first component to a first temperature that is below the melting point of the fuel and heats the second component to a second temperature that is above the melting point of the fuel.

Abstract: A method for source mask optimization with a lithographic projection apparatus. The method includes determining a multi-variable source mask optimization function using a plurality of tunable design variables for an illumination system of the lithographic projection apparatus, a projection optics of the lithographic projection apparatus to image a mask design layout onto a substrate, and the mask design layout. The multi-variable source mask optimization function may account for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by a same slit position of the exposure apparatus. The method includes iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

Abstract: Disclosed is a wavefront sensor for measuring a tilt of a wavefront at an array of locations across a beam of radiation, wherein said wavefront sensor comprises a film, for example of Zirconium, having an indent array comprising an indent at each of said array of locations, such that each indent of the indent array is operable to perform focusing of said radiation. Also disclosed is a radiation source and inspection apparatus comprising such a wavefront sensor.

Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

Abstract: A method of determining representative patterns for training a machine learning model to predict optical proximity corrections. The method includes obtaining a design layout including a set of groups of patterns, each group of patterns includes one or more sub-groups; determining a set of representative patterns of the set of groups of patterns, a representative pattern being a sub-group whose instances appear in the set of groups of patterns; obtaining, via simulating an optical proximity correction process using the set of representative patterns, optical proximity correction data associated with the set of representative patterns; and training a machine learning model to predict optical proximity corrections for the design layout based on the set of representative patterns and the set of optical proximity correction data.

Abstract: Disclosed is a phase modulator apparatus comprises at least a first phase modulator for modulating input radiation, and a metrology device comprising such a phase modulator apparatus. The first phase modulator comprises a first moving grating in at least an operational state for diffracting the input radiation and Doppler shifting the frequency of the diffracted radiation; and a first compensatory grating element comprising a pitch configured to compensate for wavelength dependent dispersion of at least one diffraction order of said diffracted radiation.

Abstract: Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.

Abstract: A metrology tool that includes a substrate table to hold a substrate; a projection system configured to project a beam on a target portion of the substrate; an actuator configured to adjust a position of the projection system relative to the substrate on the substrate table; a sensor configured to determine a position of the substrate table; and a one or more processors configured to: determine, based on the position of the substrate table, a position error of the substrate table with respect to a reference; and control, via the actuator, a position of the projection system to compensate for the position error of the substrate table so that the beam projects on the target portion of the substrate.

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder having a main body having a main body surface, a plurality of main burls projecting from the main body surface, wherein each main burl has a distal end surface configured to support the substrate, a first seal member projecting from the main body surface and having an upper surface, the first seal member surrounding the plurality of main burls and configured to restrict the passage of liquid between the substrate and the main body surface radially inward past the first seal member, and a plurality of minor burls projecting from the upper surface of the first seal member, wherein each minor burl has a distal end surface configured to support the substrate.

Abstract: Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.

Abstract: A fluid handling structure configured to confine immersion fluid to a region of a lithographic apparatus, the fluid handling structure comprising an aperture formed therein for the passage therethrough of a radiation beam through the immersion fluid, the aperture defining an immersion space to be filled with the immersion fluid, and an inner part and an outer part; wherein the inner part and the outer part are arranged so as to form therebetween a variable space and a connecting space that connects the variable space to the immersion space, wherein the outer part is movable relative to the inner part in a first plane so as to change in shape the variable space but not the connecting space, and wherein the fluid handling structure is configured to contain the immersion fluid in the variable space.

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

Abstract: A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. i.e., 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark.