Patents Assigned to ASML Netherlands
  • Patent number: 11435673
    Abstract: A method of determining a set of metrology point locations, the set including a subset of potential metrology point locations on a substrate, the method including: determining a relation between noise distributions associated with a plurality of the potential metrology point locations using existing knowledge; and using the determined relation and a model associated with the substrate to determine the set.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: September 6, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Kevin Van De Ruit, Roy Werkman, Jochem Sebastiaan Wildenberg
  • Patent number: 11435671
    Abstract: A method of reducing variability of an error associated with a structure on a substrate in a lithography process is disclosed. The method includes determining, based on one or more images obtained based on a scan of the substrate by a scanning electron microscope (SEM), a first error due to a SEM distortion in the image. The method also includes determining, based on the image, a second error associated with a real error of the structure, where the error associated with the structure includes the first error and the second error. A command is generated by a data processor that enables a modification of the lithography process and an associated reduction of the variability of the error based on reducing any of the first error or the second error.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: September 6, 2022
    Assignee: ASML Netherlands B.V.
    Inventor: Marleen Kooiman
  • Publication number: 20220276569
    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.
    Type: Application
    Filed: July 17, 2020
    Publication date: September 1, 2022
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey DEN BOEF, Kaustuve BHATTACHARYYA, Keng-Fu CHANG, Simon Gijsbert Josephus MATHIJSSEN
  • Publication number: 20220276575
    Abstract: Described herein are methods of determining an alignment model associated with a mark layout. A method includes obtaining (a) first measurement data a relatively dense mark layout (e.g., more than 200 marks) in comparison with a relatively sparse mark layout (e.g., less than 65 marks) and a second measurement data associated with the relatively sparse mark layout, and (b) a first fitted model that describes object deformation for the relatively dense overlay mark layout; and determining the alignment model based on a second fitted model that describes object deformation for the relatively sparse mark layout, via an fitting technique, based on generalized squares fitting employing an oblique inner product matrix (e.g., W) or an oblique projection least squares fitting employing an oblique projection matrix (e.g., P).
    Type: Application
    Filed: April 2, 2020
    Publication date: September 1, 2022
    Applicant: ASML Netherlands B.V.
    Inventor: Maria Edo HULSEBOS
  • Publication number: 20220277926
    Abstract: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.
    Type: Application
    Filed: August 25, 2020
    Publication date: September 1, 2022
    Applicant: ASML Netherlands B.V.
    Inventors: Yixiang WANG, Shibing LIU, Shanhui CAO, Kangsheng QIU, Juying DOU, Ying LUO, Yinglong LI, Qiang LI, Ronald VAN DER WILK, Jan-Gerard Cornelis VAN DER TOORN
  • Patent number: 11429763
    Abstract: Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904?, 906?) along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: August 30, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Remco Dirks, Markus Gerardus Martinus Maria Van Kraaij, Maxim Pisarenco
  • Patent number: 11428521
    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: August 30, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
  • Patent number: 11430629
    Abstract: Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element. The detector comprises a switching element configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: August 30, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Yongxin Wang, Zhonghua Dong, Rui-Ling Lai
  • Patent number: 11430631
    Abstract: Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: August 30, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Kuo-Shih Liu, Xuedong Liu, Wei Fang, Jack Jau
  • Patent number: 11430678
    Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: August 30, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Jeroen Gerard Gosen, Te-Yu Chen, Dennis Herman Caspar Van Banning, Edwin Cornelis Kadijk, Martijn Petrus Christianus Van Heumen, Erheng Wang, Johannes Andreas Henricus Maria Jacobs
  • Patent number: 11428925
    Abstract: Disclosed is a metrology apparatus comprising an optical element configured to receive at or near a pupil plane of the metrology apparatus, at least first radiation comprising a first higher diffracted order and second radiation comprising a zeroth order resulting from illumination of a metrology target with radiation; and to direct said first radiation and second radiation together in a first direction. The metrology apparatus is further configured to form at least a first image of a first interference pattern, the first interference pattern resulting from interference of said first radiation and second radiation at an image plane.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: August 30, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Arjan Johannes Anton Beukman, Alessandro Polo, Henricus Petrus Maria Pellemans, Nitish Kumar
  • Publication number: 20220270849
    Abstract: A charged particle beam system may include a primary source, a secondary source, and a controller. The primary source may be configured to emit a charged particle beam along an optical axis onto a region of a sample. The secondary source may be configured to irradiate the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam onto a region of a sample, irradiating the region of the sample with a secondary source, and changing a parameter of an output of the secondary source. A method of detecting defects may include inspecting a sample, generating a first defect distribution, and generating a second defect distribution.
    Type: Application
    Filed: August 26, 2020
    Publication date: August 25, 2022
    Applicant: ASML Netherlands B.V.
    Inventors: Jun JIANG, Chih-Yu JEN, Ning YE, Jian ZHANG
  • Patent number: 11422472
    Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: August 23, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Paulus Jacobus Maria Van Adrichem, Ahmad Wasiem Ibrahim El-Said, Christoph Rene Konrad Cebulla Hennerkes, Johannes Christiaan Maria Jasper
  • Patent number: 11422477
    Abstract: The invention provides a vibration isolation system (IS), comprising a piston (402) to carry a payload, a connecting member (410), a spring (404) and a flexible member (408). The spring is arranged to support the piston along a direction with a positive stiffness. The flexible member is arranged to apply a force to the piston along the direction via the connecting member with a negative stiffness.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: August 23, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Roy Hendrikus Emilie Maria Jacobs, Cornelius Adrianus Lambertus De Hoon, Jeroen Pieter Starreveld, Johannes Petrus Martinus Bernardus Vermeulen
  • Patent number: 11422476
    Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
    Type: Grant
    Filed: October 2, 2020
    Date of Patent: August 23, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Emil Peter Schmitt-Weaver, Kaustuve Bhattacharyya, Wim Tjibbo Tel, Frank Staals, Leon Martin Levasier
  • Patent number: 11422473
    Abstract: A method for improving a process model by measuring a feature on a printed design that was constructed based in part on a target design is disclosed. The method includes obtaining a) an image of the printed design from an image capture device and b) contours based on shapes in the image. The method also includes identifying, by a pattern recognition program, patterns on the target design that include the feature and determining coordinates, on the contours, that correspond to the feature. The method further includes improving the process model by at least a) providing a measurement of the feature based on the coordinates and b) calibrating the process model based on a comparison of the measurement with a corresponding feature in the target design.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: August 23, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Jiao Liang, Chen Zhang, Qiang Zhang, Yunbo Guo
  • Patent number: 11421729
    Abstract: The invention relates to elastic guiding device to support a mass with respect to a base in a support direction, wherein the stiffness in support direction compared to stiffness in other direction, for example the stiffness in vertical direction compared to the stiffness in horizontal directions is substantially increased. The invention further relates to a positioning device comprising at least one elastic guiding device, and a lithographic apparatus comprising such positioning device.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 23, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Erwin Andreas Bernardus Mulder, Krijn Frederik Bustraan, Antonius Franciscus Johannes De Groot, Rinze Koolstra, Paul Peter Anna Antonius Brom
  • Patent number: 11415899
    Abstract: Methods and apparatus for determining a focus of a projection system are disclosed. In one arrangement, a method includes obtaining first data derived from a first measurement of one or more selected properties of a target pattern formed on a substrate by exposing the substrate using the projection system. The first measurement is performed before the substrate is etched based on the target pattern. The method further includes obtaining second data derived from a second measurement of the one or more selected properties of the target pattern. The second measurement is performed after the substrate is etched based on the target pattern. The method further includes determining the focus of the projection system using the first data and the second data.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: August 16, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Bart Laenens
  • Patent number: 11416979
    Abstract: A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.
    Type: Grant
    Filed: January 18, 2018
    Date of Patent: August 16, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Wei Fang, Cho Huak Teh, Ju Hao Chien, Yi-Ying Wang, Shih-Tsung Chen, Jian-Min Liao, Chuan Li, Zhaohui Guo, Pang-Hsuan Huang, Shao-Wei Lai, Shih-Tsung Hsu
  • Patent number: 11415886
    Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: August 16, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Sander Frederik Wuister, Oktay Yildirim, Gijsbert Rispens, Alexey Olegovich Polyakov