Patents Assigned to ASML Netherlands
  • Patent number: 10928737
    Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: February 23, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Jochem Sebastiaan Wildenberg, Roy Werkman, Erik Johannes Maria Wallerbos
  • Patent number: 10921720
    Abstract: The invention relates to support structure, comprising: a first body; a second body; a first support having a first stiffness; a second support having a second stiffness, wherein the second body supports the first body at a first location via the first support, wherein the second body supports the first body at a second location via the second support; a position measurement system arranged to generate a deformation signal representative of a difference of deformation of the first body and the second body relative to each other; a first actuator to apply a force between the first body and the second body at or near the first location; a second actuator to apply a force between the first body and the second and body at or near the second location; wherein the support structure comprises a controller arranged to determine a deformation compensation signal on the basis of the first stiffness, the second stiffness and the deformation signal and to drive at least one of the first actuator and the second actuator o
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: February 16, 2021
    Assignee: ASML Netherlands B.V.
    Inventor: Hans Butler
  • Publication number: 20210041793
    Abstract: A positioning system to position a structure comprises an actuator and a control unit to control the actuator in response to a position setpoint received by the control unit. The actuator comprises a magnet assembly comprises a magnet configured to provide a magnetic flux, and a coil assembly, wherein the coil assembly and the magnet assembly are movable relative to each other, the coil assembly comprising a coil, an actuation of the coil by a drive current providing for a force between the magnet assembly and the coil assembly. The magnet assembly comprises a further electric conductor, the further electric conductor comprising a non-ferromagnetic electrically conductive material, wherein the further electric conductor is magnetically coupled to the coil of the coil assembly and forms a short circuit path for an inductive electrical current induced in the further electric conductor as a result of an actuator current in the coil.
    Type: Application
    Filed: February 14, 2019
    Publication date: February 11, 2021
    Applicants: ASML Netherlands B.V., Carl Zeiss SMT GmbH
    Inventors: Maarten Hartger KIMMAN, Jasper WESSELINGH
  • Publication number: 20210041794
    Abstract: An apparatus, which may form part of a lithographic apparatus, comprises a substrate table, a projection system, a gas lock and a gas flow guide. The substrate table is suitable for supporting a substrate. The projection system has a body which defines an interior and an opening. The projection system is configured and arranged to project a radiation beam through the opening onto a substrate supported by the substrate table. The gas lock is suitable for providing a gas flow from the opening away from the interior. The gas flow guide is configured to guide at least a portion of the gas flow away from the substrate supported by the substrate table.
    Type: Application
    Filed: January 18, 2019
    Publication date: February 11, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Güne NAKIBOGLU, Dries Vaast Paul HEMSCHOOTE, Remco Yuri VAN DE MOESDIJK
  • Publication number: 20210041795
    Abstract: Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck (300) in which a cleaning reticle or substrate (320) is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles (360) in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.
    Type: Application
    Filed: February 4, 2019
    Publication date: February 11, 2021
    Applicants: ASML Netherlands B..V., ASML Holding N.V.
    Inventors: Richard Joseph BRULS, Ronald Peter ALBRIGHT, Peter Conrad KOCHERSPERGER, Victor Antonio PEREZ-FALCON
  • Patent number: 10915033
    Abstract: Combination of a stage and a level sensor configured to sense a height level at a target location on an object is described, the stage comprising an object table configured to hold the object and a positioning device for displacing the object table relative to the level sensor in a first direction, the level sensor comprising a projection system configured to project a measurement beam onto a measurement area of the object, the measurement area having a measurement area length in the first direction, a detector system configured to receive different portions of the measurement beam after being reflected off different sub-areas within the measurement area, the different sub-areas being arranged in the first direction, and to supply output signals representative of the different portions received, a signal processing system configured to process the output signals from the detector system.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: February 9, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Bram Van Hoof, Jeroen Cottaar
  • Patent number: 10916453
    Abstract: A lithographic apparatus includes a substrate table, a post-exposure handling module, a substrate handling robot and a drying station. The substrate table is configured to support a substrate for an exposure process. The post-exposure handling module is configured to handle the substrate post-exposure. The substrate handling robot is configured to transfer the substrate from the substrate table along a substrate unloading path into the post-exposure handling module. The drying station is configured to actively remove liquid from a surface of the substrate. The drying station is located in the substrate unloading path. The drying station is located in the post-exposure handling module. The post-exposure handling module may be a substrate handler.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: February 9, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Aart Adrianus Van Beuzekom, Jozef Augustinus Maria Alberti, Hubert Marie Segers, Ronald Van Der Ham, Francis Fahrni, Ruud Olieslagers, Gerben Pieterse, Cornelius Maria Rops, Pepijn Van Den Eijnden, Paul Van Dongen, Bas Willems
  • Patent number: 10915689
    Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: February 9, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Peter Ten Berge, Everhardus Cornelis Mos, Richard Johannes Franciscus Van Haren, Peter Hanzen Wardenier, Erik Jensen, Bernardo Kastrup, Michael Kubis, Johannes Catharinus Hubertus Mulkens, David Frans Simon Deckers, Wolfgang Helmut Henke, Joungchel Lee
  • Publication number: 20210032743
    Abstract: Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.
    Type: Application
    Filed: February 26, 2019
    Publication date: February 4, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Sonia CASTELLANOS ORTEGA, Jan VERHOEVEN, Joost Wilhelmus Maria FRENKEN, Pavlo ANTONOV, Nicolaas TEN KATE, Olivier Christian Maurice LUGIER
  • Publication number: 20210033979
    Abstract: A method of calibrating a projection system heating model to predict an aberration in a projection system in a lithographic apparatus, the method comprising passing exposure radiation through a projection system to expose one or more exposure fields on a substrate provided on a substrate table, making measurements of the aberration in the projection system caused by the exposure radiation, wherein the time period between measurements is less than the time period that would be taken to expose all exposure fields on the substrate.
    Type: Application
    Filed: January 28, 2019
    Publication date: February 4, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Martijn Cornelis SCHAAFSMA, Mhamed AKHSSAY, James Robert DOWNES
  • Patent number: 10908510
    Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Catharinus De Schiffart, Michael Jozef Mathijs Renkens, Gerard Van Schothorst, Andre Bernardus Jeunink, Gregor Edward Van Baars, Sander Frederik Wuister, Yvonne Wendela Kruijt-Stegeman, Norbert Erwin Therenzo Jansen, Toon Hardeman, George Arie Jan De Fockert, Johan Frederik Dijksman
  • Patent number: 10908515
    Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Tanbir Hasan, Vivek Kumar Jain, Stefan Hunsche, Bruno La Fontaine
  • Patent number: 10908514
    Abstract: A metrology apparatus is disclosed that has an optical system to focus radiation onto a structure and directs redirected radiation from the structure to a detection system. The optical system applies a plurality of different offsets of an optical characteristic to radiation before and/or after redirected by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution. The detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution. Each radiation intensity corresponds to a different one of the plurality of different offsets.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Janneke Ravensbergen, Duygu Akbulut, Nitesh Pandey, Jin Lian
  • Patent number: 10908513
    Abstract: Disclosed are a method, computer program and a metrology apparatus for measuring a process effect parameter relating to a manufacturing process for manufacturing integrated circuits on a substrate. The method comprises determining for a structure, a first quality metric value for a quality metric from a plurality of measurement values each relating to a different measurement condition while cancelling or mitigating for the effect of the process effect parameter on the plurality of measurement values and a second quality metric value for the quality metric from at least one measurement value relating to at least one measurement condition without cancelling or mitigating for the effect of the process effect parameter on the at least one measurement value. The process effect parameter value for the process effect parameter can then be calculated from the first quality metric value and the second quality metric value, for example by calculating their difference.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Marc Johannes Noot, Simon Gijsbert Josephus Mathijssen, Kaustuve Bhattacharyya, Jinmoo Byun, Hyun-Su Kim, Won-Jae Jang, Timothy Dugan Davis
  • Patent number: 10908496
    Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Maxim Aleksandrovich Nasalevich, Erik Achilles Abegg, Nirupam Banerjee, Michiel Alexander Blauw, Derk Servatius Gertruda Brouns, Paul Janssen, Matthias Kruizinga, Egbert Lenderink, Nicolae Maxim, Andrey Nikipelov, Arnoud Willem Notenboom, Claudia Piliego, Mária Péter, Gijsbert Rispens, Nadja Schuh, Marcus Adrianus Van De Kerkhof, Willem Joan Van Der Zande, Pieter-Jan Van Zwol, Antonius Willem Verburg, Johannes Petrus Martinus Bernardus Vermeulen, David Ferdinand Vles, Willem-Pieter Voorthuijzen, Aleksandar Nikolov Zdravkov
  • Patent number: 10908512
    Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Daan Maurits Slotboom, Michiel Kupers
  • Patent number: 10908518
    Abstract: A lithographic apparatus is provided. The lithographic apparatus includes a reticle and an electrostatic clamp configured to releasably hold the reticle. The electrostatic clamp includes a first substrate having opposing first and second surfaces, a plurality of burls located on the first surface and configured to contact the reticle, a second substrate having opposing first and second surfaces. The first surface of the second substrate is coupled to the second surface of the first substrate. A plurality of cooling elements are located between the first surface of the second substrate and the second surface of the first substrate. The cooling elements are configured to cause electrons to travel from the second surface of the first substrate to the first surface of the second substrate. Each cooling element is substantially aligned with a respective burl.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: February 2, 2021
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Santiago E. Delpuerto, Antonius Franciscus Johannes De Groot, Kenneth C. Henderson, Raymond Wilhelmus Louis Lafarre, Matthew Lipson, Louis John Markoya, Tammo Uitterdijk, Ronald Van Der Wilk, Johannes Petrus Martinus Bernardus Vermeulen
  • Patent number: 10908517
    Abstract: The invention relates to a setpoint generator for moving a patterning device of a lithographic apparatus, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the setpoint generator comprises a finite number of movement profiles for the patterning device, and wherein the setpoint generator is configured to select one of the finite number of movement profiles based on a desired movement profile and to output the selected movement profile as a setpoint for the patterning device.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: February 2, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Jean-Philippe Xavier Van Damme, Laurentius Johannes Adrianus Van Bokhoven, Petrus Franciscus Van Gils, Gerben Pieterse
  • Publication number: 20210026256
    Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 28, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Martin Jacobus Johan JAK, Kaustuve BHATTACHARYYA
  • Patent number: 10904994
    Abstract: A supply system for an extreme ultraviolet (EUV) light source includes an apparatus configured to be fluidly coupled to a reservoir configured to contain target material that produces EUV light in a plasma state, the apparatus including two or more target formation units, each one of the target formation units including: a nozzle structure configured to receive the target material from the reservoir, the nozzle structure including an orifice configured to emit the target material to a plasma formation location. The supply system further includes a control system configured to select a particular one of the target formation units for emitting the target material to the plasma formation location. An apparatus for a supply system of an extreme ultraviolet (EUV) light source includes a MEMS system fabricated in a semiconductor device fabrication technology, and the MEMS system including a nozzle structure configured to be fluidly coupled to a reservoir.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: January 26, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Koen Gerhardus Winkels, Georgiy O. Vaschenko, Theodorus Wilhelmus Driessen, Johan Frederik Dijksman, Bastiaan Lambertus Wilhelmus Marinus van de Ven, Wilhelmus Henricus Theodorus Maria Aangenent