Abstract: The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.

Abstract: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

Abstract: A method and a computer program product that relates to lithographic apparatuses and, processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product includes determining contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process, wherein the results are measured using a plurality of different substrate measurement recipes.

Abstract: An apparatus for removing particles from a clamp, the apparatus being arrangeable in proximity of the clamp and comprising an insulating portion, a supporting portion, at least a part or all of the insulating portion being arranged on the supporting portion, wherein the supporting portion is configured such that when a voltage is applied to the supporting portion of the apparatus and/or to an electrode of the clamp, the supporting portion acts as an electrode to allow an electric field to be generated between the apparatus and the clamp for removal of the particles from the clamp.

Abstract: A method of dislodging contamination from a part of an apparatus used in a patterning process, the method including: providing a cleaning substrate into contact with the part of the apparatus while the part is attached to the apparatus, the cleaning substrate comprising a material configured to chemically react with the contamination; and dislodging contamination on the part of the apparatus by chemical reaction between the material and the contamination.

Abstract: A method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method may include determining a placement metric for each feature, the placement metric including a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may include a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric including a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

Abstract: A measurement system to determine a deformation of an object having a front surface, a back surface and a pattern. The measurement system includes a processor system and an interferometer system. The interferometer system has a radiation source and a detector system. The source is configured to emit, to each of a plurality of locations on the object, measurement beams in order to generate, at each of the respective plurality of locations, reflected measurement beams off the front and back surfaces of the object respectively. The detector system is configured to receive the respective reflected measurement beams and output signals representative of the received reflected measurement beams to the processor system. The processor system is configured to receive the signals; determine, based on the signals as received, a characteristic of the object; and determine a deformation of the pattern based on the characteristic.

Abstract: Disclosed is a method of, and associated metrology apparatus for, determining a characteristic of a target on a substrate. The method comprises obtaining a plurality of intensity asymmetry measurements, each intensity asymmetry measurement relating to a target formed on the substrate and determining a sensitivity coefficient corresponding to each target, from the plurality of intensity asymmetry measurements. Using these sensitivity coefficients a representative sensitivity coefficient is determined for said plurality of targets or a subset greater than one thereof. The characteristic of the target can then be determined using the representative sensitivity coefficient.

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

Abstract: A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

Abstract: A positioning system for positioning an object. The positioning system includes a stage, a balance mass and an actuator system. The stage is for holding the object. The actuator system is arranged to drive the stage in a first direction while driving the balance mass in a second direction opposite to the first direction. The stage is moveable in the first direction in a movement range. When the stage is moving in the first direction and is at an end of the movement range, the positioning system is arranged to collide the stage frontally into the balance mass.

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

Abstract: Tooling for a mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

Abstract: Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.

Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Abstract: A lithographic apparatus comprises a projection system comprising position sensors to measure a position of optical elements of the projection system. The positions sensors are referenced to a sensor frame. Damping actuators damp vibrations of the sensor frame. A control device drives the actuators and is configured to derive sensor frame damping force signals from at least one of the acceleration signals and the sensor frame position signals, derive an estimated line of sight error from the position signals, determine actuator drive signals from the sensor frame damping force signals and the estimated line of sight error, drive the actuators using the actuator drive signals to dampen the sensor frame and to at least partly compensate the estimated line of sight error.

Abstract: The invention relates to a lithographic apparatus comprising: an actuation system for positioning an object; a control unit (CU) for controlling the actuation system; and a cooling system for cooling the actuation system, wherein the actuation system comprises a coil assembly (CA) including one or more coils (CO) as force generating members, wherein the cooling system comprises cooling element (CE) interacting with the coil assembly for cooling the coil assembly, and wherein the control unit is configured to control a temperature of the one or more coils to keep a magnitude of cyclic stress below a predetermined value.