Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

Abstract: Provided is an apparatus for and method of controlling formation of droplets (102a, b) used to generate EUV radiation that comprise an arrangement producing a laser beam directed to an irradiation region and a droplet source. The droplet source (92) includes a fluid exiting an nozzle (98) and a sub-system having an electro-actuatable element (104) producing a disturbance in the fluid (96). The droplet source produces a stream (100) that breaks down into droplets that in turn coalesce into larger droplets as they progress towards the irradiation region. The electro-actuatable element is driven by a hybrid waveform that controls the droplet generation/coalescence process. Also disclosed is a method of determining the transfer function for the nozzle.

Abstract: A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.

Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

Abstract: Grouping image patterns to determine wafer behavior in a patterning process with a trained machine learning model is described. The described operations include converting, based on the trained machine learning model, one or more patterning process images including the image patterns into feature vectors. The feature vectors correspond to the image patterns. The described operations include grouping, based on the trained machine learning model, feature vectors with features indicative of image patterns that cause matching wafer and/or wafer defect behavior in the patterning process. The one or more patterning process images include aerial images, resist images, and/or other images. The grouped feature vectors may be used to: detect potential patterning defects on a wafer during a lithography manufacturability check as part of optical proximity correction, adjust a mask layout design, and/or generate a gauge line/defect candidate list, among other uses.

Abstract: A stage apparatus for a particle-beam apparatus is disclosed. A particle beam apparatus may comprise a conductive object and an object table, the object table being configured to support an object. The object table comprises a table body and a conductive coating, the conductive coating being provided on at least a portion of a surface of the table body. The conductive object is disposed proximate to the conductive coating and the table body is provided with a feature proximate to an edge portion of the conductive coating. Said feature is arranged so as to reduce an electric field strength in the vicinity of the edge portion of the conductive coating when a voltage is applied to both the conductive object and the conductive coating.

Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.

Abstract: An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate, a cooling apparatus located in use above the substrate adjacent to the exposure area, the cooling apparatus being configured to remove heat from the substrate during use, a plasma vessel located below the cooling apparatus with its opening facing towards the cooling apparatus, and a gas supply for supplying gas to the plasma vessel and an aperture for receipt of a radiation beam. In use, supplied gas and a received radiation beam react to form a plasma within the plasma vessel that is directed towards a surface of the cooling apparatus which faces the opening of the plasma vessel.

Abstract: A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

Abstract: A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.

Abstract: A lithographic apparatus comprising a substrate storage module having a controllable environment for protecting lithographically exposed substrates from ambient air. The substrate storage module is configured to store at least twenty substrates and the substrate storage module is an integral part of the lithographic apparatus. The substrate storage module may be used to protect substrates from ambient air during stitched lithographic exposures.

Abstract: Methods and associated apparatus for reconstructing a free-form geometry of a substrate, the method including: positioning the substrate on a substrate holder configured to retain the substrate under a retaining force that deforms the substrate from its free-form geometry; measuring a height map of the deformed substrate; and reconstructing the free-form geometry of the deformed substrate based on an expected deformation of the substrate by the retaining force and the measured height map.

Abstract: Radiation source assemblies and methods for generating broadened radiation by spectral broadening. A radiation source assembly includes a pump source configured to emit modulated pump radiation at one or more wavelengths. The assembly further has an optical fiber configured to receive the modulated pump radiation emitted by the pump source, the optical fiber including a hollow core extending along at least part of a length of the fiber. The hollow core is configured to guide the received radiation during propagation through the fiber. The radiation emitted by the pump source includes first radiation at a pump wavelength, and the pump source is configured to modulate the first radiation for stimulating spectral broadening in the optical fiber.

Abstract: A measurement system for measuring an input electrical current (Ics) from a current source (CS) and generating a current measurement signal, comprising a current measuring circuit (70) having a first input terminal (72) connected to the current source and an output terminal (74) for providing the current measurement signal. The current measuring circuit further comprises one or more power supply terminals (75, 76) arranged to receive one or more voltages from a power supply (77a, 77b) for powering the current measuring circuit. The current measuring circuit also comprises a first voltage source (VD) coupled to the one or more power supply terminals, the first voltage source providing a disturbance voltage to the one or more power supply terminals, the disturbance voltage representing a voltage at the first input terminal.

Abstract: An apparatus for transferring a target, such as a substrate or a substrate support structure onto which a substrate has been clamped, from a substrate transfer system to a vacuum chamber of a lithography system. The apparatus comprises a load lock chamber for transferring the target into and out of the vacuum chamber. The load lock chamber comprises a first wall with a first passage providing access between a robot space and the interior of the load lock chamber, a second wall with a second passage providing access between the interior of the load lock chamber and the vacuum chamber, and plurality of handling robots for transferring the targets comprising: a first handling robot movable within the robot space to access the substrate transfer system and the first passage; and a second handling robot movable within the load lock chamber to access the first passage and the second passage.