Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

Abstract: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

Abstract: A method for solid material detection in a medium includes receiving an exhaust gas downstream with respect to a workpiece from which a photoresist material is removed. An electromagnetic circuit is configured to include the exhaust gas, the exhaust gas is excited with electromagnetic energy and an impedance value of the electromagnetic circuit is determined, wherein the impedance value corresponds to an amount of solid material within the exhaust gas.

Abstract: Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

Abstract: A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.

Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

Abstract: An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece.

Abstract: A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.

Abstract: A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion.

Abstract: A method of doping a semiconductor body is provided herein. In one embodiment, a semiconductor body is exposed to an activated hydrogen gas for a predetermined time period and temperature. The activated hydrogen gas that is configured to react with a surface of a semiconductor body. The activated hydrogen gas breaks existing bonds in the substrate (e.g., silicon-silicon bonds), thereby forming a reactive layer comprising weakened (e.g., silicon-hydrogen (Si—H) bonds, silanol (Si—OH) bonds) and/or dangling bonds (e.g., dangling silicon bonds). The dangling bonds, in addition to the easily broken weakened bonds, comprise reactive sites that extend into one or more surfaces of the semiconductor body. A reactant (e.g., n-type dopant, p-type dopant) may then be introduced to contact the reactive layer of the semiconductor body. The reactant chemically bonds to reactive sites comprised within the reactive layer, thereby resulting in a doped layer within the semiconductor body comprising the reactant.

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract: A system, apparatus, and method is provided for preventing condensation on a workpiece in an end station of an ion implantation system. A workpiece is cooled in a first environment, and is transferred to a load lock chamber that is in selective fluid communication with the end station and a second environment, respectively. A workpiece temperature monitoring device is configured to measure a temperature of the workpiece in the load lock chamber. An external monitoring device measures a temperature and relative humidity in the second environment, and a controller is configured to determine a temperature of the workpiece at which condensation will not form on the workpiece when the workpiece is transferred from the load lock chamber to the second environment.

Abstract: An apparatus and method are provided for selecting materials for forming an electrostatic clamp. The electrostatic clamp has a backing plate having a first coefficient of thermal expansion, wherein the backing plate provides structural support and rigidity to the electrostatic clamp. The electrostatic clamp further has a clamping plate having a clamping surface associated with contact with a workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith. The clamping plate is bonded, attached or grown to the backing plate, wherein minimal deflection of the clamping plate is evident across a predetermined temperature range. The first coefficient of thermal expansion and second coefficient of thermal expansion, for example, are substantially similar, and vary by no greater than a factor of three.

Abstract: A workpiece scanning system is provided having a scan arm that rotates about a first axis and a chilled end effector rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis.

Abstract: An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece.

Abstract: Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable.

Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

Abstract: Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.