Abstract: An airflow management system and/or method used in particle abatement in semiconductor manufacturing equipment. In particular, the apparatus disclosed is capable of creating and managing a carefully controlled particle free environment for the handling of semiconductor wafers or similar articles. The apparatus is particularly suited to be used as an interface between an equipment front end module (EFEM) and a vacuum loadlock chamber or other such article of process equipment. The apparatus also enables relative motion between enclosures while maintaining a particle free environment utilizing a moving air diffuser mounted to an interface panel.

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract: Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

Abstract: A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.

Abstract: An apparatus configured to provide simultaneous plasma and electromagnetic irradiation of a workpiece within the same process chamber, thereby providing processes that permit simultaneous plasma and electromagnetic irradiation within the same atmosphere as may be desired for some applications.

Abstract: A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.

Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

Abstract: A cold trap filter and method is provided for filtering chemical species from a vacuum system of an ion implantation system. A canister is in fluid communication with an exhaust of a high vacuum pump and an intake of a roughing pump used for evacuating an ion source chamber. One or more paddles are positioned within the canister, wherein each paddle has a cooling line in fluid communication with a coolant source. The coolant source passes a coolant through the cooling line, thus cooling the one or more paddles to a predetermined temperature associated with a condensation or deposition point of the chemical species, therein condensing or depositing the chemical species on the paddles while not interfering with a vacuum capacity of the high vacuum and roughing pumps. The paddles can also be electrically biased to electrostatically attract the chemical species to the paddles in one or more biasing steps.

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract: An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract: Methods for implanting an aromatic carbon molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing aromatic carbon molecule in an ion source to create a plasma and produce aromatic carbon molecules and its ionized lower mass byproducts. The ionized aromatic carbon molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized aromatic carbon molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract: Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract: Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece. The ion implanter also includes an array of absorption and radiation elements arranged to absorb energy of the scanned ion beam and radiate at least some of the absorbed energy away from the propagation direction. A detection element (e.g., an infrared detector) is arranged to detect energy (e.g., in the form of heat) radiated by the array of absorption and radiation elements and to determine a beam profile of the scanned ion beam based on the detected energy.

Abstract: A method and apparatus is provided for reducing unwanted isotopes of an ion implantation species from an ion beamline. The apparatus herein disclosed is a mass analysis variable exit aperture that selectively reduces the size of an exit aperture as seen by an ion beam. In one embodiment, the variable mass analysis exit aperture is located within a mass analyzer at a position upstream of a resolving aperture and effectively limits the size of an exit aperture so as to allow passage of desired implantation isotope(s) while blocking the passage of unwanted implantation isotopes. In one particular embodiment, the mass analysis variable exit aperture has a mechanical drive mechanism that enables a blocking structure to be moved into the path of an ion beam in a graduated fashion as guided by a control unit that operates based upon one or more characteristics of the ion beam.

Abstract: The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load.

Abstract: A cold trap filter and method is provided for filtering chemical species from a vacuum system of an ion implantation system. A canister is in fluid communication with an exhaust of a high vacuum pump and an intake of a roughing pump used for evacuating an ion source chamber. One or more paddles are positioned within the canister, wherein each paddle has a cooling line in fluid communication with a coolant source. The coolant source passes a coolant through the cooling line, thus cooling the one or more paddles to a predetermined temperature associated with a condensation or deposition point of the chemical species, therein condensing or depositing the chemical species on the paddles while not interfering with a vacuum capacity of the high vacuum and roughing pumps. The paddles can also be electrically biased to electrostatically attract the chemical species to the paddles in one or more biasing steps.