Abstract: The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n=1-6. The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Abstract: [Problem] An object of the present invention is to provide a composite of metal oxide nanoparticles and a silsesquioxane polymer, which can form a high-quality cured film wherein aggregation and the like of metal oxide do not occur during a curing process and the metal oxide is uniformly dispersed. [Means for Solution] Provided are: a method of producing a composite of metal oxide nanoparticles and a silsesquioxane polymer, the method comprising reacting a silsesquioxane polymer having a silanol group at a terminal, or a silane monomer with metal oxide nanoparticles having a hydroxyl group or an alkoxy group on the surface in an aqueous solvent in the presence of a phase transfer catalyst; and a composite produced by the method.

Abstract: The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.

Abstract: There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.

Abstract: Disclosed are a rinse solution for lithography comprising water and a nonionic surfactant represented by the formula (I) (R1 and R2 may be the same as or different from each other and represent a hydrogen atom or a methyl group, R3 and R4 may be the same as or different from each other and represent a hydrogen atom, a methyl group or an ethyl group, R5 represents a hydrocarbon group having 2 to 5 carbon atoms, in which one or more of a double bond or triple bond are contained, or a phenylene group, and R6 and R7 may be the same as or different from each other and represent a hydrogen atom or a methyl group) and a method for forming a resist pattern by rinsing the resist pattern obtained by exposing and developing a photosensitive resist with the rinse solution for lithography described above.

Abstract: To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.

Abstract: [Problem] To provide a film forming composition and a method for preparing a film with which it is possible to form a film having excellent gas barrier performance. [Means for Solution] Disclosed is a film forming composition comprising: a polysiloxane that does not include a hydroxyl group or a carboxyl group; a polysilazane; and an organic solvent. Also disclosed is a method for preparing a film comprising: coating a substrate with said composition; and exposing the same to light.

Abstract: The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with underlayers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.

Abstract: The present invention relates to a novel spin coatable composition comprising (a) metallosilicic acid; (b) at least one compound comprising two or more 4-hydroxyphenyl groups; and, c) a solvent. The component b) can be a 4-hydroxyphenyl compound of structure (I) wherein W is a linking group chosen from the group consisting of an organic linking moiety, a heteroatom containing linking moiety and a direct valence bond, m is a positive integer of 1 and n is a positive integer equal to 1 or and Ri, Rii, Riii and Riv are independently chosen substituents from a group consisting of hydrogen, (C1-C6) alkyl, (C1-C6) alkoxy, (C6-C20) aryl, halides (such as Cl, I, F), hydroxyl, alkylcarbonyl (alkyl-C(?O)—), alkylcarbonyloxy (alkyl-C(?O)—O—), alkyloxycarbonyl (alkyl-O—C(?O)—), alkyloxycarbonyloxy (alkyl-O—C(?O)—O—) and mixtures of these; and a solvent. The present invention further relates to processes using the novel compositions.

Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern.

Abstract: [Problem] An object of the present invention is to provide a composite of silicon oxide nanoparticles and a silsesquioxane polymer, from which a cured film having a low refractive index can be formed inexpensively. [Means for Solution] Provided are a method of producing a composite of silicon oxide nanoparticles and a silsesquioxane polymer, the method comprising reacting a silsesquioxane polymer having a silanol group at a terminal or a silane monomer with silicon oxide nanoparticles having a hydroxyl group or an alkoxy group on the surface in a mixed solvent of an aqueous solvent and an organic solvent in the presence of a phase transfer catalyst, and a composite produced by the method.

Abstract: The invention relates to the use of specific organopolysilazanes as an encapsulation material for light emitting diodes (LED). The organopolysilazane polymers act as insulating filling materials and are stable over temperature and over exposure to ambient UV radiation. The encapsulating material has good thermal stability against discoloration to yellow by aging even at high temperatures which is a key factor for the long lifetime of an LED encapsulant and the LED performance.

Abstract: The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

Abstract: The present invention provides a dendrimer compound capable of improving critical dimension uniformity and DOF (depth of focus) margin, and also provides a composition capable of forming an underlayer film. The dendrimer compound comprises a branched chain having a central aromatic skeleton and amide or ester bond, and is contained in the composition for forming an underlayer film.

Abstract: The present disclosure relates to soluble, multi-ligand-substituted metal compounds with improved stability as well as compositions made from them and methods of their use.

Abstract: The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to compounds having the following structure (I) wherein M is a metal and n is 1 to 20, and wherein at least one of R1, R2, R3, and R4 is i) and at least at least one of R1, R2, R3, and R4 is ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable compositions of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate.

Abstract: The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where R1 to R5 are independently chosen from the group consisting of H and C1-C6 alkyl; R6 is chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C1-C8) and fluoroalkyl (C1-C8) and W is a C2-C6 alkylene spacer.

Abstract: The present invention relates to a novel absorbing antireflective coating composition comprising a novel crosslinkable polymer comprising at least one repeat unit (A) having structure (1), at least one repeat unit (B) having a structure (2), and at least one repeat unit (C) having structure (3) where D is a direct valence bound or C(R1)(R2) methylene moiety where R1 and R2 are independently H, C1-C8 alkyl, C3-C24 cycloalkyl or C6-C24 aryl; Ari, Arii, Ariii and Ariv are independently phenylenic and naphthalenic moiety, R3 and R4 are independently hydrogen or C1-C8 alkyl; and R5 and R6 are independently hydrogen or C1-C8 alkyl; and a solvent. The invention also relates to a process for forming an image using the novel antireflective coating composition.

Abstract: The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a dielectric barrier layer (2) based on a polysilazane and a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the copper-indium selenide (CIGSe) type.

Abstract: The present disclosure relates to spin-on compositions containing at least one metal oxide dicarboxylate and an organic solvent into which the metal oxide dicarboxylate is soluble or colloidally stable. The dicarboxylate is capable of decomposing during heat treatment to give a cured metal oxide film. The present disclosure also relates to method of using the spin-on compositions.