Abstract: A method of forming via-first, dual damascene interconnect structures by using a gap-filling, bottom anti-reflective coating material whose thickness is easily controlled by a solvent is provided. After application to a substrate, the bottom anti-reflective coating is partially cured by baking at a low temperature. Next, a solvent is dispensed over the coated wafer and allowed to contact the coating for a period of time. The solvent removes the bottom anti-reflective coating at a rate controlled by the bottom anti-reflective coating's bake temperature and the solvent contact time to yield a bottom anti-reflective coating thickness that is thin, while maintaining optimum light-absorbing properties on the dielectric stack. In another possible application of this method, sufficient bottom anti-reflective coating may be removed to only partially fill the vias in order to protect the bottoms of the vias during subsequent processing.

Abstract: The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet-developable bottom anti-reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dye-filled and dye-attached compositions for use in the anti-reflective coatings. The anti-reflective coatings are thermally crosslinkable and photochemically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.

Abstract: New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.

Abstract: New baffles and methods of using these baffles are provided. The baffles comprise a body having an edge wall configured to direct the flow of a composition against a substrate (e.g., silicon wafer) edge. The edge wall comprises a vertical surface, a curved sidewall coupled to the vertical surface, and a lip coupled to the curved sidewall. A preferred baffle is annular in shape and formed from a synthetic resinous composition. Even more preferably, the baffle is not formed of a metal. The inventive methods comprise positioning the baffle adjacent a substrate during a spin coating process so that the edge wall causes the composition to cover the edges of the substrate and preferably a portion of the back side of the substrate.

Abstract: New lithographic compositions (e.g., for use as middle layers in trilayer processes) are provided. In one embodiment, the compositions comprise an organo-silicon polymer dispersed or dissolved in a solvent system, and preferably a crosslinking agent and a catalyst. In another embodiment, the organo-silicon polymer is replaced with a polyhedral oligomeric silsesquioxane-containing polymer and/or a polyhedral oligomeric silsesquioxane. In either embodiment, the polymer and/or compound should also include —OH groups for proper cross-linking of the composition. When used as middle layers, these compositions can be applied as very thin films with a very thin layer of photoresist being applied to the top of the middle layer. Thus, the underlying bottom anti-reflective coating is still protected even though the overall stack (i.e., anti-reflective coating plus middle layer plus photoresist) is still thin compared to prior art stacks.

Abstract: The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude.

Abstract: Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus producing a smaller dimension. The amount of pattern shrinkage is selectively controlled by controlling the deposition rate to provide the desired final structure dimension. A wide variety of organic films is used as materials for these films. The inventive methods are applicable to any patterning technique used in lithography to provide a reduction in pattern sizes. Examples of the applicable device levels include the production of gate layers, ion implantation of active device layers and substantive metal layers, dielectric patterning, interconnect processes produced by damascene, dual damascene, backend packaging layers, and devices requiring multiple layers deposited by electrodeposition, CVD or sputtering.

Abstract: Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the recessed surface, while it also acts as a fill material to planarize via holes on the substrate.

Abstract: A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion etch (RIE). The protective layer is photosensitive and anti-reflective. An extremely thin photoresist layer is coated on top of the protective layer. The stack of the films is selectively exposed to actinic radiation at a wavelength determined by the sensitivities of the protective layer and photoresist layer. The latent images on the photoresist and protective layers resulting from the exposure are developed with a common alkaline developer. The three dimensional patterns of photoresist and underlying protective layer are formed simultaneously by the single exposure and single development. When the underlying substrate is etched by RIE, the protective layer is the masking layer, not the photoresist.

Abstract: A method of forming via-first, dual damascene interconnect structures by using a gap-filling, bottom anti-reflective coating material whose thickness is easily controlled by a solvent is provided. After application to a substrate, the bottom anti-reflective coating is partially cured by baking at a low temperature. Next, a solvent is dispensed over the coated wafer and allowed to contact the coating for a period of time. The solvent removes the bottom anti-reflective coating at a rate controlled by the bottom anti-reflective coating's bake temperature and the solvent contact time to yield a bottom anti-reflective coating thickness that is thin, while maintaining optimum light-absorbing properties on the dielectric stack. In another possible application of this method, sufficient bottom anti-reflective coating may be removed to only partially fill the vias in order to protect the bottoms of the vias during subsequent processing.

Abstract: Novel anti-reflective coatings comprising small molecules (e.g., less than about 5,000 g/mole) in lieu of high molecular weight polymers and methods of using those coatings are provided. In one embodiment, aromatic carboxylic acids are used as the chromophores, and the resulting compounds are blended with a crosslinking agent and an acid. Anti-reflective coating films prepared according to the invention exhibit improved properties compared to high molecular weight polymeric anti-reflective coating films. The small molecule anti-reflective coatings have high etch rates and good via fill properties. Photolithographic processes carried out with the inventive material result in freestanding, 110-nm profiles.

Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment the polymers of the composition include recurring monomers having the formulas where: (1) each R is individually selected from the group consisting of hydrogen, —OH, aliphatics, and phenyls; and (2) L is selected from the group consisting of —SO2— and —CR?2—, where each R? is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX3, where each X is individually selected from the group consisting of the halogens. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

Abstract: New compositions for use as high refractive index layers are provided. The compositions comprise a polyimide dispersed or dissolved in a solvent system. The polyimide can be prepared from commercially available dianhydrides and diamines. Preferred polymer include recurring monomers selected from the group consisting of The inventive compositions can form strong, thin films and have high refractive indices making them useful in a wide range of optical applications.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene, 2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 ?m or smaller) features.

Abstract: Novel processes of applying a thin, uniform, conformal organic polymeric film by a wide variety of deposition processes into lithography pattern substrates are provided. The inventive processes result in shrinking of the gaps in the lithography pattern equally, thus producing a smaller dimension. The amount of pattern shrinkage is selectively controlled by controlling the deposition rate to provide the desired final structure dimension. A wide variety of organic films is used as materials for these films. The inventive methods are applicable to any patterning technique used in lithography to provide a reduction in pattern sizes. Examples of the applicable device levels include the production of gate layers, ion implantation of active device layers and substantive metal layers, dielectric patterning, interconnect processes produced by damascene, dual damascene, backend packaging layers, and devices requiring multiple layers deposited by electrodeposition, CVD or sputtering.

Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. Preferred polymers include polycarbonates, polysulfonyl esters, polycarbonate sulfones, and mixtures thereof. The compositions can be applied to a silicon wafer or other substrate to form a cured or hardened layer which is initially insoluble in typical photoresist developing solutions. Upon exposure to light, the cured or hardened layers become soluble in photoresist developing solutions so that the layer can be selectively removed along with the developed photoresist layer, thus eliminating the need for a separate removal step.

Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.