Abstract: A current matching control apparatus for matching a plurality of current sources and a plurality of current sinks, the plurality of current sinks having a drive current value controlled by a drive processor in accordance with a reference control current and wherein each output of the plurality of current sinks are connected to a common output node; a feedback circuit having an input connected to the common output node and an output connected to the drive processor, wherein the feedback circuit is arranged to match a voltage at the common output node to a reference voltage by communicating a signal to the drive processor to adjust the reference control current.

Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.

Abstract: An organic light-emitting device comprising an anode; a cathode; and a first light-emitting layer between the anode and the cathode, wherein the first light-emitting layer comprises a fluorescent light-emitting material of formula (I): (Formula (I)) wherein Ar1 and Ar2 each independently in each occurrence is a substituted or unsubstituted aryl or heteroaryl group; n and m independently in each occurrence is 1, 2 or 3; R independently in each occurrence is a substituent; and Ar1 and Ar2 linked directly to the same N atom may be linked by a direct bond or a linking unit to form a ring; and wherein a first phosphorescent light-emitting material is provided in the first light-emitting layer or in a second light-emitting layer adjacent to the first light-emitting layer.

Abstract: An organic thin film transistor comprising source and drain electrodes, an organic semiconductor disposed in a channel region between the source and drain electrodes, a gate electrode, and a dielectric disposed between the source and drain electrodes and the gate electrode, wherein the source electrode and the drain electrode comprise at least one different physical and/or material property from each other.

Abstract: A method of forming a crosslinked polymer comprising the step of reacting a crosslinkable group in the presence of a polymer, wherein: the crosslinkable group comprises a core unit substituted with at least one crosslinkable unit of formula (I): the crosslinkable group is bound to the polymer or is a crosslinkable compound mixed with the polymer; Ar is aryl or heteroaryl which may be unsubstituted or substituted with one or more substituents independently selected from monovalent substituents and a divalent linking group linking the unit of formula (I) to the core unit; and R is independently in each occurrence H, a monovalent substituent or a divalent linking group linking the unit of formula (I) to the core unit, with the proviso that at least one R is not H.

Abstract: An organic semiconductor composition comprises at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device comprising a composition without the small molecule crystallization modifier.

Abstract: A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable.

Abstract: An organic light-emitting device comprises a first electrode, a second electrode and at least one light-emitting layer between the first and second electrodes wherein the device comprises a plurality of light-emitters that together provide a source of white light. A first light-emitting layer comprises a host material and a first light-emitter of the plurality of light-emitters that emits light having a peak photo luminescent wavelength in the range of 580-610 nm; and wherein a LUMO of the first light-emitter is no more than 0.2 eV further from vacuum than a LUMO level of the host material.

Abstract: Disclosed is a crosslinkable light-emitting composition comprising at least one host material, at least one phosphorescent light-emitting dopant, a first crosslinker comprising an unsaturated carbon-carbon bond group and a second crosslinker comprising a ring system capable of undergoing ring-opening crosslinking.

Abstract: This invention relates to active matrix OLED (Organic Light Emitting Diode) displays, in particular to display panels with integrated negative capacitance circuits and to active capacitance compensation. We describe an active matrix OLED display comprising a glass panel bearing a plurality of lines of OLED pixels, each with an associated active matrix driver circuit having a programming connection for programming a brightness of the associated OLED, programming connections of a line of pixels being connected to a programming line of said display, and wherein said active matrix OLED display further comprises a plurality of capacitors on said glass panel, each having a first plate connected to an end of a respective said programming line and having a second plate for connecting to a negative capacitor circuit to compensate for a capacitance of said programming line.

Abstract: A method of forming a layer of an electronic device, for example an organic light-emitting device, the method comprising the step of depositing a precursor layer comprising a compound of formula (I) and reacting the compound of formula (I) in a ring-opening addition reaction: Core-(Reactive Group)n??(I) wherein Core is a non-polymeric core group; and each Reactive Group, which may be the same or different in each occurrence, is a group of formula (II): wherein Sp1 independently in each occurrence represents a spacer group; w independently in each occurrence is 0 or 1; Ar in each occurrence independently represents an aryl or heteroaryl group; R1 in each occurrence independently represents H or a substituent, with the proviso that at least one R1 is a substituent; n is at least 1; and * is a point of attachment of the group of formula (II) to the Core; and wherein the compound of formula (I) reacts with itself or with a non-polymeric co-reactant.

Abstract: A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode.

Abstract: A light-emitting composition comprising a mixture of a fluorescent light-emitting material a triplet-accepting copolymer comprising a triplet-accepting repeat unit and a repeat unit of formula (I): wherein A is a divalent group; R1 independently in each occurrence is a substituent; R2 in each occurrence is H or a substituent; and x independently in each occurrence is 0, 1, 2 or 3.

Abstract: A composition comprising a polymer and a phosphorescent material wherein the polymer comprises repeat units of formula (I): wherein A is a heteroaryl group containing a nitrogen atom, and A may be unusubstituted or substituted with one or more substituents; R1 in each occurrence is independently a substituent; and n is 0, 1, 2, 3 or 4.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A polymer comprising repeat units of formula (I) and one or more co-repeat units: Ar1 in each occurrence independently represent an aryl or heteroaryl group; R1 and R2 in each occurrence independently represent a substituent; p independently in each occurrence is 0 or a positive integer; Sp represents a spacer group comprising at least one carbon or silicon atom spacing the two groups Ar1 apart; and each group Ar1 is bound to an aromatic group of a co-repeat unit. The polymer may form a charge-transporting layer of an OLED or may be a host material used with a luminescent dopant in a light-emitting layer of an OLED.

Abstract: A method of forming a top-gate transistor over a substrate comprises: forming a source and a drain electrode; forming an organic stack over the source and drain electrodes comprising an organic semiconductor layer and an organic dielectric layer over the organic semiconductor layer; forming a gate bi-layer electrode comprising a first gate layer of a first material and a second gate layer of a different second material; selectively depositing regions of a mask material over the gate bi-layer electrode; performing a first plasma etch step to remove portions of the first gate layer using the mask material as a mask; and performing a second plasma etch step to remove portions of the second gate layer and organic stack using the first gate layer as a mask, thereby patterning the gate bi-layer electrode and the organic stack.

Abstract: An unsubstituted or substituted phosphorescent compound of formula (I): Wherein: M is a transition metal; L in each occurrence is independently a mono- or poly-dentate ligand; R8 is H or a substituent; R9 and R10 are each independently selected from the group consisting of branched, linear or cyclic C1-20 alkyl wherein non-adjacent C atoms of the C1-20 alkyl may be replaced with —O—, —S—, —NR12—, —SiR122— or —COO— and one or more H atoms may be replaced with F or —NR122, wherein R12 is H or a substituent; R11 in each occurrence is independently H or a substituent, wherein two groups R11 may be linked to form a ring; x is at least 1; y is 0 or a positive integer; and z1, z2 and z3 are each independently 0 or a positive integer.

Abstract: An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.

Abstract: The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL.