Abstract: This invention generally relates to organic electronic devices and to methods for their fabrication. More particularly we will describe organic thin film transistor (TFT) structures and their fabrication. An organic electronic device, the device comprising: a substrate supporting a first electrode; a spacer structure over said substrate; a second electrode over said spacer structure and at a height above said first electrode; and a layer of organic semiconducting material over said first and second electrodes to provide a conducting channel between said first and second electrodes; and wherein a majority of said first electrode is laterally positioned to one side of said channel and a majority of said second electrode is laterally positioned to the other side of said channel.

Abstract: An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.

Abstract: A printing method for use in fabrication of an electronic unit comprising one or more lines of a regularly repeating structural feature formed over a substrate, the structural feature repeating over a regular interval along each line. The method comprises: using a first print-head arrangement to print portions of a composition at a first pitch along each of the lines; and using a second print-head arrangement to print portions of the composition at a second pitch along each of the lines; such that the first and second pitches together produce a beating pattern along each of the lines, having a beating wavelength matched to the interval of the regularly repeating structural feature.

Abstract: A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material.

Abstract: The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

Abstract: A species for use, for example, in a charge transfer layer of a photovoltaic device, the species comprising an acceptor group to which is fused a tuning group. The species can be a small molecule, polymer or oligomer, and monomers for producing said polymer, photovoltaic devices comprising said species, and methods for producing said device, are also provided.

Abstract: The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.

Abstract: Light-emitting and/or charge transporting polymers, methods of making the same, and organic light emitting devices comprising such polymers, the polymers comprising a repeat unit of formula (I): —(Ar)q-Sp-CT-Sp-(Ar)q—??(I) in which CT represents a conjugated charge-transporting group, each Ar independently represents an optionally substituted aryl or heteroaryl group, q is at least 1, and each Sp independently represents a spacer group forming a break in conjugation between Ar and CT.

Abstract: An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.

Abstract: An organic electroluminescence element having a cathode as a top electrode, and excelling in luminance efficiency, drive voltage, and operational life is provided. The organic electroluminescence element includes an anode over a substrate and a luminescent layer over the anode. The luminescent layer comprises an organic material. An electron injection layer is over the luminescent layer for injecting electrons into the luminescent layer. The electron injection layer is a metal including at least one of an alkaline metal and an alkaline earth metal. A fullerene layer is over the electron injection layer and includes fullerenes and at least one of an alkaline metal and an alkaline earth metal. The at least one of the alkaline metal and the alkaline earth metal included in the fullerene layer has a lower work function than a lowest unoccupied molecular orbit energy level of the fullerenes. A cathode is over the fullerene layer.

Abstract: An electronic device containing a hole transporting semiconductive polymer comprising a first repeat unit comprising a first nitrogen of a triarylamine in the polymer backbone and a second nitrogen of an arylamine pendant from the polymer backbone, characterised in that said semiconductive polymer performs the function of transporting holes to or from a semiconductive material in said device.

Abstract: This invention generally relates to improved methods of fabricating molecular electronic devices, in particular organic electronic devices such as organic light emitting diodes (OLEDs) by droplet deposition techniques such as ink jet printing. The invention also relates to molecular device substrates fabricated by and/or use in such methods. We describe an optical or optoelectronic device comprising a substrate and a plurality of discrete bank structures disposed on the substrate, wherein: each bank structure defines the perimeter of at least one well; one or more of a charge transporting, charge injecting, light-filtering and light-emitting material is disposed in the well; and at least one bank structure defines the perimeter of at least one well and does not extend to the perimeter of any adjacent well. Thus in embodiments no part of said perimeter defines the bank of more than one well.

Abstract: An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material.

Abstract: A composition for ink jet printing an opto-electrical device, the composition comprising: an electroluminescent or charge transporting organic material; and a high boiling point solvent having a boiling point higher than water.

Abstract: A semiconducting compound with the structure: where X1 and X2 are independently S, Se, SiR1R2, O, CR3R4, C2R5R6, N, NR7, where R1 to R7 independently comprise hydrogen, straight, branched or cyclic alkyl, akenyl or alkynyl groups, alkoxy, aryl, silyl or amino; where each of Ar1 to Ar4 is optional and independently comprises, if present, an aryl or heteroaryl group; and where Y1 to Y4 independently comprise hydrogen, reactive groups, optionally substituted straight, branched or cyclic alkyl, alkoxy, akenyl, alkynyl, amido or amino groups, optionally substituted aryl or heteroaryl where at least one of Y1 to Y4 does not comprise hydrogen; and methods and devices related thereto.

Abstract: This invention generally relates to methods and apparatus for driving passive matrix displays, in particular OLED (Organic Light Emitting Diode) displays. A method of driving a passive matrix electroluminescent display, the display having a plurality of rows and columns of emissive elements addressed by respective row and column electrodes, the method comprising: addressing said row electrodes, one at a time; and driving a set of said column electrodes while addressing each said row electrode; wherein said column electrode driving comprises driving said column electrodes to determine ratios of column drive signals to one another for said set of column electrodes; and wherein the method further comprises controlling an overall drive for said set of column electrodes to control a drive to said emissive elements in each said addressed row.

Abstract: This invention generally relates to methods, apparatus and computer program code for improved OLED (organic light emitting diode) display drive systems, in particular to compensate for burn-in. A method of compensating an OLED display device for burn-in of pixels of the OLED display, the method comprising: measuring a first voltage drop across at least one test pixel of the display; measuring a second voltage drop across at least one other pixel of the display; determining, from said first and second voltages and a from value (V1) representing a drive voltage increase for a loss in efficiency of said display due to burn-in, an estimated reduction in efficiency of said display due to burn-in; and compensating a drive to said display using said estimated efficiency reduction.

Abstract: A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet.

Abstract: We describe a method of driving an OLED display. The OLED display comprises a plurality of pixel driver circuits on chiplets, each pixel driver circuit comprising an output transistor for driving a first connection of an associated OLED pixel. A cascode transistor on the chiplet is coupled between the output transistor and the first connection of said associated OLED pixel. A power supply is provided to the chiplet, defining a chiplet voltage range. A second connection of the associated OLED pixel is connected to an OLED voltage outside said chiplet voltage range. The OLED pixel is then driven using the pixel driver circuit on the chiplet over an OLED voltage range greater than said chiplet voltage range. In some preferred embodiments a drain connection of the cascode transistor is set at a voltage below a ground or negative (Vss) power supply to a chiplet.

Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.