Abstract: Porous nano-imprint lithography templates may include pores, channels, or porous layers arranged to allow evacuation of gas trapped between a nano-imprint lithography template and substrate. The pores or channels may be formed by etch or other processes. Gaskets may be formed on an nano-imprint lithography template to restrict flow of polymerizable material during nano-imprint lithography processes.

Abstract: Imprint lithography templates having leading and trailing edge borders are provided that achieve zero-gap imprinting between adjacent fields with full-feature height features provided in the pattern exclusion zones (PEZ) located between such fields. The leading edge borders include dummy features, e.g., elongated features directionally oriented parallel to the mesa edge, while the trailing edge border includes a recess extending to the mesa edges. When used in a step-and-repeat process, the trailing edge border overlaps edge portions of an adjacent imprinted field that were previously patterned by the leading edge border of the template, producing full-feature height features in the pattern exclusion zones between such fields, and avoiding gaps or open areas between such fields that otherwise lead to non-uniformity of downstream processes such as etch processes and CMP.

Abstract: Imprint lithography template chucks and related systems and methods are provided that substantially maintain structural support functions while significantly enhancing imprint quality functions. The chucks incorporate dynamic vacuum seals to substantially reduce template contact during alignment and distortion correction while still providing good structural support upon separation.

Abstract: Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.

Abstract: Imprint lithography templates having alignment marks with highly absorptive material. The alignment marks are insensitive to the effects of liquid spreading and can provide stability and increase contrast to alignment system during liquid imprint filling of template features.

Abstract: Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.

Abstract: Described are systems and methods for formation of templates having alignment marks with high contrast material. High contrast material may be positioned within recesses of alignment marks.

Abstract: Systems and methods for controlling velocity of a contact line and height profile between a template and a substrate during imprinting of polymerizable material are described.

Abstract: Two-stage imprinting techniques capable of protecting fine patterned features of an imprint lithography template are herein described. In particular, such techniques may be used during fabrication of recessed high-contrast alignment marks for preventing deposited metal layers from coming into contact with fine features etched into the template.

Abstract: Imprint lithography methods that incorporate depositing droplets of polymerizable material in patterns that improve fill time performance when employing directionally-oriented imprint templates. The patterns are based on grid arrays formed of repeating sets of rows of droplets oriented along fast and slow axes, with droplets of each row offset along the slow axis relative to droplets in adjacent rows.

Abstract: In an imprint lithography system, a recessed support on a template chuck may alter a shape of a template positioned thereon providing minimization and/or elimination of premature downward deflection of outer edges of the template in a nano imprint lithography process.

Abstract: A polymerizable composition includes an organic modified silicate selected from the group consisting of silsesquioxanes having the composition RSiO1.5, partially condensed alkoxysilanes, organically modified silicates having the composition RSiO3 and R2SiO2, and partially condensed orthosilicates having the composition SiOR4, where R is an organic substituent; a decomposable organic compound; a photoinitiator; and a release agent. The composition polymerizes upon exposure to UV radiation to form an inorganic silica network, and the decomposable organic compound decomposes upon exposure to heat to form pores in the inorganic silica network. The composition may be used to form a patterned dielectric layer in an integrated circuit device. A metallic film may be disposed on the patterned dielectric layer and then planarized.

Abstract: Detection of periodically repeating nanovoids is indicative of levels of substrate contamination and may aid in reduction of contaminants on substrates. Systems and methods for detecting nanovoids, in addition to, systems and methods for cleaning and/or maintaining cleanliness of substrates are described.

Abstract: Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template.

Abstract: Edge field patterning of a substrate having full fields and partial fields may include patterning using a template having multiple mesas with each mesa corresponding to a field on the substrate. Polymerizable material may be deposited solely between the template and the full fields of the substrate. A non-reactive material may be deposited between the template and partial fields of the substrate.

Abstract: The present invention is directed towards a choice of the shape of the patterned fields for Level 0 (patterned by imprint or photolithography or e-beam, etc.) and Level 1 (patterned by imprint) such that these shapes when tessellated together eliminate the open areas causes by the moats.

Abstract: An imprint lithography imprinting stack includes a substrate and a polymeric adhesion layer adhered to the substrate. The polymeric adhesion layer includes polymeric components with an extended backbone length of at least about 2 nm. The backbones of the polymeric components may be substantially aligned in a planar configuration on the surface of the substrate, such that a thickness of the polymeric adhesion layer is less than about 2 nm.