Safe separation for nano imprinting
Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
Latest Canon Patents:
The present application claims priority to U.S. Provisional Application No. 61/328,353 filed Apr. 27, 2010, which is hereby incorporated by reference.
BACKGROUND INFORMATIONNano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate; therefore nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Pat. No. 6,936,194, all of which are hereby incorporated by reference herein.
An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable (polymerizable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
So that features and advantages of the present invention can be understood in detail, a more particular description of embodiments of the invention may be had by reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings only illustrate typical embodiments of the invention, and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
Referring to the figures, and particularly to
Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide translational and/or rotational motion along the x, y, and z-axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
Spaced-apart from substrate 12 is template 18. Template 18 may include a body having a first side and a second side with one side having a mesa 20 extending therefrom towards substrate 12. Mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Alternatively, template 18 may be formed without mesa 20.
Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations (e.g., planar surface). Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electrostatic, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Pat. No. 6,873,087. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
System 10 may further comprise a fluid dispense system 32. Fluid dispense system 32 may be used to deposit formable material 34 (e.g., polymerizable material) on substrate 12. Formable material 34 may be positioned upon substrate 12 using techniques, such as, drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. Formable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 22 and substrate 12 depending on design considerations. Formable material 34 may be functional nano-particles having use within the bio-domain, solar cell industry, battery industry, and/or other industries requiring a functional nano-particle. For example, formable material 34 may comprise a monomer mixture as described in U.S. Pat. No. 7,157,036 and U.S. Patent Publication No. 2005/0187339; both of which are herein incorporated by reference. Alternatively, formable material 34 may include, but is not limited to, biomaterials (e.g., PEG), solar cell materials (e.g., N-type, P-type materials), and/or the like.
Referring to
Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by formable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts formable material 34. After the desired volume is filled with formable material 34, source 38 produces energy 40, e.g., ultraviolet radiation, causing formable material 34 to solidify and/or cross-link conforming to a shape of surface 44 of substrate 12 and patterning surface 22, defining patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having a thickness t1 and residual layer having a thickness t2.
The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Pat. No. 6,932,934, U.S. Pat. No. 7,077,992, U.S. Pat. No. 7,179,396, and U.S. Pat. No. 7,396,475, all of which are hereby incorporated by reference in their entirety.
After formation of patterned layer 46, template 18 or mold 20 and features 50 and 52 of patterned layer 46 may be separated. Generally, the separation effort includes application of force to separate two “plate-like” structures (i.e., template 18 and substrate 12). Separation generally needs to be performed without causing excessive stress and/or strain to template 18 or mold 20 and/or imprinted features 50 and 52 of patterned layer 46. If template 18 and substrate 12 are pulled out in a relatively normal direction (e.g., without a tilting motion), the separation front moves inward (in radial) from a boundary of patterned layer 46. If additional tilting motion is applied, the separation front may move fairly in-parallel lines starting from a remote side from the tilting axis. Exemplary separation front schemes are described in further detail in U.S. Pat. No. 7,701,112, U.S. Patent Publication No. 2010/0096776, U.S. Pat. No. 7,635,445, and U.S. Pat. No. 7,635,263, which are hereby incorporated by reference in their entirety.
As illustrated in
The bending amounts of the template and substrates are inverse proportional to (ET3), wherein E is Young's modulus of the template or substrate material and T is the template or substrate thickness. Subsequently, the strain is a function of the bending multiplied with the thicknesses (T). Therefore, strain magnitude is inverse proportional to (ET2). Then, the ratio of two lateral strains (dt/db) at the interfacing surfaces of template 18a and substrate 12 is proportional to (EbTb2)/(EtTt2).
An optimal case may exist wherein strain ratio (dt/db) becomes 1 for template 18a and substrate 12a. When the template and the substrate have the same Young's modulus, the optimal configuration is when template 18a and substrate 12a have substantially similar thicknesses Tt and Tb respectively and is under near identical process conditions (e.g., back pressure, constraining boundary conditions). It should be noted that pressure is both positive and negative pressure (vacuum).
Having template 18a and substrate 12 constrained by means of different back supporting (i.e., adjusting the material stiffiness) or through the application of back pressure (positive pressure and/or vacuum), however, may significantly influence stress and/or lateral strain. For example, as illustrated in
Thickness of substrate 12a, however, is generally not a freely selectable variable. For example, semiconductor wafers of 8 inch or 12 inch diameters generally include an industry standard for thickness for substrate 12a. For compensation, thickness Tt of template 18a may be determined based on pre-selected thickness Tb for substrate 12a. Additionally, thickness Tt of template 18a may be determined based on material stiffness (e.g., Young's modulus), back pressure, and the like, such that lateral strain dt may be minimized or eliminated. Alternatively, back pressure of template 18a can be controlled such that lateral strain ratio (dt/db) may be approximately 1.
More specifically, back pressure Pt and/or Pb applied to the template and/or the substrate (see
Control of lateral strain of template 18a and substrate 12a through the selection of thicknesses Tt and/or Tb, control of back pressure, and/or selection of material stiffness may be applied to other separation methods including, but not limited to, those further described in U.S. Pat. No. 7,636,999, U.S. Pat. No. 7,701,112, U.S. Patent Publication No. 2010/0096776, U.S. Pat. No. 7,635,445, and U.S. Pat. No. 7,635,263.
Further modifications and alternative embodiments of various aspects will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only. It is to be understood that the forms shown and described herein are to be taken as examples of embodiments. Elements and materials may be substituted for those illustrated and described herein, parts and processes may be reversed, and certain features may be utilized independently, all as would be apparent to one skilled in the art after having the benefit of this description. Changes may be made in the elements described herein without departing from the spirit and scope as described in the following claims.
Claims
1. In a nanoimprint lithography system, a method comprising:
- providing a template in contact with a formed patterned layer on a substrate, the template and the substrate having lateral strains dt and db associated therewith, respectively, when subjected to a separation force;
- determining the difference between the lateral strains dt and db by either (i) measuring the lateral strain values during an initial separation, or (ii) modeling the lateral strain values during a theoretical separation to determine the difference between the dt and db values;
- based on the determined differences, determining the back pressure values which may be applied to the template, the substrate, or both such that the lateral strains dt and db are brought into a matching condition;
- adjusting the lateral strain of the template (dt) or the substrate (db) or both, while the template remains in contact with the formed patterned layer on the substrate, by applying the determined back pressure or pressures to the template or to the substrate or to both such that the lateral strains dt and db are matched when the template and substrate are subjected to the separation force; and
- applying the separation force to separate the template from the substrate while the determined back pressure or back pressures are applied to the template or to the substrate or both.
2. The method of claim 1 wherein the back pressure is applied prior to applying the separation force.
3. The method of claim 1 wherein the back pressure is applied concurrently with applying the separation force.
4. The method of claim 1 wherein the back pressure is only applied to the template.
5. The method of claim 1 wherein the back pressure is only applied to the substrate.
6. The method of claim 1 wherein the applied back pressure is positive pressure.
7. The method of claim 1 wherein the applied back pressure is negative pressure.
8. The method of claim 1 wherein positive back pressure is applied to the template and negative back pressure is applied to the substrate.
9. The method of claim 1 wherein negative back pressure is applied to the template and positive back pressure is applied to the substrate.
10. An imprint lithography method for separating an imprint lithography template from a patterned layer formed by contacting the imprint lithography template with a formable material deposited on a substrate and solidifying the formable material to form the patterned layer such that the template and the substrate have lateral strains dt and db associated therewith, respectively, when subsequently subjected to a separation force, the method comprising:
- determining the differences between lateral strains dt and db using an analytical model and/or finite element analysis;
- based on the determined differences between lateral strains dt and db, determining the amount of back pressure to apply to the template, the substrate, or both, such that the lateral strains dt and db become matched when subjected to the separation force;
- applying the determined amount of back pressure to the template, the substrate, or both while the template remains in contact with the formed patterned layer; and
- applying the separation force to separate the template from the formed patterned layer.
11. The method of claim 10 wherein the back pressure is applied prior to applying the separation force.
12. The method of claim 10 wherein the back pressure is applied concurrently with applying the separation force.
13. The method of claim 10 wherein the back pressure is only applied to the template.
14. The method of claim 10 wherein the back pressure is only applied to the substrate.
15. The method of claim 10 wherein the applied back pressure is positive pressure.
16. The method of claim 10 wherein the applied back pressure is negative pressure.
17. The method of claim 10 wherein positive back pressure is applied to the template and negative back pressure is applied to the substrate.
18. The method of claim 10 wherein negative back pressure is applied to the template and positive back pressure is applied to the substrate.
19. An imprint lithography method for separating an imprint lithography template from a patterned layer formed by contacting the imprint lithography template with a formable material deposited on a substrate and solidifying the formable material to form the patterned layer such that the template and the substrate have lateral strains dt and db associated therewith, respectively, when subsequently subjected to a separation force, the method comprising:
- determining the differences between lateral strains dt and db using an analytical model and/or finite element analysis;
- based on the determined differences between lateral strains dt and db, determining the amount of back pressure to apply to the template, the substrate, or both, such that the ratio of lateral strains (dt/db) is approximately 1 when subjected to the separation force;
- applying the determined amount of back pressure to the template, the substrate, or both while the template remains in contact with the formed patterned layer; and
- applying the separation force to separate the template from the formed patterned layer.
20. The method of claim 19 wherein the back pressure is applied prior to applying the separation force.
21. The method of claim 19 wherein the back pressure is applied concurrently with applying the separation force.
22. The method of claim 19 wherein the back pressure is only applied to the template.
23. The method of claim 19 wherein the back pressure is only applied to the substrate.
24. The method of claim 19 wherein the applied back pressure is positive pressure.
25. The method of claim 19 wherein the applied back pressure is negative pressure.
26. The method of claim 19 wherein positive back pressure is applied to the template and negative back pressure is applied to the substrate.
27. The method of claim 19 wherein negative back pressure is applied to the template and positive back pressure is applied to the substrate.
6873087 | March 29, 2005 | Choi et al. |
6909998 | June 21, 2005 | Hocheng et al. |
6932934 | August 23, 2005 | Choi et al. |
6936194 | August 30, 2005 | Watts |
7019819 | March 28, 2006 | Choi et al. |
7077992 | July 18, 2006 | Sreenivasan et al. |
7157036 | January 2, 2007 | Choi et al. |
7179396 | February 20, 2007 | Sreenivasan |
7396475 | July 8, 2008 | Sreenivasan |
7635263 | December 22, 2009 | Cherala et al. |
7635445 | December 22, 2009 | Choi et al. |
7636999 | December 29, 2009 | Choi et al. |
7701112 | April 20, 2010 | Choi et al. |
8087922 | January 3, 2012 | Zhang et al. |
8652393 | February 18, 2014 | Khusnatdinov et al. |
20040065252 | April 8, 2004 | Sreenivasan et al. |
20040065976 | April 8, 2004 | Sreenivasan et al. |
20050145119 | July 7, 2005 | Tan et al. |
20050187339 | August 25, 2005 | Xu et al. |
20060172553 | August 3, 2006 | Choi et al. |
20070126156 | June 7, 2007 | Mahadevan et al. |
20070141191 | June 21, 2007 | Kruijt-Stegeman et al. |
20070190200 | August 16, 2007 | Cherala et al. |
20100096776 | April 22, 2010 | Xu et al. |
20100102469 | April 29, 2010 | Khusnatdinov et al. |
20100110409 | May 6, 2010 | Choi et al. |
WO 2004/044651 | May 2004 | WO |
WO 2010/047837 | April 2010 | WO |
WO 2010/147671 | December 2010 | WO |
Type: Grant
Filed: Apr 27, 2011
Date of Patent: Mar 3, 2015
Patent Publication Number: 20110260361
Assignees: Canon Nanotechnologies, Inc. (Austin, TX), Molecular Imprints, Inc. (Austin, TX)
Inventors: Se-Hyuk Im (Austin, TX), Mahadevan GanapathiSubramanian (Cedar Park, TX), Edward Brian Fletcher (Austin, TX), Niyaz Khusnatdinov (Round Rock, TX), Gerard M. Schmid (Austin, TX), Mario Johannes Meissl (Austin, TX), Anshuman Cherala (Austin, TX), Frank Y. Xu (Round Rock, TX), Byung-Jin Choi (Austin, TX), Sidlgata V. Sreenivasan (Austin, TX)
Primary Examiner: Jeremiah Smith
Application Number: 13/095,514
International Classification: B29C 45/76 (20060101); G03F 7/00 (20060101); B82Y 10/00 (20110101); B82Y 40/00 (20110101);