Abstract: Particle beam system, comprising: a particle beam, source for generating a particle beam; an objective lens for focusing the particle beam onto an object plane, wherein the objective lens comprises a focal length and an optical axis; and a scintillator arrangement, which comprises an electron receiving surface facing the object plane and which is arranged such that it is exposed to electrons, which emanate from the object plane, wherein the scintillator arrangement further comprises a light exit face, wherein the scintillator arrangement is configured such that light rays which are generated by electrons, which are incident on the electron receiving surface leave the scintillator arrangement at the light exit face.

Abstract: A process of preparing a lamella from a substrate includes manufacturing a protection strip on an edge portion of the lamella to be prepared from the substrate, and preparing the lamella, wherein the manufacturing the protection strip includes a first phase of activating a surface area portion of the substrate, and a second phase of electron beam assisted deposition of the protective strip on the activated surface area portion from the gas phase.

Abstract: A process for manufacturing a TEM-lamella includes mounting (51) a plate shaped substrate having a thickness in a support, manufacturing (53) a first, strip-shaped recess on a first side of the substrate under a first angle to the support by means of a particle beam, and manufacturing (55) a second strip-shaped recess on a second side of the substrate under a second angle to the support by means of a particle beam, such that the first and the second strip-shaped recess mutually form an acute or right angle, and between them form an overlap region of lesser thickness. The lamella has a thicker rim region and a thinner central region, with a first strip-shaped, recess on a first side of the lamella and a second strip-shaped recess on a second side of the lamella, wherein the first and the second strip-shaped recess mutually form an acute or right angle, and between them form an overlap region having a thickness of below 100 nm.

Abstract: A method of inspecting an object using a scanning particle beam microscope, the method comprising: operating the microscope in a high-resolution mode by laterally scanning a particle beam of the high-resolution mode; operating the microscope in a 3D-mode for acquiring a three-dimensional representation of the object by laterally scanning a particle beam of the 3D-mode; wherein the particle beam of the high-resolution mode and the particle beam of the 3D-mode have a same beam energy and a same focus distance; and wherein an aperture angle of the particle beam of the 3D-mode is at least 2 times greater, or at least 5 times greater, or at least 10 times greater, or at least 100 times greater than an aperture angle of the particle beam of the high-resolution mode.

Abstract: A particle optical arrangement providing an electron microscopy system 3 and an ion beam processing system 7 comprises an objective lens 43 of the electron microscopy system having an annular electrode 59 being a component of the electron microscopy system arranged closest to a position 11 of an object to be examined. Between the annular electrode and a principal axis 9 of the ion beam processing system 7 a shielding electrode 81 is arranged.

Abstract: A method of processing of an object comprises scanning a particle beam across a surface of the object and detecting electrons emerging from the object due to the scanning; determining a height difference between the surface of the object and a predetermined surface for each of plural of locations on the surface of the object based on the detected electrons; determining a processing intensity for each of the plural locations on the surface of the object based on the determined height differences; and directing a particle beam to the plural locations based on the determined processing intensities, in order to remove material from or deposit material on the object at the plural locations.

Abstract: A particle beam device includes a particle beam generator, an objective lens, and first and second deflection systems for deflecting the particle beam in an object plane defined by the objective lens. In a first operating mode, the first deflection system generates a first deflection field and the second deflection system generates a second deflection field. In a second operating mode, the first deflection system generates a third deflection field and the second deflection system generates a fourth deflection field.

Abstract: A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

Abstract: An objective lens for focussing charged particles includes a magnetic lens and an electrostatic lens whose components are displaceable relative to each other. The bore of the outer pole piece of the magnetic lens exhibits a diameter Da which is larger than a diameter Di of the bore of the inner pole piece of the magnetic lens. The following relationship is satisfied: 1.5·Di?Da?3·Di. The lower end of the inner pole piece is disposed in a distance of at least 2 mm offset from the inner end of the outer pole piece in a direction of the optical axis.

Abstract: A method and an apparatus are for three-dimensional tomographic image generation in a scanning electron microscope system. At least two longitudinal marks are provided on the top surface of the sample which include an angle therebetween. In consecutive image recordings, the positions of these marks are determined and are used to quantify the slice thickness removed between consecutive image recordings.

Abstract: A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

Abstract: A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam.

Abstract: A representation of a particle beam image is generated by acquiring plural data sets using a particle beam apparatus. Each data set represents secondary particle intensities from a region of an object. The secondary particle intensities are acquired for the different data sets with different parameter adjustments of the particle beam apparatus. From the plural acquired data sets image data are generated using a tone-mapping method. The image data are represented at an output medium.

Abstract: A method for operating a particle beam microscope comprising detecting light rays or particles which emanate from a structure, wherein the structure comprises at least one of: at least a portion of a surface of an object and at least a portion of a surface of an object holder of the particle beam microscope; generating a surface model of the structure depending on the at least one of the detected light rays and the particles; determining a position and an orientation of the surface model of the structure relative to the object region; determining a measurement location relative to the surface model of the structure; and positioning the object depending on the generated surface model of the structure, depending on the determined position and orientation of the surface model of the structure, and depending on the determined measurement location.

Abstract: A charged particle beam column includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.

Abstract: A method for processing a digital gray value image includes the steps of: generating a binary edge image from the gray value image so that edges present in the gray value image are determined as line areas around the edges; applying a sharpness algorithm in the gray value image within regions which correspond to the line areas; and, carrying out a smoothing process in the gray value image within regions which lie outside of the line areas so that an additional smoothed, sharpened gray value image is generated.

Abstract: A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam.

Abstract: A charged particle beam system for performing precession diffraction includes a lens 11 for focusing a beam 5 in an object plane 9, and an objective lens 13 having a diffraction plane 27. A doublet 53 of lenses 35, 63 images the diffraction plane 27 into an intermediate diffraction plane 69 where a multipole 55 is located. A doublet 57 of lenses 65, 93 images the intermediate diffraction plane 69 into an intermediate diffraction plane 71 where a multipole 59 is located. A first deflection system 15 upstream of the object plane 9 can tilt to change an angle of incidence of the beam on the object plane. A second deflection system 37 between lenses 35 and 63 tilts the beam such that the change of the angle of incidence of the charged particle beam on the object plane is compensated.

Abstract: A particle beam system comprises a particle beam source 5 for generating a primary particle beam 13, an objective lens 19 for focusing the primary particle beam 13 in an object plane 23; a particle detector 17; and an X-ray detector 47 arranged between the objective lens and the object plane. The X-ray detector comprises plural semiconductor detectors, each having a detection surface 51 oriented towards the object plane. A membrane is disposed between the object plane and the detection surface of the semiconductor detector, wherein different semiconductor detectors have different membranes located in front, the different membranes differing with respect to a secondary electron transmittance.

Abstract: A charged particle beam system includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.