Abstract: A phase contrast electron microscope has an objective (8) with a back focal plane (10), a first diffraction lens (11), which images the back focal plane (10) of the objective (8) magnified into a diffraction intermediate image plane, a second diffraction lens (15) whose principal plane is mounted in the proximity of the diffraction intermediate image plane and a phase-shifting element (16) which is mounted in or in the proximity of the diffraction intermediate image plane. Also, a phase contrast electron microscope has an objective (8) having a back focal plane (10), a first diffraction lens (11), a first phase-shifting element and a second phase-shifting element which is mounted in or in the proximity of the diffraction intermediate image plane. The first diffraction lens (11) images the back focal plane of the objective magnified into a diffraction intermediate image plane and the first phase-shifting element is mounted in the back focal plane (10) of the objective (8).

Abstract: A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

Abstract: A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam.

Abstract: An objective lens for focussing charged particles includes a magnetic lens and an electrostatic lens whose components are displaceable relative to each other. The bore of the outer pole piece of the magnetic lens exhibits a diameter Da which is larger than a diameter Di of the bore of the inner pole piece of the magnetic lens. The following relationship is satisfied: 1.5·Di?Da?3·Di. The lower end of the inner pole piece is disposed in a distance of at least 2 mm offset from the inner end of the outer pole piece in a direction of the optical axis.

Abstract: A representation of a particle beam image is generated by acquiring plural data sets using a particle beam apparatus. Each data set represents secondary particle intensities from a region of an object. The secondary particle intensities are acquired for the different data sets with different parameter adjustments of the particle beam apparatus. From the plural acquired data sets image data are generated using a tone-mapping method. The image data are represented at an output medium.

Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract: A system and a method for processing and inspecting an object are provided, wherein the system comprises a particle beam column, an object holder and a gas supply apparatus. Thereby, the object holder is formed comprising a base, a first table displaceable relative to the base, a second table displaceable relative to the first table and a third table rotatable relative to the second table, wherein the cannula of the gas supply apparatus is fixed at the first table.

Abstract: A processing system comprises a gas supply apparatus with which process gas is supplied to an object. An activation beam activates the gas thereby inducing a chemical reaction between material at the surface of the object and the process gas causing ablation of material from the surface or deposition of material at the surface. The gas supply apparatus is formed from a stack of plates providing a gas conduit system between at least one gas inlet and at least one gas outlet.

Abstract: A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.

Abstract: A method and a device for determining the distance from the sample to be examined to at least one reference point which function independently of the type of sample. A signal is modulated to a first potential of a sample and a primary particle beam is directed at the sample, resulting in a secondary particle beam being formed by an interaction, the particles of this beam having the modulated signal. The particles of the secondary particle beam and the signal modulated to the potential of the particles of the secondary particle beam are detected. By comparing the detected modulated signal to a reference signal, the distance is determined from the relationship between the reference signal and the detected modulated signal. The device has the corresponding components for implementing the method.

Abstract: An instrument, in particular an electron microscope, has at least one user controllable operating parameter and at least one further operating parameter having a required value at least partially dependent on that of the user controllable parameter. A number of possible values of the further operating parameter are stored in a memory and each stored value corresponds to a respective possible value of the user controllable parameter. Selecting one of said stored possible values causes the instrument to be controlled accordingly. There is also provided a tuner for enabling the user to alter the selected value and updating apparatus for updating the memory accordingly, so that the adjusted value of the further operating parameter is subsequently selected from the memory if the same value of the user controllable parameter is then chosen again.

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: A detector for scanning electron microscopes, which can be used under different pressure conditions in the specimen chamber of the electron microscope, designed for the detection of both electrons and light. For this purpose, the detector has a photodetector and a scintillator of a material transmissive for visible light connected before the photodetector. The scintillator can be provided with a coating transparent to visible light. By the application of different potentials, the detector is suitable for the detection of electrons in high vacuum and for the detection of light with high pressures in the specimen chamber.

Abstract: A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: In a method for preparing a sample for electron microscopic examinations, in particular with a transmission electron microscope (TEM), a) a substrate containing the sample to be prepared on a sample locus is provided in a vacuum chamber, b) a protective layer is applied onto a surface of the sample locus, c) the sample located under the protective layer is separated from the substrate by an ion beam, the protective layer acting as a mask, and d) in the vacuum chamber, the separated sample is removed from the substrate.

Abstract: The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Abstract: The invention is directed to a corrector for correcting energy-dependent first-order aberrations of the first degree as well as third-order spherical aberrations of electron-optical lens systems. The corrector includes at least one quadrupole septuplet (S1) having seven quadrupoles (Q1 to Q7). The quadrupoles are mounted symmetrically to a center plane (ZS) so as to permit excitation along a linear axis. The corrector furthermore includes at least five octopoles (O1 to O7) which can be excited within the quadrupole septuplet. In an advantageous embodiment, two quadrupole septuplets are mounted in series one behind the other. The quadrupole fields of the two quadrupole septuplets are excited antisymmetrically to a center plane lying between the two quadrupole septuplets.

Abstract: A method and an apparatus are for three-dimensional tomographic image generation in a scanning electron microscope system. At least two longitudinal marks are provided on the top surface of the sample which include an angle therebetween. In consecutive image recordings, the positions of these marks are determined and are used to quantify the slice thickness removed between consecutive image recordings.

Abstract: With a detector system for the specimen chamber of a scanning electron microscope, signals are simultaneously detected in transmission which signals correspond to a light field contrast and a dark field contrast. The detector system (14) includes four detectors (15 to 18) in a plane (25) between which an aperture (19) for free access of electrons is located. Behind the aperture (19), a further detector (27) is arranged in a second plane (26). The detectors are preferably diodes. The detectors (15, 16, 17, 18) in the first plane (25), which is closer to the specimen, serve to generate signals which correspond to a dark field contrast. The further detector (27), more distant from the specimen, detects signals corresponding to a light field contrast. Large dead spaces, which are not sensitive to electrons, between the diodes and around the aperture (19), can be avoided by the offset arrangement of four diodes (15, 16, 17, 18) in the first plane (25).