Abstract: A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm?3 or more.

Abstract: An image processing device performs projection conversion that makes an image captured of an object to be recognized closer to a normal image captured from front of the object to be recognized based on a correlation between: a pre-specified plurality of feature ranges dispersed within a range of the object to be recognized; and a plurality of feature ranges designated based on the dispersion in the image.

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.

Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.

Abstract: This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm2 or less.

Abstract: A vibration energy harvester includes: a pair of electrodes provided so as to face opposite each other, with at least one of the pair of electrodes allowed to move; and an ion gel provided between the pair of electrodes, which is formed by using an ionic liquid, wherein: as an external vibration causes the electrode to move along a direction in which a distance between the pair of electrodes changes, power is generated through a change in an area of an electric double layer formed on two sides of an interface of each electrode and the ion gel.

Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

Abstract: A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

Abstract: A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a top portion of a metallic sealed container, a temperature at a bottom portion of a lid portion of a concrete-made storage container facing the top portion of the metallic sealed container, or a temperature of a member existing between the bottom portion of the lid portion and the top portion of the metallic sealed container. An inner temperature of the lid portion of the concrete-made storage container is also measured. Presence of leakage of inactive gas is estimated by comparing the temperatures.

Abstract: In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.

Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Abstract: A method to prevent stress corrosion cracking of a storage canister 1, wherein stress corrosion cracking is prevented by applying a compressive stress to a range where a tensile residual stress is generated on a metallic body 2 by welding a cover 4 to a top 2a of the body 2. A first compressive stress is applied beforehand to a range L of the body 2 where a tensile residual stress is expected to be generated by the welding of the cover 4, the tensile residual stress is canceled by welding the cover 4 with a compressive residual stress generated in the range L, and then a second compressive stress is applied so as to generate a compressive residual stress over the range L.

Abstract: The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an ?-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm?3 or higher, and having thickness of 50 ?m or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having ?-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.

Abstract: A method to prevent stress corrosion cracking of a storage canister 1, wherein stress corrosion cracking is prevented by applying a compressive stress to a range where a tensile residual stress is generated on a metallic body 2 by welding a cover 4 to a top 2a of the body 2. A first compressive stress is applied beforehand to a range L of the body 2 where a tensile residual stress is expected to be generated by the welding of the cover 4, the tensile residual stress is canceled by welding the cover 4 with a compressive residual stress generated in the range L, and then a second compressive stress is applied so as to generate a compressive residual stress over the range L.

Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Abstract: A slag monitoring device 100 for a coal gasifier includes a slag hole camera 11 that observes a slag hole 3 from which molten slag flows out, a water surface camera 12 that observes a situation in which the slag flowing out from the slag hole 3 falls onto a water surface 5H of cooling water 5, a falling sound sensor 13 that observes a sound of the slag falling onto the water surface 5H, and a processing device 20 that determines a solidification and adhesion position of the slag based on an opening area of the slag hole 3 observed by the slag hole camera 11 and falling lines and falling positions of the slag observed by the water surface camera.

Abstract: When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA? parallel to the first direction [11-20] toward second directions [?1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ?40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [?1-120] opposite to the first direction [11-20] and the second directions [?1100], [1-100], to discharge defects.

Abstract: A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.