Abstract: An object of the present invention is to provide organic solvent extracts of red algae laurencia sp., compounds isolated and identified therefrom, and an agent for preventing attachment of barnacles comprising them. The present invention relates to a barnacle attachment preventive agent consisting of at least one selected from the group consisting of Laurencin, Thyrsiferol, Magireol A, Omaezallene, Hachijojimallene A and organic solvent extracts of red algae laurencia sp.

Abstract: A treatment system for a watery material that includes: a dewatering tank in which liquefied matter of a material that is gaseous at a normal temperature and a normal pressure is contacted with the watery material and the watery material is separated into the resultant watery material and a liquid phase that contains an aqueous component from the watery material; an evaporator that vaporizes the material that is gaseous at a normal temperature and a normal pressure from the liquid phase; a separator that separates a gas of the material thus vaporized from effluent water; a condenser that condenses the gas into liquefied matter, two or more external heat sources selected from atmosphere, sewage, warm effluent water, and ground water; an external heat temperature detector that detects temperatures of external heats of the external heat sources; and an external heat supply destination controlling unit.

Abstract: An apparatus comprising at least vessel (2) for stocking conductive liquid (1) containing impurities; electromagnetic force generator (3) for generating electromagnetic force (F) capable of circulating the conductive liquid (1) in the conductive liquid (1); and discharging unit (4) for discharging nonmetallic impurities and deemed nonmetallic impurities (21a,21b) accumulated in low-pressure region (1a) by a pressure difference in conductive liquid (1) induced by the electromagnetic force (F), so that by the electromagnetic force (F), any nonmetallic impurities (21a) and deemed nonmetallic impurities (21b) are driven to the low-pressure region (1a), for example, liquid surface and separated.

Abstract: An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.

Abstract: Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

Abstract: An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.

Abstract: Disclosed is a power conversion device which achieves reductions in switching loss due to a reverse recovery current and heat generation loss. Specifically disclosed is a power conversion device provided with a cascode element configured by electrically connecting a normally-on switching element and a normally-off switching element in series and connecting a gate terminal of the normally-on switching element and a source terminal of the normally-off switching element via a cascode connection diode, and a high-speed diode electrically connected in parallel with the cascode element and having a cathode region connected to a positive electrode terminal and an anode region connected to a negative electrode terminal.

Abstract: In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage.

Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.

Abstract: A dense interconnector film is formed over a fuel electrode, while preventing calcium included in material for the interconnector from solid phase reaction with zirconia included in material for the fuel electrode. When forming the interconnector film 5 made of lanthanum chromite-based perovskite type oxide which includes calcium in its composition includes calcium to the fuel electrode 2 of which composition includes zirconia, a intermediate layer 6 is formed on the fuel electrode 2, by using (Sr0.9La0.1)(Ti0.9Nb0.1)O3, and then onto the intermediate layer 6, the interconnector film 5 is formed.

Abstract: Coal is reacted in a furnace 22 to obtain a coal gasification gas. The coal gasification gas is cooled by a gas cooler 23, passed through a porous filter 24, and desulfurized by a desulfurizer 25 to produce a CO-containing gas as an anode. The CO gas-containing gas is subjected to an exothermic reaction in a shift reactor 26 to form H2 and CO2, and the anode gas containing H2 is supplied to an anode 7 of MCFC 2. Thus, in the absence of an extra heat source and a heat exchange source, a desired anode gas is obtained from the coal gasification gas, and with heat buildup of the MCFC 2 being inhibited and its performance being maintained, reduction of CO2 is taken into consideration. A power generating plant equipped with the MCFC 2 capable of using a coal gasification fuel substantially containing a CO gas is thus achieved.

Abstract: The present invention provides a corrosion loss measuring apparatus which enables to quantitatively determine corrosion loss characteristics of ceramic materials and heat-resistant metallic materials, which is excellent in terms of safety, cost, and operation easiness, and whose size can be reduced. The invention also provides a method for measuring corrosion loss by use of the apparatus.

Abstract: A plurality of ultrasonic flaw detection methods can be switched and executed by a simple operation. An ultrasonic flaw detection apparatus includes a switching circuit 3 for permitting an angle probe 1 and a normal probe 2 to be arbitrarily switched to a transmission unit T and a reception unit R of a flaw detector. The switching circuit 3 can select an angle flaw detection mode for transmitting and receiving an ultrasonic beam only by the angle probe, an SPOD mode for transmitting the ultrasonic beam by the angle probe and receiving a diffracted wave by the normal probe and a flaw detection mode executed by a combination of angle flaw detection mode.

Abstract: A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.

Abstract: The measurement of a flaw height in a thick welded portion of a stainless steel specimen, which is difficult to perform by the TOFD method, can be conducted with more ease, with higher accuracy and in a shorter time than in the case of using tip echo techniques. In addition, it is possible to reduce variations in measurement results among individual inspectors. An ultrasonic wave 21 is launched by a transmitting probe 1 into a specimen 20 in a direction oblique to a flaw 24 to generate diffracted waves at the tip 25 of the flaw 24, then a diffracted wave 22 propagating upward directly from the flaw 24 and a diffracted wave 23 propagating upwardly of the flaw 24 after once reflected off the back 27 are received by a receiving probe 2 disposed above the flaw 24, and the height of the tip of the flaw 24 from the back 27 is measured from the propagation time difference between the received diffracted waves.

Abstract: A fuel assembly is charged in a reactor core of a nuclear reactor using a liquid metal as a coolant, and includes a wrapper tube storing a plurality of fuel pins and including an entrance nozzle for introducing the coolant and an operation handling head, grids disposed in the wrapper tube to support the fuel pins in the radial direction of the wrapper tube, liner tubes inserted in the wrapper tube to fixedly hold the respective grids in the axial direction of the wrapper tube, and a fixing device for fixing the grids and the liner tubes in the radial direction of the wrapper tube.

Abstract: A fuel assembly is charged in a reactor core of a nuclear reactor using a liquid metal as a coolant, and includes a wrapper tube storing a plurality of fuel pins and including an entrance nozzle for introducing the coolant and an operation handling head, grids disposed in the wrapper tube to support the fuel pins in the radial direction of the wrapper tube, liner tubes inserted in the wrapper tube to fixedly hold the respective grids in the axial direction of the wrapper tube, and a fixing device for fixing the grids and the liner tubes in the radial direction of the wrapper tube.

Abstract: A working fluid consisting essentially of CO2, a molecule having a low ratio of specific heats, is expanded by a gas turbine 4. Thus, even if the pressure changes between the inlet side and the outlet side of the gas turbine 4, a temperature drop as a temperature change is suppressed, so that an exhaust gas having a high temperature is obtained. Consequently, the difference between the temperature of the working fluid on the outlet side of a compressor 2 and the temperature of the exhaust gas on the outlet side of the gas turbine 4 is kept so great that a regeneration effect is enhanced, whereby thermal efficiency is increased without a decrease in the output.

Abstract: An electromagnetic stirring apparatus includes a vessel (2) for containing an electroconductive material in a molten state, such as a molten metal (1); an axially traveling magnetic field generating coil (3) for generating magnetic line of force (15) in an axial direction of the vessel (2) towards the molten metal (1) contained in the vessel (2) from an outside of the vessel (2); and a strip-shaped magnetic plate (4) disposed between the coil (3) and the vessel (2). Portions (11) where an axial electromagnetic force is generated in the molten metal contained in the vessel by the coil (3), and portions (10) into which a magnetic field is prevented by the magnetic plate (4) from locally entering, are formed in the vessel (2), whereby a circumferential pressure gradient is generated.

Abstract: With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle ? of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 ?m/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.