Abstract: A chip package structure is provided. The chip package structure includes a chip, at least one inducting coil, a molding compound and a redistribution circuit layer. The chip includes an active surface, a back surface opposite to the active surface. The inducting coil is disposed around a periphery region of the chip. The molding compound covers the chip and the periphery region and exposes the active surface. The inducting coil is disposed at the molding compound. The redistribution circuit layer covers the active surface, part of the molding compound and part of the inducting coil, and electrically connects the chip.

Abstract: A chip package structure includes a lead frame having first and second patterned metal layers and an insulation layer, a chip, and an encapsulant covering the first patterned metal layer and the chip. The first patterned metal layer includes a chip pad with first recesses and bonding pads in the first recesses. A first groove exists between each bonding pad and the chip pad. The second patterned metal layer connecting the first patterned metal layer includes terminal pads and a heat dissipation block thermally coupled to the chip pad. The heat dissipation block includes second recesses where the terminal pads are located and electrically connected to the corresponding bonding pads. A second groove exists between each terminal pad and the heat dissipation block. The insulation layer is located between the bonding pads and the terminal pads. The chip on the chip pad is electrically connected to the bonding pads.

Abstract: A quad flat no-lead package includes an encapsulant, and a plurality of chip pads, a plurality of bond pads and a chip disposed in the encapsulant. Each chip pad is connected to at least one of the chip pads adjacent thereto by a first extending portion. The chip pads and the bond pads are arranged in an array. The chip pads are disposed at the center of the array and the bond pads are disposed around the chip pads. Each of the bond pads and at least one of the bond pads or one of the chip pads adjacent thereto each has a second extending portion formed therebetween and corresponding to each other. Every two of the second extending portions corresponding to each other are separated by a groove. The chip is mounted on a top surface of the chip pads and is electrically coupled to the bond pads.

Abstract: A flat no-lead package includes an encapsulating material, and a die pad, a chip, a plurality of first contact pads and a plurality of second contact pads disposed in the encapsulating material. The encapsulating material has a package bottom surface. The die pad has a plurality of die pad extensions extending from the edges thereof. The chip is mounted on the die pad. The first contact pads are disposed near the edges of the encapsulating material and electrically coupled to the chip. The second contact pads are located between the die pad and the first contact pads and electrically coupled to the chip. Each of the second contact pads have a second contact pad extension corresponding to one of the die pad extensions respectively. The bottom surfaces of the first contact pads, the second contact pads and the second contact pad extensions are exposed on the package bottom surface.

Abstract: A chip package structure is provided. The chip package structure includes a chip, at least one inducting coil, a molding compound and a redistribution circuit layer. The chip includes an active surface, a back surface opposite to the active surface. The inducting coil is disposed around a periphery region of the chip. The molding compound covers the chip and the periphery region and exposes the active surface. The inducting coil is disposed at the molding compound. The redistribution circuit layer covers the active surface, part of the molding compound and part of the inducting coil, and electrically connects the chip.

Abstract: A manufacturing method of semiconductor package structure includes: providing a first dielectric layer having multiple through holes; providing a second dielectric layer having multiple conductive vias and a chip-containing opening; laminating the second dielectric layer onto the first dielectric layer; disposing a chip in the chip-containing opening and adhering a rear surface of the chip onto the first dielectric layer exposed by the chip-containing opening; forming a redistribution circuit layer on the second dielectric layer wherein a part of the redistribution circuit layer extends from the second dielectric layer onto an active surface of the chip and the conductive vias so that the chip electrically connects the conductive vias through the partial redistribution circuit layer; forming multiple solder balls on the first dielectric layer wherein the solder balls are in the through holes and electrically connect the chip through the conductive vias and the redistribution circuit layer.

Abstract: A chip package structure including a leadframe, a chip, at least one heat dissipation pillar, and a molding compound is provided. The leadframe includes a die pad and a plurality of leads. The die pad has at least one through hole. The leads surround the die pad. The chip is located on the die pad and electronically connected to the leads. The chip includes an active surface and a back surface opposite to the active surface. The back surface of the chip is adhered to the die pad. The heat dissipation pillar is located on the back surface and passes through the through hole. The molding compound encapsulates the chip, at least parts of the leads, and the die pad. The molding compound includes at least one opening to expose the heat dissipation pillar. A manufacturing method of the chip package structure is also provided.

Abstract: A method of manufacturing a semiconductor package structure is provided. A supporting plate and multiple padding patterns on an upper surface of the supporting plate define a containing cavity. Multiple leads electrically insulated from one another are formed on the padding patterns, extend from top surfaces of the padding patterns along side surfaces to the upper surface and are located inside the containing cavity. A chip is mounted inside the containing cavity, electrically connected to the leads. A molding compound is formed to encapsulate at least the chip, a portion of the leads and a portion of the supporting plate, fill the containing cavity and gaps among the padding patterns, and exposes a portion of the leads on the top surface. The supporting plate is removed to expose a back surface of each padding pattern, a bottom surface of the molding compound and a lower surface of each lead.

Abstract: A chip structure and a multi-chip stack package are provided. The chip structure includes a chip, at least one interlink plate and a plurality of first connection terminals. The chip has an active surface, a back surface opposite to the active surface and a plurality of side surfaces respectively connected to the active surface and the back surface. The chip includes at least one bond pad disposed on the active surface and at least one joint pad disposed on the back surface. The interlink plate substantially parallel to one of the side surfaces includes a base and a conductive pattern disposed on the base. The conductive pattern is located between the base and the chip. The first connection terminals are disposed between the chip and the interlink plate. The bond pad is electrically connected to the joint pad through the first connection terminals and the conductive pattern.

Abstract: A chip package structure and a manufacturing method thereof are provided. The chip package structure includes a substrate, a chip, a plurality of wires, a film layer, a carrier, and an encapsulant. The substrate has an upper surface and a lower surface. The chip is mounted on the upper surface of the substrate. The wires are electrically connected to the chip and the substrate respectively. The film layer is attached to the substrate and entirely encapsulates the chip and the wires. The carrier is adhered on the film layer. The encapsulant is disposed on the upper surface of the substrate, wherein the encapsulant has an electro-magnetic shielding filler. The encapsulant at least partially encapsulates the carrier and the film layer, and the encapsulant covers the chip and the wires.

Abstract: The present invention provides a Quad Flat Non-leaded (QFN) package, which comprises a chip, a lead frame, a plurality of composite bumps and an encapsulant. The chip has a plurality of pads, and the lead frame has a plurality of leads. Each of the plurality of composite bumps has a first conductive layer and a second conductive layer. The first conductive layer is electrically connected between one of the pads and the second conductive layer, and the second conductive layer is electrically connected between the first conductive layer and one of the leads. The encapsulant encapsulates the chip, the leads and the composite bumps. Thereby, a QFN package with composite bumps and a semi-cured encapsulant is forming between the spaces of leads of lead frame before chip bonded to the lead frame are provided.

Abstract: A method for manufacturing a chip package structure includes following steps. A carrier having a metal layer is provided. A patterned photoresist layer is formed on the metal layer. The patterned photoresist layer has a plurality of first openings exposing a portion of the metal layer. Connection terminals are formed in the first openings, respectively, and the connection terminals are connected to the metal layer. A chip is placed on the carrier, and first pads of the chip are respectively connected to the connection terminals through a plurality of connection conductors. After the chip is placed on the carrier, the patterned photoresist layer is removed. A encapsulant is formed on the carrier. The encapsulant encapsulates the chip, the connection conductors, and the metal layer. The carrier and the metal layer are removed to expose the connection terminals.

Abstract: A method for manufacturing a chip package structure includes following steps. A carrier having a metal layer is provided. A patterned photoresist layer is formed on the metal layer. The patterned photoresist layer has a plurality of first openings exposing a portion of the metal layer. Connection terminals are formed in the first openings, respectively, and the connection terminals are connected to the metal layer. A chip is placed on the carrier, and first pads of the chip are respectively connected to the connection terminals through a plurality of connection conductors. After the chip is placed on the carrier, the patterned photoresist layer is removed. A encapsulant is formed on the carrier. The encapsulant encapsulates the chip, the connection conductors, and the metal layer. The carrier and the metal layer are removed to expose the connection terminals.

Abstract: A chip package structure including a leadframe, a chip, bonding wires and an encapsulant is provided. The leadframe includes a die pad, leads and an insulating layer. The die pad includes a chip mounting portion and a periphery portion. At the periphery portion, the die pad has a second upper surface lying between a first upper surface and a lower surface of the die pad. Each lead includes a suspending portion and a terminal portion. The suspending portion connects to the terminal portion and extends from the terminal portion towards the die pad. The insulating layer is disposed on the second upper surface of the periphery portion and connects the suspending portions to the die pad. The chip is disposed on the chip mounting portion. The bonding wires electrically connect the chip to the suspending portions. The encapsulant covers the chip, the bonding wires, the insulating layer, and the leadframe.

Abstract: A chip structure and a multi-chip stack package are provided. The chip structure includes a chip, at least one interlink plate and a plurality of first connection terminals. The chip has an active surface, a back surface opposite to the active surface and a plurality of side surfaces respectively connected to the active surface and the back surface. The chip includes at least one bond pad disposed on the active surface and at least one joint pad disposed on the back surface. The interlink plate substantially parallel to one of the side surfaces includes a base and a conductive pattern disposed on the base. The conductive pattern is located between the base and the chip. The first connection terminals are disposed between the chip and the interlink plate. The bond pad is electrically connected to the joint pad through the first connection terminals and the conductive pattern.

Abstract: A chip package structure includes a flexible substrate having a chip mounting region, a plurality of leads disposed on the flexible substrate, an insulating layer and a chip. Each lead includes a body portion and an inner lead portion connected to each other. The body portion is located outside the chip mounting region and has a thickness greater than that of the inner lead portion. The insulating layer is disposed on the inner lead portions. The chip has an active surface on which a plurality of bumps and a seal ring adjacent to the chip edges are disposed. The chip is mounted within the chip mounting region and electrically connects the flexible substrate by connecting the inner lead portions of the leads with the bumps. The insulating layer is corresponding to the seal ring in position when the chip is electrically connected to the flexible substrate.

Abstract: A manufacturing method of a bump structure is provided. A substrate having at least one pad and a passivation layer is provided. The passivation layer has at least one first opening exposing the pad. An insulating layer is formed on the passivation layer. The insulating layer has at least one second opening located above the first opening. A metal layer is formed on the insulating layer. The metal layer electrically connects the pad through the first and second openings. A first bump is formed in the first and second openings. A second bump is formed on the first bump and a portion of the metal layer. The metal layer not covered by the second bump is partially removed by using the second bump as a mask, so as to form at least one UBM layer. The first bump is completely covered by the UBM layer and the second bump.

Abstract: A method of manufacturing a semiconductor package structure is provided. A heat-conductive block is adhered to a portion of a second surface of a conductive substrate via a first adhesive layer. An opening is formed by performing a half-etching process on a first surface of the conductive substrate. The remaining conductive substrate is patterned to form leads and expose a portion of the heat-conductive block. Each lead has a first portion and a second portion. A thickness of the first portion is greater than a thickness of the second portion. A first lower surface of the first portion and a second lower surface of the second portion are coplanar. A chip is disposed on the exposed portion of the heat-conductive block and electrically connected to the second portions of the leads. A first bottom surface of the heat-conductive block and a second bottom surface of a molding compound are coplanar.

Abstract: A chip packaging substrate includes a flexible substrate, a plurality of test pads, and a plurality of leads, wherein the flexible substrate has a first surface and a second surface, and the first surface has a user area and a test pad area configured thereon. The test pads are arranged in at least three rows within the test pad area. The lead connected to the test pad in the middle row includes a first section extending from the chip to the test pad area and a second section disposed on the second surface, wherein one end of the second section penetrates the flexible substrate to connect with the first section and the other end penetrates the flexible substrate to connect with the test pad, so as to increase the dimensions of the test pads.

Abstract: A semiconductor package with improved height uniformity of solder cap bumps therein is disclosed. In one embodiment, the semiconductor package includes a semiconductor substrate comprising a plurality of pads spacedly disposed on a top surface of the substrate, and a passivation layer formed on top of the pads, wherein a plurality of pad openings are created to expose at least a portion of the pads; a plurality of solder cap bumps formed at the pad openings of the passivation layer; and a carrier substrate having a plurality of bond pads electrically connected to the solder caps of the solder cap bumps on the semiconductor substrate. The solder cap bump includes a solder cap on top of a conductive pillar, and a patternable layer can be coated and patterned on a top surface of the conductive pillar to define an area for the solder ball to be deposited. The deposited solder ball can be reflowed to form the solder cap.